50 OHM 20 DB Search Results

magnum microwave

Contextual Info: 4ÔE T> fi AG NU n MICROWAVE CORP S75273D 0 0 00 1 5 3 b • HNC HV87T-1 VCO 2 .0 VOLTAGE CONTROLLED OSCILLATOR HYPERA3RJPT VARACTOR INTEGRAL BUFFER AMPLIFIER to 4 .0 ELECTRICAL S P E C IFIC A TIO N S :^ • ' +20- Frequency 2.0 to 4.0 GHz Power Output at 25*C 50 ohm load

Contextual Info: TDK RF Products for Wireless LAN 02/01/05 for 2.4GHz Multilayer BalBPF Start Freq. Stop Freq. Ins. Loss MHz MHz dB MAX 2400 2500 2.4 2400 2500 1.7 2400 2500 1.5 2400 2500 3.0 2400 2500 3.3 Sample Available New Lineup Under Developing Bal.imped. ohm 50 50

Contextual Info: FH1 High Dynamic Range FET Product Features • • • • • • • 50 – 4000 MHz Low Noise Figure 18 dB Gain +42 dBm OIP3 +21 dBm P1dB Single or Dual Supply Operation Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF > 100 years Applications •

FH1G

Abstract: JESD22-A114 sot-89 marking code 5A b987
Contextual Info: FH1 The Communications Edge TM Product Information High Dynamic Range FET Product Features x x x x x x x 50 – 3000 MHz Low Noise Figure 18 dB Gain +42 dBm OIP3 +21 dBm P1dB Single or Dual Supply Operation Lead-free/Green/RoHS-compliant SOT-89 Package x MTTF > 100 years

6W toroid TRANSFORMER

Abstract: SD2921-10 uhf 150w mosfet SD2921 pin configuration 20k ohm potentiometer SC1318
Contextual Info: SD2921-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB gain @175 MHz THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

FP11G

Abstract: FP1189-G
Contextual Info: FP1189 ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years The FP1189 is a high performance ½-Watt HFET

resistor 680 ohm

Abstract: Power Transformer EE-19 SD2931-10 EE-19 transformer SD2931 VK200 rf transformer 50 ohm to 0.1 ohm SCHEMATIC POWER SUPPLY WITH mosfet
Contextual Info: SD2931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES

TRANSISTOR C 6090 lg

Abstract: TRANSISTOR C 6090 TC1101 8484 au
Contextual Info: TRANSCOM TC1101 January 2002 Low Noise and Medium Power GaAs FETs FEATURES • Low Noise Figure: PHOTO ENLARGEMENT NF = 0.5 dB Typical at 12 GHz • High Associated Gain: Ga = 12 dB Typical at 12 GHz • High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz

B 081 d

Abstract: CM624
Contextual Info: Surface Mount HELA-10+ HELA-10 High IP3 Monolithic Amplifier Broadband, 50 & 75 ohms, 5 to 1000 MHz Features • excellent flatness, ±0.4 dB typ. • very high IP3, 49 dBm typ. at 150 MHz & 45 dBm typ. at 800 MHz • very high IP2, 88 dBm typ. • low noise figure, 3.5 dB typ.

ofdm amplifier

Abstract: CHV2707-QJ CHV2707-QJ-0G00 CHV2707-QJ-0G0T PB-CHV2707-0000 RO4003 QFN 64 PACKAGE rth ofdm signal
Contextual Info: 700 to 800 MHz InGaP HBT 5W Linear Power Amplifier CHV2707-QJ October 2006 - Rev 25-Oct-06 Features Internal Pre-matching Single Supply Operation, 12V Power Gain 14 dB ESD Protection On Board Current Control for Multiple Applications 2.5% EVM @ 30 dBm Avg Power, 802.16 OFDM

MWA 120

Abstract: MWA120 CZ8120
Contextual Info: RF AMPLIFIER MODEL CZ8120 Available as: Features Typical Intermodulation Performance at 25 ºC  Replacement for the Motorola MWA 120  Operating Temp. -55 ºC to +125 ºC  Environmental Screening Available Second Order Harmonic Intercept Point . +31 dBm Typ.

Contextual Info: TQP3M6005 Mid Band Dual LNA 1700-2000 MHz Applications •  Base Station receivers Tower-mounted amplifiers 16-pin 4x4mm leadless SMT package Product Features       Functional Block Diagram 0.36 dB Noise Figure (single channel) 1700-2000 MHz

TA 8659

Abstract: ta 8659 an TC1102 8913 ta 8659 anG TC110-2 super Low Noise Gaas S11012
Contextual Info: TRANSCOM TC1102 January 2002 Super Low Noise GaAs FETs FEATURES • • • • • PHOTO ENLARGEMENT Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 13 dB Typical at 12 GHz Lg = 0.25 µm, Wg = 160 µm All-Gold Metallization for High Reliability

Contextual Info: MMIC AP112 Product Features • • • • • • • • • • • • Application SOT89 Type Package High IP3, High Gain No matching circuit needed 3MHz-2.5GHz -73 dBc CTB, 135Channels, +30dBmV/ch, Single -57 dBc CSO, 135Channels, +30dBmV/ch, Single

Contextual Info: MMIC AP112 Product Features • • • • • • • • • • • • Application SOT89 Type Package High IP3, High Gain No matching circuit needed 3MHz-2.5GHz -73 dBc CTB, 135Channels, +30dBmV/ch, Single -57 dBc CSO, 135Channels, +30dBmV/ch, Single

H580

Abstract: HMC580ST89E HMC580ST89
Contextual Info: HMC580ST89 / 580ST89E v00.1106 AMPLIFIERS - SMT 5 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 1.0 GHz Typical Applications Features The HMC580ST89 / HMC580ST89E is an ideal RF/IF gain block & LO or PA driver: P1dB Output Power: +22 dBm • Cellular / PCS / 3G

Contextual Info: DBS SDC-14550 SERIES l i e DATA DEVICE _ _ CORPORATION_ PROGRAMMABLE SYNCHRO/RESOLVER-TO-DIGITAL CONVERTERS PRELIMINARY DESCRIPTION The SDC-14550 Series are small, lowcost hybrid Synchro- or Resolver-toD ig ita l c o n v e r te r s b a se d on a single-chip monolithic. The completely

CHV2710-QJ

Abstract: CHV2710-QJ-0G00 CHV2710-QJ-0G0T PB-CHV2710-0000 RO4003
Contextual Info: 2.5 GHz InGaP HBT 5W Linear Power Amplifier CHV2710-QJ October 2006 - Rev 23-Oct-06 Features Internal Pre-matching Single Supply operation, 12V Power Gain 9 dB ESD Protection on board Current Control for multiple applications 2.5% EVM @ 29 dBm avg power, 802.16 OFDM

AN1032

Abstract: NES1823P-70
Contextual Info: PRELIMINARY DATA SHEET 70W L-S BAND TWIN POWER GaAs MESFET FEATURES NES1823P-70 OUTLINE DIMENSIONS Units in mm • • HIGH OUTPUT POWER: 70 W TYP HIGH POWER ADDED EFFICIENCY: 40 % TYP • HIGH LINEAR GAIN: 11 dB TYP at 2.2 GHz PACKAGE OUTLINE T-86 45°

Contextual Info: CMH0819 ? High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports ? Integrated bypass switch for LNAs CDMA ? GaAs PHEMT Process ? Leadless 3.5 x 4.5 mm. SMT package LNA ? LO Input power range: -7.0 to 0 dBm IF OUT ? Operating voltage range: 2.7 to 4 V

VFTCMS

Contextual Info: VFTCM O C X O VFTCM Series OCXO Product Data Sheet F E AT U R E S SC-Cut Crystal Through Hole VFTCM or SMD (VFTCMS) • High Stability (up to ±5x10–9) • Low Aging (5x10–10/day, 5x10–8/year) • Low Phase Noise (–160 dBc/Hz, TYP, floor) • Sine Wave or HCMOS/TTL Output

HMC338

Contextual Info: HMC338 v00.0301 MICROWAVE CORPORATION GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 26 - 33 GHz Typical Applications Features 26 and 33 GHz Microwave Radios Integrated LO Amplifier: -5 dBm Input Up and Down Converter for Point to Point Radios Sub-Harmonically Pumped x2 LO

PB-CMM6004-AH-00A0

Abstract: CMM6004-AH CMM6004-AH-0000 CMM6004-AH-000T
Contextual Info: 0.25-6.0 GHz High Dynamic Range Amplifier CMM6004-AH February 2007 - Rev 10-Feb-07 Features Functional Block Diagram 0.25 to 6.0 GHz Frequency Range +41 dBm Output IP3 1.7 dB Noise Figure 15 dB Gain +23 dBm P1dB LGA Package Single Power Supply Single Input Matching

Contextual Info: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies 2 - 1 7 5 MHz 30 WATTS 50 VOLTS 15 dB MIN. AT 175 MHz