50 AMP 300 VOLT DIODE Search Results

SML50EUZ03B

Contextual Info: SML50EUZ03B Enhanced Ultrafast Recovery Diode 300 Volt, 50 Amp Back of Case TECHNOLOGY Cathode SML The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

SML50EUZ03S

Abstract: freewheeling diode 50A
Contextual Info: SML50EUZ03S SEME LAB 3 D PAK Package Enhanced Ultrafast Recovery Diode 300 Volt, 50 Amp TECHNOLOGY Back of Case Cathode The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising SML SML 10SUZ12D 50EUZ03S

Contextual Info: SML50SUZ03B SEME LAB TO-247 Package Back of Case Cathode Ultrafast Recovery Diode 300 Volt, 50 Amp TECHNOLOGY The planar passivated and standard ultrafast recovery SML 50SUZ03B diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

SML50SUZ03LC

Abstract: freewheeling diode 50A
Contextual Info: SML50SUZ03LC SEME LAB Ultrafast Recovery Diode 300 Volt, 2 x 50 Amp TO-264 Package Back of Case Cathode SML 50SUZ03LC TECHNOLOGY The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

SML50EUZ03B

Contextual Info: SML50EUZ03B SEME LAB TO-247 Package Back of Case Cathode Enhanced Ultrafast Recovery Diode 300 Volt, 50 Amp TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 50EUZ03B diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

h48 diode

Abstract: H100 SML50EUZ03JD diode H48 48 VOLT 10 AMP smps diode L
Contextual Info: SML50EUZ03JD SEME LAB SOT-227 Package 1- Cathode 2 Enhanced Ultrafast Recovery Diode 300 Volt, 2 x 50 Amp 2- Anode 2 TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 5 0 E U Z 0 3 JD diode features a triple charge control action utilising

SML50SUZ03S

Contextual Info: SML50SUZ03S SEME LAB 3 D PAK Package Ultrafast Recovery Diode 300 Volt, 50 Amp TECHNOLOGY Back of Case Cathode The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising SML SML 10SUZ12D 50SUZ03S Semelab’s Graded Buffer Zone technology combined with

SML50EUZ03LC

Contextual Info: SML50EUZ03LC SEME LAB TO-264 Package Back of Case Cathode SML 50EUZ03LC Enhanced Ultrafast Recovery Diode 300 Volt, 2 x 50 Amp TECHNOLOGY The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

freewheeling diode 50A

Abstract: diode H48 H100 SML50SUZ03JD
Contextual Info: SML50SUZ03JD SEME LAB Ultrafast Recovery Diode 300 Volt, 2 x 50 Amp SOT-227 Package 1- Cathode 2 2- Anode 2 TECHNOLOGY The planar passivated and standard ultrafast recovery SML 5 0 S U Z 0 3 JD diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

TRS-4405S

Abstract: MD14 TRS-3605S TRS-4015S TRS-4805S TRS-5205S TRS-5405S IMD14 480 to-5
Contextual Info: 386972a GENERAL DIODE CDRP_ 07C 00252 D T-33-o GENERAL DIODE CORP ~ 0? D E | 3 f i b T ? S D 0 D Q 0 E S a 4 | SILICON NPN-Power Transistors TYPE NO. MAX. THERMAL RES. Junction to C u e * * re/ *) TRS-3M5S 17.5 MAX. ABSOLUTE MAX. RATINGS £ 2 5 ' C.

MD14

Abstract: TRM6014 TRM6505 TRL2005 TRM5014S TRM5504 TRM6504 TRM7014 TRM8014 TRW201
Contextual Info: 3869720 GENERAL DIODE CORP '_ 07C 0 0 2 5 3_ D GENERAL DIODE CORP 07 DE |3ÛL.ci720 0000E53 b SILICON N P N -P o w e r Transistors TYPE NO. MAX. THERMAL RES. Junction lo Case 9,« MAX. COLL. DISS. in Fiee All 0 2 5 'C Pe ABSOLUTE MAX. RATINGS $ 2 5 'C.

rectifier diode 20 amp 800 volt

Abstract: 80 Amp current 100 volt diode 50 Amp 300 volt diode alternator diode 65 amp alternator diode RZ3524C rectifier diode pressfit zener alternator rectifier 400 amp 20 volt rectifier RZ2524C
Contextual Info: RZ2524C/A - 25 Amp RZ3524C/A - 35 Amp RZ5024C/A - 50 Amp Rectifier/Zener Automotive Alternator Diode Data Sheet Anode Base Suffix "A" Cathode Base Suffix "C" Features * Epi Layer for tight control of parameters * Silicon oxide passivation for superior junction protection

Contextual Info: _ 3B69720 GENERAL DIODE CORP _ 07C00256 D -r . y t GENERAL DIODE CORP □? D E ^ 3 0 ^ 7 2 0 000055b 1 | SILICON PNP - Power Transistors TYPE MO. MAX. COLL. H MAX. EHSS. A THERMAL X. M RES. Fim iM Ctm i T A» te C m #25* C E M rtyw

rectifier diode 20 amp 800 volt

Abstract: 3528 MR2528 MRL2528 MR3528 MR5028 MRL3528 50 Amp 300 volt diode MR502-8
Contextual Info: MR2528/MRL2528 - 25 Amp MR3528/MRL3528 - 35 Amp MR5028/MRL5028 - 50 Amp Rectifier/Zener Automotive Alternator Diode Data Sheet Coloured ring denotes cathode Features * Epi Layer for tight control of parameters * Silicon oxide passivation for superior junction protection

alternator rectifier

Abstract: 100 Amp current 800 volt diode SCD0861-1 RZ2538A RZ2538C RZ3538A RZ3538C RZ5038A RZ5038C
Contextual Info: RZ2538C/A - 25 Amp RZ3538C/A - 35 Amp RZ5038C/A - 50 Amp Rectifier/Zener Automotive Alternator Diode Data Sheet Anode Base Suffix "A" Cathode Base Suffix "C" Features * Epi Layer for tight control of parameters * Silicon oxide passivation for superior junction protection

TRS601

Contextual Info: 3869720 GENERAL DIODE CORF ¿3 GTS C 07C 00250 D 7- 33 -^/ _ mLaondacto%± GENERAL DIODE CORP ~ 07 DE | 3öb17aD DDDOaSD 0 100 Ea m e s Stre e t < 6 1 7 J Ï7 2 -7 5 2 0 F r a m in g h a m , M a ss a c h u se t ts 0 1 7 0 1 SILICON NPN - Power Transistors

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability at 125°C Ultra Low Thermal Resistance

use igbt for 3 phase induction motor

Abstract: 3 phase brushless 400v
Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance

2N3743

Abstract: 2N4930 2N4931 2N5096 2N5282
Contextual Info: 3869720 G EN ER A L ' O I D D E CORP 07C 0 02 54 GENERAL DIODE CORP 07 D -p-33 - DE | 301^750 DDODSSM Ö | ~ SILICON N P N - Power Transistors rvP E i, M AX . TH ER M AL ;s Junction lo Cáse M AX. C O LL. DI SS. t< net A li 925* C A B S O L U T E M A X . R A T IN G S { » ' C .

MSK4357

Abstract: 1000 Amp current diode
Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance Integral Free Wheeling Fast Recovery Epitaxial Diode (FRED)

10 amp igbt 1000 volt

Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance

IGBT 50 amp 1000 volt

Abstract: Cree SiC MOSFET 12 VOLT 150 AMP smps circuit 24 volt 10 amp smps 10 amp igbt 1000 volt 12 VOLT 2 AMP smps circuit IGBT 50 amp 1200 volt Calculation of major IGBT operating parameters CPWR-AN03 IGBT JUNCTION TEMPERATURE CALCULATION
Contextual Info: APPLICATION NOTE Hard Switched Silicon IGBT’s? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes By Jim Richmond Replacing the Si Ultrafast soft recovery diode used as the freewheeling component in hard switched IGBT applications with a Silicon Carbide SiC Schottky diode

transistor c1417

Abstract: TH-C1720-F6 THOMSON ELECTRONIQUES TUBES c1417 Thomson-CSF semiconductor c1417 transistor TH-C1720 Thomson-CSF power laser diode price list C5520 c5530
Contextual Info: Welcome to Thomson-CSF Laser Diodes' site Welcome to the Web site of THOMSON-CSF Laser Diodes TLD your partner in Optoelectronic. TLD offers a large variety of High Power Laser Diodes (795 - 980nm), specific optoelectronic functions, and laser diode components