50 A DIODE 600V Search Results

plasma cutting

Abstract: DC chopper Fast Recovery Rectifier, 300V M5 12t
Contextual Info: SanRex ISOLATED DIODE MODULE SOFT RECOVERY DIODE _ DSR 200B A 50/60 V rrm=500/600V , Ifav=200A , trr=240ns, Softness=0.8 S anR ex Soft Recovery Diode Module DSR200BA is designed for applications requiring fast switching and soft recovery

Condor

Abstract: M50D E72445 M50100TB1200
Contextual Info: Series M 50 Diode 60-100 A m p * DIODE Modules • High Surge Current Rectifier Circuits • Up to 1600 Volt Blocking Standard c a v a dm Control over power Sngle- and three-phase diode circuits incorporate highly efficient thermal management to provide high surge

AN-7528

Abstract: 50us60s TA49468 mosfet 600V 50A 25A10 an7528
Contextual Info: tm FFH50US60S Features 50A, 600V, Stealth Diode • Stealth Recovery, Trr = 113 ns @ IF = 50 A The FFH50US60S is a Stealth™ diode optimized for low loss performance in output rectification. The Stealth™ family exhibits low reverse recovery current (IRM(REC), low VF and soft

Contextual Info: Preliminary Datasheet RJU60C6WDPK-M0 600V - 50A - Dual Diode Super Fast Recovery Diode R07DS0875EJ0100 Rev.1.00 Sep 03, 2012 Features • Fast reverse recovery time: trr = 100 ns typ. at IF = 30 A, di/dt = 100 A/s Per Leg  Low forward voltage: VF = 1.4 V typ. (at IF = 50 A) Per Leg

rju60c6

Contextual Info: Preliminary Datasheet RJU60C6WDPK-M0 600V - 50A - Dual Diode Super Fast Recovery Diode R07DS0875EJ0100 Rev.1.00 Sep 03, 2012 Features • Fast reverse recovery time: trr = 100 ns typ. at IF = 30 A, di/dt = 100 A/s Per Leg  Low forward voltage: VF = 1.4 V typ. (at IF = 50 A) Per Leg

Contextual Info: Series M 50 Diode 60-100 A m p * DIODE Modules • High Surge Current Rectifier Circuits • Up to 1600 Volt Blocking Standard C3YJDM Control over power Sngle- and three-phase diode circuits incorporate highly efficient thermal management to provide high surge

TOPSWITCH 242

Abstract: topswitch StackFET
Contextual Info: LXA08T600C Qspeed Family 600 V, 8 A X-Series Common-Cathode Diode Product Summary IF AVG per diode VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 4 600 50 2.6 0.8 General Description A V nC A This device has the lowest QRR of any 600V

BOD 1-18 R

Abstract: kippdiode ABB BOD 1-17 r ABB bod 1-11 bod 1.08
Contextual Info: A S E A BROÙIN/ABB Kippdiode A3 SENICON DT- I - I 3 D DDDOen DD'Mfl3Gfl 1 Diode de retournement Breakover diode Vbo • 83D 0 0 2 1 9 Ibo Id Ih vH Iavm 1 ISM 25° C Tvj = 125°C 25°C 25° C Ta 50°C Tvj = 50° c dv/dt Ts Tvj RthJA Masse Fig. masse Typ/type

APPLICATION NOTES IGBT

Abstract: 4101 transistor 25CC
Contextual Info: 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID T k J g ^ f a a f\ 4 4 1 U I M.S. KENNEDY CORP. 8170 Thompson Road • Cicero, N.Y. 13039 315 699-9201 FEATURES: • 600V, 50 Amp Capability • Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W

SML50EUZ12S

Contextual Info: SML50EUZ12S Enhanced Ultrafast Recovery Diode 1200 Volt, 50 Amp Back of Case Cathode TECHNOLOGY SML 50EUZ12S The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

SML50EUZ12S

Contextual Info: SML50EUZ12S SEME LAB 3 D PAK Package Enhanced Ultrafast Recovery Diode 1200 Volt, 50 Amp TECHNOLOGY Back of Case Cathode The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising SML SML 10SUZ12D 50EUZ12S

Contextual Info: FFH50US60S 50 A, 600 V, STEALTH Diode Description Features The FFH50US60S is a STEALTH™ diode optimized for low loss performance in output rectification. The STEALTH™ family exhibits low reverse recovery current IRR , low VF and soft recovery under typical operating conditions. This device

600v 60A fast recovery diode

Abstract: "ultraFast Recovery Diode" SML50SUZ06LC freewheeling diode 50A 12 VOLT 150 AMP smps circuit diode 106 16V
Contextual Info: SML50SUZ06LC Ultrafast Recovery Diode 600 Volt, 2 X 50 Amp Back of Case Cathode SML 50SUZ06LC 1 - Anode 1 TECHNOLOGY The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

H100

Abstract: SML50SUZ12JD
Contextual Info: SML50SUZ12JD Ultrafast Recovery Diode 1200 Volt, 2 X 50 Amp 1- Cathode 2 2- Anode 2 TECHNOLOGY SML 50SUZ12JD The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

95089

Abstract: GB50XF120K IGBT 6PACK MODULE GB50XF120K
Contextual Info: GB50XF120K Vishay High Power Products IGBT Sixpack Module, 50 A FEATURES • Low diode VF • 10 µs short circuit capability RoHS • Square RBSOA COMPLIANT • Low VCE on non punch through IGBT technology • HEXFRED antiparallel diode with ultrasoft reverse

SML50SUZ12LC

Contextual Info: SML50SUZ12LC Ultrafast Recovery Diode 1200 Volt, 2 X 50 Amp Back of Case Cathode SML 50SUZ12LC 1 - Anode 1 TECHNOLOGY The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

NV17

Abstract: 942 rectifier diode
Contextual Info: GB50XF120K Vishay High Power Products IGBT Sixpack Module, 50 A FEATURES • Low diode VF • 10 µs short circuit capability RoHS • Square RBSOA COMPLIANT • Low VCE on non punch through IGBT technology • HEXFRED antiparallel diode with ultrasoft reverse

1200v diode to247

Abstract: SML50SUZ12B
Contextual Info: SML50SUZ12B SEME LAB Ultrafast Recovery Diode 1200 Volt, 50 Amp TO-247 Package Back of Case Cathode TECHNOLOGY The planar passivated and standard ultrafast recovery SML 50SUZ12B diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

Diode BFE 16 e

Abstract: AC480V
Contextual Info: Series M 50 Diode 60-100 Amp • DIODE Modules S iig fe - High Surge Current Rectifier Circuits Up to 1600 Volt Blocking Standard and thiee-phase diode cinuits incorporate highly e fficie n t th em a l m anagem e n t ta provide high surge capability, extended life, and lelab fe

Contextual Info: Series B48-2T, B48-2 35-50 A m p * DIODE Modules • Single and Three Phase Circuits Sngle- and three-phase diode circuits come in a panel mount package that provides 2500 Vrms isolation from the terminalsto the ceramic base. Availablein ratings up to 1600 Volts, all models are

SML50EUZ06LC

Abstract: circuit for 12 VOLT 2 AMP smps
Contextual Info: SML50EUZ06LC Enhanced Ultrafast Recovery Diode 600 Volt, 2 X 50 Amp Back of Case Cathode TECHNOLOGY SML 50EUZ06LC 1 - Anode 1 The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

50EUZ12B

Abstract: SML50EUZ12B 1200v diode to247
Contextual Info: SML50EUZ12B SEME LAB TO-247 Package Back of Case Cathode Enhanced Ultrafast Recovery Diode 1200 Volt, 50 Amp TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 50EUZ12B diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

48 VOLT 10 AMP smps

Abstract: SML50SUZ12LC
Contextual Info: SML50SUZ12LC SEME LAB Ultrafast Recovery Diode 1200 Volt, 2 x 50 Amp TO-264 Package Back of Case Cathode SML 50SUZ12LC TECHNOLOGY The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

on line ups circuit schematic diagram

Abstract: three phase on line ups circuit diagrams B48-2 B48-2T B483C-2T E72445
Contextual Info: Series B48-2T, B48-2 35-50 A m p * DIODE Modules • Single and Three Phaæ Circuits • Up to 1600 Volt Blocking Standard c a v a dm Sngle- and three-phase diode circuits come in a panel mount package that provides 2500 Vrms isolation from the terminals to the ceramic base. Available in