4TB203 Search Results

GD25D

Abstract: HM62W256LFP-8SLT HM62W256
Contextual Info: i HM 62W 256 S e rie s - 3.0 V & 3.3 V Supply 32,768-Word x 8-Bit Low Voltage Operation CMOS Static RAM Features Pin Description • Low voltage operation SRAM Single 3.3 V Supply • 0.8 jxm Hi-CMOS process • Highspeed Access time: 70/85 ns max

Contextual Info: HN62W448I Series 524288-word x 16-bit/1048576-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-770A Z Rev. 1.0 Apr. 24, 1997 Description The Hitachi HN62W448I series is a 8-Mbit CMOS mask-programmable ROM organized either as 524288word x 16-bit or 1048576-word x 8-bit. It has realized high speed normal access 120 ns on 3.3 V supply.

Contextual Info: HM62W16255H Series 262114-word x 16-bit High-Speed CMOS Static RAM HITACHI ADE-203-751 Z Preliminary Rev. 0.0 Feb. 27,1997 Description The HM62W16255H is an asynchronous high-speed static RAM, organized as 256-kword x 16 bits. It has realizes high-speed access time (10/12/15 ns) through the 0.35 |im CMOS process and high-speed circuit

HM628512 RAM

Abstract: HM628512LFP-10SL HM628S12-10 hm6285128 HM628512-5 M628512
Contextual Info: HM628512 Series 524288-word x 8-bit High Speed CMOS Static RAM The Hitachi HM628512 is a 4M-bit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.5 ^im Hi-CMOS process technology. The device, packaged in a

Contextual Info: HN58S65AI Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-670 Z Preliminary - Rev. 0.1 Mar. 13, 1997 Description The Hitachi HN58S65AI series is a electrically erasable and programmable ROM organized as 8192-word

Contextual Info: HN29VT800 Series, HN29VB800 Series 1048576-word X 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-781A Z Rev. 1.0 Apr. 25, 1997 Description The Hitachi HN29VT800 Series, HN29VB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS R ash Memory with DINOR (Divided bitline NOR) type memory cells, that realize programming and erase

Contextual Info: HM5164400A Series HM5165400A Series 16777216-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-490 A (Z) Preliminary Rev. 0.1 Jun. 3, 1996 Description The Hitachi HM5164400A Series, HM5165400A Series are CMOS dynamic RAMs organized as 16,777,216-word x 4-bit. They employ the most advanced CMOS technology for high performance

Contextual Info: HM5221605 Series 65,536-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-199A Z Rev. 1.0 Jun. 22, 1995 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5221605 is offered in 2 banks for improved performance.

HM65256BLP-10

Abstract: dp - 20t DG250 HM65256BFP-12T HM65256B HM65256BFP-10T HM65256BFP-15T HM65256BFP-20T HM65256BLFP-10T HM65256BLFP-12T
Contextual Info: HM65256B Series 5.0 V S u p p ly 32,768-w ord x 8-bit H ig h S p e e d P s u e d o S ta tic R A M Features • Single 5 V ±10% • Access time — CE access time: 100/120/150/200 ns — Address access time: 50/60/75/100 ns (in static column mode) • Cycle time

m5165

Abstract: 332S1
Contextual Info: HM5164165A Series HM5165165A Series 4194304-word x 16-bit Dynamic RAM HITACHI ADE-203-453 Z Preliminary - Rev. 0.4 Apr. 28, 1997 Description The Hitachi HM 5164165A Series, HM 5165165A Series are CMOS dynamic RAMs organized as 4,194,304-word x 16-bit. They employ the most advanced CMOS technology for high performance and

a19t

Abstract: ns 4203 hn62444p a19to D1423
Contextual Info: HN62444 Series 4M 256K X 16-bit and (512K x 8-bit) Mask ROM • DESCRIPTION The Hitachi HN62444 is a 4-Megabit CMOS Mask Programmable Read Only Memory organized as 262,144 x 16-bit and 524,288 x 8bit. The low power consumption of this device makes it ideal for

Contextual Info: HN58C256A Series HN58C257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-410C Z Rev. 3.0 May. 20,1997 Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word x 8-bit. They have realized high speed low power consumption and high reliability by