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5C-13
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Behlman Electronics
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DC-DC Converter: (18 to 72) V to (15) V |
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61.46KB |
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5C-13
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Broadband TelCom Power
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DC-DC Converter: (18 to 72) V to (15) V |
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68.83KB |
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BZD55C13
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Jiangsu JieJie Microelectronics Co Ltd
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Silicon power Zener diodes in SOD-123FL package with 1000mW power rating, voltage range 6.8V to 100V ±5%, low zener impedance, and surge current capability for stabilization and clamping applications.Silicon power Zener diodes in SOD-123FL package with 1W power rating, voltage range 6.8V to 100V, ±5% tolerance, low zener impedance, and surge current capability for high-power stabilization and clamping circuits.Silicon power Zener diode in SOD-123FL package, 1W power rating, zener voltage range 6.8V to 100V with ±5% tolerance, low zener impedance, designed for high-power stabilization and clamping circuits.Silicon power Zener diodes in SOD-123FL package with 1000mW power dissipation, low zener impedance, and breakdown voltages from 6.8V to 100V at ±5%, suitable for voltage regulation and clamping circuits.Silicon power Zener diodes in SOD-123FL package with 1.0W power dissipation, voltage range 6.8V to 100V, ±5% tolerance, low zener impedance, and surge current capability for use in voltage regulation and clamping circuits.Silicon power Zener diode in SOD-123FL package with 1000mW power rating, low zener impedance, and breakdown voltage range of 6.8V to 100V at ±5%, suitable for high-power stabilization and clamping circuits.Silicon power Zener diodes in SOD-123FL package with 1W power rating, low zener impedance, and breakdown voltages from 6.8V to 100V at ±5%, suitable for voltage regulation and clamping applications.Silicon power Zener diodes in SOD-123FL package with 1W power rating, voltage range 6.8V to 100V, ±5% tolerance, low zener impedance, and surge current capability for stabilization and clamping applications.Silicon power Zener diode in SOD-123FL package with 1W power rating, low zener impedance, and breakdown voltage range of 6.8V to 100V at ±5%, suitable for high-power stabilization and clamping circuits. |
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BZG05C13
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SUNMATE electronic Co., LTD
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Surface mount silicon Zener diode in SMA (DO-214AC) package with 3.0W power dissipation, 3.9V to 100V voltage range, low leakage current, high reliability, and operating junction temperature from -55 to +150°C.Surface mount silicon Zener diode BZG05C3V9 in SMA (DO-214AC) package with 3.0W power dissipation, 3.9V to 100V voltage range, low leakage current, and operating junction temperature from -55 to +150°C.Surface mount silicon Zener diode in SMA (DO-214AC) package with 3.0W power dissipation, 3.9V to 100V voltage range, low leakage current, high reliability, and operating junction temperature from -55 to +150°C.Surface mount silicon Zener diode in SMA (DO-214AC) package with 3.0W power dissipation, 3.9V to 100V voltage range, low leakage current, high reliability, and operating junction temperature from -55 to +150°C. |
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BZX85C13
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SUNMATE electronic Co., LTD
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Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, low leakage current, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, forward voltage up to 1.0V, and junction temperature range from -55 to +175°C. |
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BZX85C130
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SUNMATE electronic Co., LTD
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Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, low leakage current, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, forward voltage up to 1.0V, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a 1.3W power dissipation, voltage range from 2.4V to 200V, DO-41 package, and junction temperature range of -55 to +175°C.Axial leaded silicon Zener diode with a zener voltage range of 2.4 to 200V, 1.3W power dissipation at 50°C, forward voltage up to 1.0V, and junction temperature range from -55 to +175°C.Axial leaded silicon Zener diode with a 1.3W power dissipation, voltage range from 2.4V to 200V, DO-41 package, and junction temperature range of -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C.Axial leaded silicon Zener diodes in DO-41 package with 1.3W power dissipation, 2.4 to 200V zener voltage range, 130 K/W thermal resistance, and operating junction temperature from -55 to +175°C. |
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BZD55C13
