5.1 AMPLIFIER IC Search Results

Contextual Info: MGA-25203 5.1-5.9GHz 3x3mm WiFi and WiMAX Power Amplifier Data Sheet Description Features Avago Technologies MGA-25203 linear power amplifier is designed for mobile and fixed wireless data applications in the 5.1 to 5.9 GHz frequency ranges. The PA is optimized

MGA-25203

Abstract: MGA-25203-BLKG 58GH
Contextual Info: MGA-25203 5.1 - 5.9 GHz WiFi and WiMAX Power Amplifier 3x3mm Data Sheet Description Features Avago Technologies MGA-25203 linear power amplifier is designed for mobile and fixed wireless data applications in the 5.1 to 5.9 GHz frequency ranges. The PA is optimized

Contextual Info: RFS1003 5.1-5.9 GHz U-NII Power Amplifier 2 GND N/C VD2 1 GND N/C VD1 The RFS1003 power amplifier is a high-power, highperformance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency band. With a P1dB of 29 dBm, the device is ideal as a

Contextual Info: 2SC4707 SILICON NPN EPITAXIAL TYPE LOW FREQUENCY AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. 5.1 MAX SWITCHING APPLICATIONS. . Excellent hFE Linearity : h F E 2 = 3 5 (Min.), (VCE=2V, IC=300mA) . Complementary to 2SA1811 MAXIMUM RATINGS (Ta=25°C)

Contextual Info: 2SA817A TOSHIBA 2SA817A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. • • 5.1 MAX Complementary to 2SC1627A. Driver Stage Application of 30 to 35 Watts Amplifiers.

A965

Abstract: 2SA965 2SC2235
Contextual Info: 2SA965 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA965 Unit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • 5.1 MAX Complementary to 2SC2235. MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage

toshiba 2sa965 audio power amplifier

Abstract: 2SA965 2SC2235
Contextual Info: TOSHIBA 2SC2235 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2235 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 5.1 M AX DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SA965. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

2SA965

Abstract: 2SC2235
Contextual Info: TOSHIBA 2SA965 2SA965 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • 5.1 M AX Complementary to 2SC2235. MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage

2SC1627A

Abstract: 2SA817A 2SA817A transistor
Contextual Info: TOSHIBA 2SC1627A 2SC1627A TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. 5.1 MAX. VOLTAGE AMPLIFIER APPLICATIONS. • • Complementary to 2SA817A. Driver Stage Application of 30 to 35 Watts Amplifiers.

2SK30ATM 0

Abstract: 2SK30ATM TOSHIBA 2SK30ATM
Contextual Info: TO SH IB A 2SK30ATM TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK30ATM LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS U nit in mm . 5.1 M AX. • High Breakdown Voltage : V Gj g = —50 V

2SA817A

Abstract: 2SC1627A
Contextual Info: 2SA817A TO SH IBA 2SA817A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. • • 5.1 MAX Complementary to 2SC1627A. Driver Stage Application of 30 to 35 Watts Amplifiers.

TC75S60F

Abstract: TC75S60FU tc75s60
Contextual Info: TC75S60F/FU TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S60F,TC75S60FU Single Operational Amplifier TC75S60F, TC75S60FU are CMOS operational amplifier with low supply voltage, low supply current. TC75S60F Features • High slew rate: SR VDD = 3 V = 5.1 V/µs (typ.)

applications of single stage common emitter

Abstract: 2SA817A 2SC1627A
Contextual Info: TOSHIBA 2SA817A 2SA817A TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. • • 5.1 M A X Complementary to 2SC1627A. Driver Stage Application of 30 to 35 Watts Amplifiers.

TC75S60F

Abstract: TC75S60FU
Contextual Info: TC75S60F/FU TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S60F, TC75S60FU Single Operational Amplifier TC75S60F, TC75S60FU are CMOS operational amplifier with low supply voltage, low supply current. TC75S60F Features • High slew rate: SR VDD = 3 V = 5.1 V/µs (typ.)

TC75S60F

Abstract: TC75S60FU
Contextual Info: TC75S60F/FU TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S60F,TC75S60FU Single Operational Amplifier TC75S60F, TC75S60FU are CMOS operational amplifier with low supply voltage, low supply current. TC75S60F Features • High slew rate: SR VDD = 3 V = 5.1 V/ s (typ.)

2SC1627A

Abstract: EC-200 2SA817A
Contextual Info: 2SC1627A TO SH IBA 2SC1627A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. 5.1 M A X . VOLTAGE AMPLIFIER APPLICATIONS. • • Complementary to 2SA817A. Driver Stage Application of 30 to 35 Watts Amplifiers.

2SA1811

Abstract: 2SC4707
Contextual Info: TOSHIBA 2SC4707 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4707 Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. 5.1 MAX. SWITCHING APPLICATIONS. • • Excellent hjpg Linearity : hKE 2 -35 (Min.), (Vç;e = 2V, Iç;= 300mA)

2SC1815M

Abstract: 2SC1815 2SA1015
Contextual Info: TO SHIBA 2SA1015 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 015 Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS . 5.1 M AX. • High Voltage and High Current. : V c e O - —50V (Min.), Ic = —150mA (Max.)

Contextual Info: TOSHIBA 2SC4604 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATIONS. • SILICON NPN EPITAXIAL TYPE 2SC4604 Unit in mm 5.1 MAX Low Collector-Emitter Saturation Voltage : v CE sat = °-5V (max.) (Ic = 1.5A) High Speed Switching : tstg = 0.5/*s (Typ.)

2sa1015 transistor

Abstract: 2sc1815a 2SA1015 transistor 2sa1015 2sc1815
Contextual Info: TOSHIBA 2SA1015 Transistor U nit in m m Silicon PNP Epitaxial Type PCT Process 5.1 MA X . Audio Frequency General Purpose Amplifier Applications Features • High Voltage and High Current. - Vceo = -50V (Min.), Ic = 150mA (Max.) • Excellent hFE Linearity

Contextual Info: TO SHIBA 2SA562TM TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA562TM Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS . 5.1 M AX. SWITCHING APPLICATIONS • Excellent hpE Linearity. hpE (2) - 2 5 (Min.) at V q E = -6 V , I q = —400mA

sa1020

Contextual Info: TOSHIBA TRANSISTOR SEM ICONDUCTOR TOSHIBA TECHNICAL 2 SA1020 SILICON PNP EPITAXIAL TYPE PCT PROCESS DATA (2SA1020) POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 5.1 MAX Low Collector Saturation Voltage • VCE(sat)“ —0.5V (Max.) (I e = -1 A )

Contextual Info: 2SC4604 SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER APPLICATION. Unit in mm 5.1 MAX POWER SWITCHING APPLICATIONS. . Low Collector-Emitter Saturation Voltage : VcE sat = 0.5V(max.) . High Speed Switching (Ic=1.5A) : tstg-0.5 u s (Typ.) 0 75 MAX 1.0 MAX . Complementary to 2SA1761

Contextual Info: TOSHIBA 2SC1959 2SC1959 TO SHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY LO W POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SW ITCHING APPLICATIONS • . 5.1 M A X . Excellent hpg Linearity : hpE (2) = 25 (Min.) : V çe = 6V, Iç = 400mA