5.7GHZ LOW NOISE AMPLIFIER Search Results

LTC6946-3

Abstract: LTC6946 1810MHz VCO 16 pin TB 112MA sdi 0818 LTC5541 QFN-28 LTC6946IUFD-1 CI LM 4800 Marking Code h06
Contextual Info: LTC6946 Ultralow Noise and Spurious 0.37GHz to 5.7GHz Integer-N Synthesizer with Integrated VCO DESCRIPTION FEATURES n n n n n n n n n n n n Low Noise Integer-N PLL with Integrated VCO –226dBc/Hz Normalized In-Band Phase Noise Floor –274dBc/Hz Normalized In-Band 1/f Noise

LTC5541

Abstract: LTC5588-1 LTC6946
Contextual Info: LTC6946 Ultralow Noise and Spurious 0.37GHz to 5.7GHz Integer-N Synthesizer with Integrated VCO DESCRIPTION FEATURES n n n n n n n n n n n n Low Noise Integer-N PLL with Integrated VCO –226dBc/Hz Normalized In-Band Phase Noise Floor –274dBc/Hz Normalized In-Band 1/f Noise

ltc6946

Abstract: ALC 653 LTC5541 6-946 sdi 0818 HHM1589B1 LTC5588-1
Contextual Info: LTC6946 Ultralow Noise and Spurious 0.37GHz to 5.7GHz Integer-N Synthesizer with Integrated VCO DESCRIPTION FEATURES n n n n n n n n n n n n Low Noise Integer-N PLL with Integrated VCO –226dBc/Hz Normalized In-Band Phase Noise Floor –274dBc/Hz Normalized In-Band 1/f Noise

NJS8475S

Abstract: NJR2117HA NJR2175F NJR2135S NJR2136S NJR2112F NJR2139S NJR2135H NJR2137S ku-band pll lnb
Contextual Info: MICROWAVE DEVICES, COMPONENTS & EQUIPMENTS HIGHTYPEPOWER FET AMPLIFIERS POWER RANGE ou-mrr NJS8600 Series *5.4~5.7GHz 20W TYP. NJR8106 14.0~14.5GHz 2.5W * OTHER FREQUENCY RANGE AVAILABLE ON REQUEST GAIN REMARK 50dB TYP. 50dB TYP. PULSE OR CW Ku/C BAN!3 LOW NOISE CONVERTERS AND MlUIC MODULES

CAP, 0603 4.7pF

Abstract: SOF-26 SZP-5026 5.7Ghz low noise amplifier MCH184CN105K 802.11a Amplifier Schematics 5250 SZP-5026Z 600S5
Contextual Info: SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier SZP-5026Z Preliminary 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar

Contextual Info: RFPA5026 RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: DFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features        RFPA5026 P1dB=33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,

Contextual Info: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features        RFPA5026 P1dB=33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,

SZP-5026

Abstract: 600s5r6cw250 5.7Ghz low noise amplifier SOF-26 SZP-5026Z MLCC rework recommended land pattern for 0402 cap e483
Contextual Info: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power

Contextual Info: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power

Contextual Info: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026  P1dB =33dBm at 5V  802.11g 54Mb/s Class AB Performance  POUT =25dBm at 2.5% EVM,

Contextual Info: SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier SZP-5026Z Preliminary 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar

SZP-5026Z

Abstract: SZP5026Z SZP-5026 Schematics 5250 SZP-5026Z-EVB1 SZP-5026Z-EVB2 bipolar transistor ghz s-parameter SOF-26 marking 535 RF
Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZP-5026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with

SOF-26

Abstract: SZP-5026 SZP-5026Z 5.7Ghz low noise amplifier 600S4R7
Contextual Info: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power

600S4R7

Abstract: 600S0R5CW250 0805HQ-5N6XJBB Coilcraft 0805 e483 SZP-5026 ZO21 szp-5026z 600S5R6 600S4R7cw250
Contextual Info: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power

SZP-5026-HWD

Contextual Info: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power

transistor u8 2w

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZP-5026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with

RX-2-G

Abstract: tx2g tx 2G rx2g Rx 2G qam circuit RX-2G TX-2G power amplifier 5 ghz bluetooth pinout
Contextual Info: AWL9566 802.11a/n PA, LNA & Switch with 802.11b/g/n RX/TX/Bluetooth Switch ADVANCED PRODUCT INFORMATION - Rev 0.0 FEATURES • 3% Dynamic EVM @ POUT = +18 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 18 dB of Linear Power Gain in 5 GHz Band • 3 dB Noise Figure in 5 GHz Band

RF5608

Contextual Info: RF5608 Proposed 3.0V TO 3.6V, DUAL-BAND FRONT-END MODULE Features SWTX 1 GND 2 VCC PDET5 GND VCC VCC VCC GND TX5_N Package Style: 32-Pin, 5mmx5mmx0.9mm 32 31 30 29 28 27 26 25 24 GND 23 RX5 PA5 Integrated 2.5GHz & 5GHZ PA’s, Diplexer LNA for both High and

circuit diagram of wireless door lock system

Abstract: wireless mobile charging through microwaves working and block diagram of ups DSSS transceiver CIRCUIT DIAGRAM FOR WIRELESS DATA MODEM SA8016 RF transceiver 2.4GHz 2.4Ghz DSSS radio AD operation amplifier SA1630
Contextual Info: W RELESS BUSINESS LINE Wireless LAN Benno Ritter W RELESS BUSINESS LINE NNN-FML-Y-1 Wireless LAN Market FToday üOffice environment mobile applications ¥ WLAN adapters or NICs/ PCMCIA cards, WLAN access points ¥ Wireless Fax/Modems terminals üCommerce based applications

power amplifier 5 ghz

Abstract: RF5328 RF2472 mimo transceiver sot23-5 rf amplifier p12 QFN16 RF sot23-5 amplifier p12
Contextual Info: RF53283.3 V, 5 GHz Linear Power Amplifier RF5328 Preliminary 3.3 V, 5 GHz LINEAR POWER AMPLIFIER VC2 VC3 NC 16 15 14 13 Features „ 11 RF OUT RF IN 2 Input Match 27 dB Typical Gain Across Band Interstage Match Output Match 10 RF OUT RF IN 3 POUT = 18 dBm @ 4% TYP EVM

m1305 transistor

Abstract: w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw
Contextual Info: INTEGRATED CIRCUITS BIPOLAR OPERATIONAL AMPLIFIER TY PE s I N G ¥ D U A L Q u A D H E X D E S C R IP T IO N NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM 022 N JM 022B NJM 062 N JM 072B N JM 082B NJM353 NJM1458 NJM2041 NJM2043 NJM2068 NJM2082

alcohol sensor abstract

Abstract: APP4429 MAX5418 AN44-29 staircase generator app abstract
Contextual Info: Maxim > App Notes > Digital Potentiometers Prototyping and PC-Board Layout Keywords: inexperienced engineer, leakage, environmental contamination, radio frequency, interference, electro static discharge, guard bands, sigma, standard deviation specification, automatic test equipment, ATE, second guaranteed

W2L14Z225M

Abstract: LLA219C70G225M LTC5569 LTC2271 LTC5584 LTC5585
Contextual Info: LTC2271 16-Bit, 20Msps Serial Low Noise Dual ADC FEATURES DESCRIPTION n The LTC 2271 is a 2-channel, simultaneous sampling 16-bit A/D converter designed for digitizing high frequency, wide dynamic range signals. It is perfect for demanding communications applications with AC performance that

DAP8

Abstract: LT5579 DAP11 DAP 08 power supply DBP11 LTC2000-11 LTC2000-14 LTC6946 LTC2997
Contextual Info: LTC2000 16-/14-/11-Bit 2.5Gsps DACs Features Description 80dBc SFDR at 70MHz fOUT n >68dBc SFDR from DC to 1000MHz f OUT n 40mA Nominal Full-Scale, ±1V Output Compliant n 10mA to 60mA Adjustable Full-Scale Current Range n Single or Dual Port DDR LVDS and DHSTL Interface