5.1 AMPLIFIER IC Search Results

MGA-25203

Abstract: MGA-25203-BLKG 58GH
Contextual Info: MGA-25203 5.1 - 5.9 GHz WiFi and WiMAX Power Amplifier 3x3mm Data Sheet Description Features Avago Technologies MGA-25203 linear power amplifier is designed for mobile and fixed wireless data applications in the 5.1 to 5.9 GHz frequency ranges. The PA is optimized

Contextual Info: 2SC4707 SILICON NPN EPITAXIAL TYPE LOW FREQUENCY AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. 5.1 MAX SWITCHING APPLICATIONS. . Excellent hFE Linearity : h F E 2 = 3 5 (Min.), (VCE=2V, IC=300mA) . Complementary to 2SA1811 MAXIMUM RATINGS (Ta=25°C)

Contextual Info: 2SA817A TOSHIBA 2SA817A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. • • 5.1 MAX Complementary to 2SC1627A. Driver Stage Application of 30 to 35 Watts Amplifiers.

toshiba 2sa965 audio power amplifier

Abstract: 2SA965 2SC2235
Contextual Info: TOSHIBA 2SC2235 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2235 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 5.1 M AX DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SA965. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

2SA965

Abstract: 2SC2235
Contextual Info: TOSHIBA 2SA965 2SA965 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • 5.1 M AX Complementary to 2SC2235. MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage

TC75S60F

Abstract: TC75S60FU tc75s60
Contextual Info: TC75S60F/FU TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S60F,TC75S60FU Single Operational Amplifier TC75S60F, TC75S60FU are CMOS operational amplifier with low supply voltage, low supply current. TC75S60F Features • High slew rate: SR VDD = 3 V = 5.1 V/µs (typ.)

Contextual Info: TOSHIBA 2SC2235 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2235 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 5.1 MAX DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SA965. 0.75MAX 1.0M AX 0.8MAX as 0.6 MAX MAXIMUM RATINGS (Ta = 25°C)

2SC1815M

Abstract: 2SC1815 2SA1015
Contextual Info: TO SHIBA 2SA1015 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 015 Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS . 5.1 M AX. • High Voltage and High Current. : V c e O - —50V (Min.), Ic = —150mA (Max.)

2sa1015 transistor

Abstract: 2sc1815a 2SA1015 transistor 2sa1015 2sc1815
Contextual Info: TOSHIBA 2SA1015 Transistor U nit in m m Silicon PNP Epitaxial Type PCT Process 5.1 MA X . Audio Frequency General Purpose Amplifier Applications Features • High Voltage and High Current. - Vceo = -50V (Min.), Ic = 150mA (Max.) • Excellent hFE Linearity

Contextual Info: TO SHIBA 2SA562TM TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA562TM Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS . 5.1 M AX. SWITCHING APPLICATIONS • Excellent hpE Linearity. hpE (2) - 2 5 (Min.) at V q E = -6 V , I q = —400mA

sa1020

Contextual Info: TOSHIBA TRANSISTOR SEM ICONDUCTOR TOSHIBA TECHNICAL 2 SA1020 SILICON PNP EPITAXIAL TYPE PCT PROCESS DATA (2SA1020) POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 5.1 MAX Low Collector Saturation Voltage • VCE(sat)“ —0.5V (Max.) (I e = -1 A )

Contextual Info: TOSHIBA 2SC1959 2SC1959 TO SHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY LO W POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SW ITCHING APPLICATIONS • . 5.1 M A X . Excellent hpg Linearity : hpE (2) = 25 (Min.) : V çe = 6V, Iç = 400mA

2N5550

Contextual Info: TOSHIBA TRANSISTOR_ 2N5550 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE Unit in nun AMPLIFIER APPLICATIONS. . 5.1 MAX. . r 1 . High Collector Breakdown Voltage : VcB O = 160V , VcEO= 1 ^ o v . Low Leakage Current

Contextual Info: TOSHIBA 2SA1811 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S A 1 811 Unit in mm LO W FREQUENCY AM PLIFIER APPLICATIONS. 5.1 MAX DRIVER STAGE AMPLIFIER APPLICATIONS. SW ITCHING APPLICATIONS. Excellent hEE Linearity : hFE 2 = 35 (M in.), (VCE= -2 V , IC = -300m A )

Contextual Info: 2SD2206 SILICON NPN EPITAXIAL TYPE DARLINGTON POWER MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm 5.1 M A X . High DC Current Gain : hFE= 200(Min. ) (Vce=2V, I c = 1A) . Low Saturation Voltage

2SC2498

Contextual Info: TOSHIBA 2SC2498 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2498 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION MAXIMUM RATINGS Ta = 4.7 M A X . , 5.1 M A X 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage

2SC2644

Abstract: 2SC264
Contextual Info: TOSHIBA 2SC2644 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2644 Unit in mm VHF-UHF BAND WIDEBAND AMPLIFIER APPLICATIONS. 5.1 MAX. , • • • High Gain Low IMD fp = 4GHz Typ. 0.55M AX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

1 micro farad capacitor

Abstract: 100 micro farad capacitor ECG012 high power amplifier sot89
Contextual Info: PRELIMINARY DATA SHEET ECG012 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications n n DC to 2500 MHz 35 dBm Typical OIP3 at 2400 MHz Highly Reliable InGaP HBT 20.0 dBm Typical P1dB at 2400 MHz 5.1 dB Typical Noise Figure at 900 MHz Excellent Stability

5.1 amplifier schematic

Abstract: 5.1 power amplifier circuit diagram amplifier 5.1 5.1 transistor amplifier circuit diagram 5.1 amplifier circuit diagram HMC408LP3 HMC408 5.8 ghz amplifier power 15 watt power supply circuit diagram application notes Microwave
Contextual Info: MICROWAVE CORPORATION HMC408LP3 v02.0604 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC408LP3 is ideal for: Gain: 20 dB • 802.11a & HiperLAN WLAN Saturated Power: +32.5 dBm @ 27% PAE • UNII & Pt-Pt / Multi-Pt. Radios

A1761

Abstract: 2SA1761 2SC4604
Contextual Info: TOSHIBA 2SA1761 2 S A 1 761 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE POWER SWITCHING APPLICATIONS. • Unit in mm 5.1 M A X Low Colleetor-Emitter Saturation Voltage • VCE sat “ —0.5V (Max.) (1^ = -1.5A) High Speed Switching Time : tgtg = 0.2y«s (Typ.)

sst11cp15-qube

Abstract: S7142
Contextual Info: 4.9-5.8 GHz High-Linearity Power Amplifier SST11CP15 Data Sheet FEATURES: • Small Package Size • High Linear Output Power: – 802.11a OFDM Spectrum mask compliance up to 23 dBm – Added EVM~2.5% up to 18 dBm, typically, across 5.1-5.8 GHz for 54 Mbps 802.11a signal

Contextual Info: T O SH IB A 2SC3329 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 1çC 337Q Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HEAD AMPLIFIERS 5.1 M AX. • Very Low Noise in the Region of Low Signal Source Impedance

A1680

Abstract: transistor A1680 2sa1680 TRANSISTOR 2SA1680 2SC4408 transistor 2SA1680
Contextual Info: TOSHIBA 2SA1680 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 POWER AMPLIFIER APPLICATIONS. POWER SW ITCHING APPLICATIONS. Unit in mm 5.1 MAX • Low Collector Saturation Voltage : v CE(sat)= - 0 .5 V (Max.) (1^ = -1 A ) • High Collector Power Dissipation : Pg = 900mW (Ta = 25°C)

Contextual Info: T O SH IB A 2SC4408 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4408 Unit in mm 5.1 M A X . POWER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage : V qe (sat) = 0*5V (Max.) High Collector Power Dissipation : P q = 900mW (Ta = 25°C)