5 PINS MOSFET Search Results

smd transistor 6m

Contextual Info: OptoMOS Solid State Telecom Switches Relay Portion Pins 1,2,7,8 Engineering S pecificatio ns D ete cto r Portion (Pins 3 ,4 ,5 ,6 )* TS 117 Engineering S pecifications TS 117 O utput C haracteristics (Pins 7,8) O n-R esistance at 120 mA lLoaD(Ohms) Minimum

AQS610TS

Abstract: AQS610TSX AQS610TSZ
Contextual Info: GU PhotoMOS AQS610TS TESTING 3-channel (1a1b MOSFET & optocoupler) SOP 16-pin type. 1a1b MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 mm inch 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Relay portion (2,3,14,15,16 pins) (4,5,11,12,13 pins)

Contextual Info: GU PhotoMOS AQS610TS TESTING 3-channel (1a1b MOSFET & optocoupler) SOP 16-pin type. 1a1b MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 mm inch 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Relay portion (2,3,14,15,16 pins) (4,5,11,12,13 pins)

CX20551

Abstract: MTP81 R5538 BAV88 isl6260 HP PAVILION G6 Quanta R52 HP Pavilion g6 CF 309 ICS954206AGT quanta
Contextual Info: 1 2 3 4 5 6 PCB STACK UP 8 CT6 BLOCK DIAGRAM LAYER 1 : TOP LAYER 2 : GND Calistoga / Yonah /ICH-7m CPU THERMAL SENSOR LAYER 3 : IN1 A 7 CPU Yonah/Merom LAYER 4 : IN2 LAYER 5 : VCC XXX Pins uPGA LAYER 6 : BOT 14.318MHz PG 5 PG 38 CLOCK GEN PG 3,4 SBLINKCLK, SBLINKCLK#

Contextual Info: SI6465DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET New Product V d s (V) -8 I Rd s io m ) (£2) I 0.012 @ VGS = -4 .5 V ±8.8 I 0.017 @ VGS = -2 .5 V ±7.4 I 0.025 @ VGs - -1.8 V ± 6 .0 I d (A) so TSSOP-8 O D [T it 'Source Pins 2, 3, 6 and 7 must be tied common

CX20468-31

Abstract: CX20468 MC9701 RS480M hp pavilion r62 hp pavilion g6 u2343 KBC-NS87551L IR7832 MFB902
Contextual Info: 1 2 3 4 5 6 PCB STACK UP LAYER 2 : GND A DDR-SODIMM1 CLAW HAMMER / RS480 / SB400 CPU THERMAL SENSOR DDR 266,333,400MHz GMT-781 CPU CLAW HAMMER LAYER 4 : IN2 LAYER 5 : VCC 8 CT8 BLOCK DIAGRAM LAYER 1 : TOP LAYER 3 : IN1 7 14.318MHz 754 Pins uPGA DDR-SODIMM2

Contextual Info: Omron 08 Cat 303-464 5/10/07 15:48 Page 398 MOSFET Relays – G3VM-41LR3 Text J Text MOSFET Relays – G3VM-41LR4 Absolute Maximum Ratings Ta = 25°C Note 1. The dielectric strength between the input and output was checked by applying voltage between all pins as a

G3VM-41LR3

Abstract: "Common Precautions" for all G3VM models all mosfet list
Contextual Info: Omron 08 Cat 303-464 5/10/07 15:48 Page 396 MOSFET Relays – G3VM-21LR10 Text J Text MOSFET Relays – G3VM-41LR3 Absolute Maximum Ratings Ta = 25°C Note 1. The dielectric strength between the input and output was checked by applying voltage between all pins as a

AQS610TS

Abstract: AQS610TSX AQS610TSZ
Contextual Info: AQS610TS TESTING GU General Use Type SOP Series Multi-function (1a1b MOSFET & optocoupler) 16 Pin Type 1a1b MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 mm inch 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Relay portion (2,3,14,15,16 pins)

fds mosfet

Contextual Info: Tem ic SÌ6435DQ S em i co n d u c t or s P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V ) r DS(on) ( ^ ) I d (A ) 30 0.040 @ V o s = -1 0 V 0.070 @ V o s = -4 .5 V ± 4 .5 ± 3 .4 s*o TSSOP-8 °n Top View *Source Pins 2, 3, 6 and 7 must be tied common.

G3VM-21GR1

Abstract: G3VM-41GR4 41GR4
Contextual Info: Omron 08 Cat 303-464 5/10/07 15:48 Page 362 MOSFET Relays – G3VM-41GR3 Text J Text MOSFET Relays – G3VM-41GR4 Absolute Maximum Ratings Ta = 25°C Note 1. The dielectric strength between the input and output was checked by applying voltage between all pins as a group on

L6918

Abstract: L6918A
Contextual Info: L6918 L6918A 5 BIT PROGRAMMABLE MASTER/SLAVE MULTIPHASE CONTROLLER COMING SOON DESCRIPTION voltage between 1.1V and 1.85V in 25mV steps as required by VRM 9.0 processors specification. Master and slave devices share the same reference programmed by the VID pins.

Siliconix

Abstract: S-54704 It83
Contextual Info: SÌ6466DQ Vishay Siliconix N-Channel 2.5-V G-S MOSFET Vos (VJ Ros(on) i Q) ip (A) 0.014 @ Vqs = 4.5 V ±7.8 0.021 @ Vqs = 2-5 V ±6.3 e < f> " A 20 D O TSSOP-8 • UE * Source Pins 2, 3, 6 and 7 must be tied common. Top View Ô S' N-Channel MOSFET wtmmmm

Contextual Info: AN11374 Pin FMEA for NX3P switches Rev. 1 — 5 August 2013 Application note Document information Info Content Keywords FMEA Abstract This application note provides a Failure Modes and Effects Analysis FMEA for the device pins of NXP Semiconductors logic controlled high

Contextual Info: PRODUCT CÂTÂlûi Æ iition N-CHANNEL ENHANCEMENT MOS FET 400V, 2 5 A , 0.21Q SDF360 SDF360 SDF360 SDF360 RGS=1.0Mn (1 ) RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE

Contextual Info: Tem ic siiiconix_SÌ6436DQ N-Channel Enhancement-Mode MOSFET Product Summary VD S V rDS(on) ( ß ) I d (A) 0.045 @ V q s = 10 V ± 4 .4 0.070 @ V GS = 4.5 V ± 3 .5 30 D O TSSOP-8 'S o u rc e Pins 2, 3, 6 a n d 7 m ust be tied com m on.

Si6433DQ

Contextual Info: Siliconix PĆChannel EnhancementĆMode MOSFET Si6433DQ Product Summary VDS V -12 rDS(on) (W) ID (A) 0.06 @ VGS = -4.5 V "4.0 0.10 @ VGS = -2.7 V "3.0 S* TSSOPĆ8 D S S G 1 2 3 D 8 Si6433DQ 4 7 6 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common.

Si6447DQ

Contextual Info: Si6447DQ Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.09 @ VGS = –10 V "3.2 0.16 @ VGS = –4.5 V "2.4 S* TSSOP-8 D D 8 D 7 S 3 6 S 4 5 D 1 S 2 S G Si6447DQ G * Source Pins 2, 3, 6 and 7 must be tied common.

Si6459DQ

Contextual Info: Si6459DQ Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "2.6 0.150 @ VGS = –4.5 V "2.4 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6459DQ G * Source Pins 2, 3, 6 and 7 must be tied common.

Si6459DQ

Contextual Info: Si6459DQ Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "2.6 0.150 @ VGS = –4.5 V "2.4 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6459DQ G * Source Pins 2, 3, 6 and 7 must be tied common.

Si6415DQ

Contextual Info: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.019 @ VGS = –10 V "6.5 0.030 @ VGS = –4.5 V "5.2 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6415DQ G * Source Pins 2, 3, 6 and 7 must be tied common.

Si6447DQ

Contextual Info: Si6447DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.09 @ VGS = –10 V "3.2 0.16 @ VGS = –4.5 V "2.4 S* TSSOP-8 D S S G 1 D 2 8 7 Si6447DQ 3 6 4 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View

Si6435DQ siliconix

Contextual Info: Temic siiiconix_SÌ6435DQ P-Channel Enhancement-Mode MOSFET Product Summary V d s V rDS(on) ( ß ) 30 I d (A) 0.040 @ Vc,s = - 1 0 V ±4.5 0.070 @ VGS = -4 .5 V ±3.4 T S S O P -8 D [T s d j ] • SÍ643SDQ S [T G d D *Source Pins 2, 3, 6 a n d 7

S-49534

Abstract: Si6433DQ
Contextual Info: Si6433DQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.06 @ VGS = –4.5 V "4.0 0.09 @ VGS = –2.5 V "3.0 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6433DQ G * Source Pins 2, 3, 6 and 7 must be tied common.