5 LEAD DD PAK Search Results

LT1965

Abstract: ic regulator
Contextual Info: DEMO C IR C U IT 1 1 7 2 A Q U IC K S TAR T GLT1965 U IDE L T 1 9 6 5 EDD 1 .1 A L o w Dro p o u t R e g u la to r DESCRIPTION Demonstration circuit 1172A is a low dropout linear regulator featuring LT 1965, w hich comes in 5-lead TO -220, 5-lead DD-PAK as w ell as the thermally enhanced 8-lead M SO P and 8-lead 3mmX3mm DFN

5-Lead Plastic DD Pak ltc Q

Abstract: 5 lead plastic dd pak 5 lead dd pak Reference LTC DWG
Contextual Info: Q Package 5-Lead Plastic DD Pak Reference LTC DWG # 05-08-1461 Rev E .256 (6.502) .060 (1.524) TYP .060 (1.524) .390 – .415 (9.906 – 10.541) .165 – .180 (4.191 – 4.572) .045 – .055 (1.143 – 1.397) 15° TYP .060 (1.524) .183 (4.648) +.008 .004 –.004

Contextual Info: APT47N60BC3 G APT47N60SC3(G) 600V 47A 0.070 TO Super Junction MOSFET -24 7 D 3 PAK • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated • Popular TO-247 or Surface Mount D3 package.

infineon cool MOSFET dynamic characteristic test

Contextual Info: 600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET COOL MOS B TO Po we r Se miconduc tors -24 7 D 3 PAK • Ultra Low RDS(ON) (S) • Low Miller Capacitance • Ultra Low Gate Charge, Qg

Contextual Info: STB30NE06L N - CHANNEL 60V - 0.35H - 30A - D^PAK _STripFET POWER MOSFET PRELIMINARY DATA TYPE STB30N E06L V dss R dS oii Id 60 V < 0.05 Q. 30 A . • TYPICAL R D S (on) = 0.035 100% AVALANCHE TESTED . LOW GATE CHARGE 100 °C . APPLICATION ORIENTED

Contextual Info: IRFR/U014A A d van ced Power MOSFET FEATURES B V DSS - 60 V Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology o II ♦ Lower Input Capacitance 00 ho ♦ 0 .1 4 0 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 60V

Contextual Info: IRFR/U214A A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology 250 V 2.0Q ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 2.2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|^A(Max.) @ V DS = 250V

Contextual Info: IRFW/IZ14A A d van ced Power MOSFET FEATURES BV DSS = 60 V ♦ Avalanche Rugged Technology 0.1 4Q ♦ Rugged Gate Oxide Technology ^D S o n - ♦ Lower Input Capacitance In = 1 0 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ 175°C Operating Temperature

Contextual Info: IRFR014 A d van ced Power MOSFET FEATURES B V DSS - 60 V Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology o II ♦ Lower Input Capacitance 00 ho ♦ 0 .1 4 0 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 60V

Contextual Info: IRFR214 A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology 250 V 2.0Q ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 2.2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|^A(Max.) @ V DS = 250V

Contextual Info: IRFW/IZ24A A d van ced Power MOSFET FEATURES B V DSS = 60 V ♦ Avalanche Rugged Technology ^D S o n - ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 7 Q , 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ 175°C Operating Temperature

Contextual Info: STB5NB80 N - CHANNEL 800V - 1 ,8H - 5A - D^PAK PowerMESH MOSFET TYPE S TB5N B80 • . . . . . V d ss R d S o ii Id 800 V < 2.2 Q. 5 A TYPICAL RDS(on) = 1 -8 £1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

Contextual Info: IRFWZ14 A d van ced Power MOSFET FEATURES BV DSS = 60 V ♦ Avalanche Rugged Technology 0.1 4Q ♦ Rugged Gate Oxide Technology ^D S o n - ♦ Lower Input Capacitance In = 1 0 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ 175°C Operating Temperature

Contextual Info: STB60NE03L-12 N - CHANNEL 30V - 0.009 i ì - 60A - D^PAK "SINGLE FEATURE SIZE " POWER MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id S TB60N E03L-1 2 30 V < 0.012 a 60 A • . . . . . . . TYPICAL RDS(on) = 0.009 AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: IRLR/U210A A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 1 .5 0 . ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 2 .7 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 200V

Contextual Info: IRLR210 A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 1 .5 0 . ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 2 .7 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 200V

Contextual Info: IRFR/U024A A d van ced Power MOSFET FEATURES BV DSS = 60 V ♦ Avalanche Rugged Technology ^D S o n - ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 0 .0 7 Q , In = 1 5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 60V

Contextual Info: IRFR224 A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 1 .1 £2 ♦ Rugged Gate Oxide Technology o II ♦ Lower Input Capacitance CO bo ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V

Contextual Info: IRFR/U224A A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 1 .1 £2 o II ♦ Lower Input Capacitance bo ♦ Rugged Gate Oxide Technology CO ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V

TRANSISTOR mosfet k2

Contextual Info: STB60NE06L-16 N - CHANNEL 60V - 0.014 Ü - 60A - D^PAK ’’SINGLE FEATURE SIZE ” POWER MOSFET PRELIMINARY DATA . . . . . . . . TYPE V dss R dS oii Id STB60NE06L-1 6 60 V <0.016 Q. 60 A TYPICAL Ros(on) =0.014 C2 A VALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: STP60NE06L-16 N - CHANNEL 60V - 0.014 £2 - 60A - D^PAK "SINGLE FEATURE SIZE ” POWER MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id S T P 60N E 06L-1 6 60 V < 0 . 0 1 6 Q. 60 A . . TYPICAL Ros(on) =0.014 £2 AVALANCE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED

IRLR230

Abstract: IRf 48 MOSFET LS40V
Contextual Info: IRLR230 A dvanced Power MOSFET FEATURES B V DSS — 2 0 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 7 .5 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area 0 .4 Î2 D-PAK ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 200V

Contextual Info: IRFR/U 234A A dvanced Power MOSFET FEATURES BVdss = 250 V ♦ Rugged Gate Oxide Technology ^DS on = 0 -4 5 ÌÌ ♦ Lower Input Capacitance lD ♦ Avalanche Rugged Technology 6.6 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V

Contextual Info: STB3015L STP3015L N - CHANNEL 30V - 0.013 i i - 40A - D^PAK/TO-220 _STripFET POWER MOSFET PRELIM IN ARY DATA TYPE V dss RDS on Id STB 3015L 30 V < 0.0155 a 40 A . TYPICAL RDS(on) = 0.013 . EXCEPTIONAL dv/dt CAPABILITY . LOW GATE CHARGE A 100°C