4T1 MARKING Search Results
4T1 MARKING Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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| ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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| MQ80C186-10/BYA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) |
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| 54121/BCA |
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54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) |
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| 54AC20/SDA-R |
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54AC20/SDA-R - Dual marked (M38510R75003SDA) |
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4T1 MARKING Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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LG Air Conditioning Repair
Abstract: AB01939 Hearing Aid repair 3750A 3797TC grain of wheat H6P3 1838 b hearing aid integrated circuits kraft plus
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0812-4210E 517-3748TC-1PC 3748TC LG Air Conditioning Repair AB01939 Hearing Aid repair 3750A 3797TC grain of wheat H6P3 1838 b hearing aid integrated circuits kraft plus | |
832-6522
Abstract: 832-6257 rc1 marking code 832021 832-9040 832-0393
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25-Up 832-6522 832-6257 rc1 marking code 832021 832-9040 832-0393 | |
103 transistor
Abstract: B1183 2SB1183F5 marking code SSs 2SD1759 transistor PNP 2sb transistor LB 122 transistor
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2SB1183F5 SC-63) B1183 2SD1759 2SB1183F5 001470a 001471G 2SB1183F5, 103 transistor marking code SSs transistor PNP 2sb transistor LB 122 transistor | |
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Contextual Info: SIEMENS BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking |
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900MHz Q62702-F1501 OT-343 | |
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Contextual Info: Central Sem iconductor Corp. CMPD4448 HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed |
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CMPD4448 CMPD4448 OT-23 25isec. 100mA | |
7510C
Abstract: THS-635W THS-620Y THS-620W HellermannTyton MIL-M-81531 TYHC34-66 615Y THS-610Y marking 3t1
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510C2 510M4 7510C 7510M4 IMP210C2 IMP210M4 7510C THS-635W THS-620Y THS-620W HellermannTyton MIL-M-81531 TYHC34-66 615Y THS-610Y marking 3t1 | |
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Contextual Info: ADVANCE MT28F800 512K x 16, 1 MEG x 8 FLASH MEMORY 512Kx16,1 MEGx8 FLASH MEMORY FEATURES • Eleven erase blocks: 16KB/8K-word boot block protected Two 8KB/4K-word parameter blocks Eight main memory blocks • Deep Power-Down Mode: 5jiA MAX • 5V ±10% V cc and Vpp |
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MT28F800 512Kx16 16KB/8K-word 100ns 288x16 100ns 00000H) 56-PIN 111S4T | |
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Contextual Info: 3 Diamond Grade Conspicuity Markings Series 983 Product Bulletin 983 June 2009 Description 3M™ Diamond Grade™ Conspicuity Markings Series 983 are highly retroreflective microprismatic markings designed to mark the sides and rear of vehicles for enhanced visibility and |
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35-3A-09 1-800-3MHELPS | |
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Contextual Info: Metallized Polyester Film Capacitors MKT Uncoated (Silver Caps) For ignition devices Versions with special dimensions can be supplied at short notice _ B 32 572 B 32 573 / * Construction • Dielectric: polyethylene terephthalate (polyester) • Stacked-film technology |
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A235b05 Vdc/16 235b05 | |
STZ8043
Abstract: STZ8200 STZ8043B zener 5c1 1n 53558 STZ8051
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STZ8000 OD-323 STZ8360A STZ8360B STZ8360C STZ8390 STZ8390A STZ8390B STZ8390C STZ8043 STZ8200 STZ8043B zener 5c1 1n 53558 STZ8051 | |
zener 2B1
Abstract: marking code ZENER zener 4a1 5c1 zener diode marking code 5b1 zener 5c1 marking 3t1 zener 5A1 STZ8039 5B1 zener diode
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STZ8000 OD-323 STZ8390C OD-323 zener 2B1 marking code ZENER zener 4a1 5c1 zener diode marking code 5b1 zener 5c1 marking 3t1 zener 5A1 STZ8039 5B1 zener diode | |
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Contextual Info: 3 Luminous Film 6900 Product Bulletin 6900 November 2008 Replaces PB 6900 dated July 2004 Description Compatible Products 3M Luminous Film 6900 is the high performance luminous film for safety and emergency exit signage. • Meets and exceeds ASTM E2072 and IMO |
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E2072 0225-05-S-08 1-800-3MHELPS | |
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Contextual Info: PD - 9.1357A International IOR Rectifier IRLZ24N PRELIMINARY HEXFET Power MOSFET • • • • • • Logic-Level G ate Drive A dvanced Process Technology Dynam ic dv/dt Rating 175°C O perating Tem perature Fast Switching Fully A valanche Rated V dss = 5 5 V |
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IRLZ24N 4A55452 | |
silicon npn planar rf transistor sot 143
Abstract: marking c8 transistor transistor K 2937 BFG10 small RF NPN POWER TRANSISTOR 2.5 GHZ C5 MARKING TRANSISTOR NPN planar RF transistor RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN N70 transistor
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BFG10; BFG10/X OT143 7110B2b OT143. 711Dfl2L silicon npn planar rf transistor sot 143 marking c8 transistor transistor K 2937 BFG10 small RF NPN POWER TRANSISTOR 2.5 GHZ C5 MARKING TRANSISTOR NPN planar RF transistor RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN N70 transistor | |
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zener 2B1
Abstract: 5c1 zener diode 3A1 zener diode 3A1 Zener zener 5A1 marking code 5b1 zener 4a1 zener 4c1 marking code ZENER marking 3t1
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STZ8000 OD-323 STZ8390C OD-323 zener 2B1 5c1 zener diode 3A1 zener diode 3A1 Zener zener 5A1 marking code 5b1 zener 4a1 zener 4c1 marking code ZENER marking 3t1 | |
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Contextual Info: SIEMENS CGY 181 GaAs MMIC Preliminary Data • • • • • Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V Overall power added efficiency 35 % Input matched to 50 Q, simple output match ESD: Electrostatic discharge sensitive device, |
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Q68000-A8883 fl235b05 | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Am plifier Transistor N-Channel MMBF4416LT1 M otorola Preferred Device 2 SOURCE 1 DRAIN MAXIMUM RATINGS Symbol Value Unit D ra in -S o u rc e Voltage VdS 30 V dc D ra in -G a te Voltage Vd G 30 V dc G a te -S o u rc e Voltage |
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MMBF4416LT1 236AB) | |
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Contextual Info: WS57C64F HIGH SPEED 8K x 8 CMOS EPROM KEY FEATURES • Fast Access Time • EPI Processing — 55 ns — Latch-Up Immunity Up to 200 mA • Low Power Consumption • DESC SMD No. 8510207 • Standard EPROM Pinout • Available in PLDCC GENERAL DESCRIPTION |
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WS57C64F WS57C64F WS57C64F-70CMB* MIL-STD-883C WS57C64F-70D WS57C64F-70DI WS57C64F-70DMB* WS57C64F-70J | |
displacement sensor strain gaugeContextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA 0 to 10 kPa 0 to 1.45 PSI Uncompensated, Silicon Pressure Sensors MPX10 MPX12 SERIES The MPX10 and MPX12 series device is a silicon piezoresistive pressure sensor providing a very accurate and linear voltage output — directly proportional to the applied |
OCR Scan |
MPX10 MPX12 371C-02 MPX10D MPX12D MPX10DP MPX12DP MPX10GP MPX12GP MPX10GVP displacement sensor strain gauge | |
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Contextual Info: S -204000 4M-bit MASK ROM The S-204000 is a high-speed, low-power 4,194,304-bit 524,288 words x 8 bits mask programmable ROM, that uses the C M O S process. Its completely static operation requires no clock. It is ideal for large-sized fixed memory of microcomputers or data terminal equipment. |
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S-204000 304-bit | |
reflective film
Abstract: scotchlite 8830
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0235-02-F-06 reflective film scotchlite 8830 | |
MLC850
Abstract: equivalent for transistor tt 2222 RF Power Transistor spice 2222 031 capacitor philips TT 2222 npn "RF Power Transistor" transistor tt 2222 NPN planar RF transistor NPN RF Amplifier RF POWER TRANSISTOR
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OCR Scan |
BFG11 BFG11/X OT143 BFG11 BFG11/X OT143. 711DflSb MLC850 equivalent for transistor tt 2222 RF Power Transistor spice 2222 031 capacitor philips TT 2222 npn "RF Power Transistor" transistor tt 2222 NPN planar RF transistor NPN RF Amplifier RF POWER TRANSISTOR | |
wiring diagram of o general window ac
Abstract: marking T79 DPDT 6 terminal window switch DR 25 specifications MLW3029 MLW3020
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MLW3022-F1C-1A MLW3022-F5C-2A b42fl77b wiring diagram of o general window ac marking T79 DPDT 6 terminal window switch DR 25 specifications MLW3029 MLW3020 | |
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Contextual Info: 3 Safety Products for Eye, Head and Face Protection 8043 page 1 of 5 Issue Date 03/01/04 Stylish eyewear that puts safety first. Introducing the new 3MTM Protective Eyewear 1750, 1751, 1752 and 1760. ! W NE 3MTM Safety Glasses 1752 The new 3M Protective Eyewear |
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1-800-3M 35-2W-70 | |