4S5S452 Search Results

ABE 027

Abstract: ely transformers IRFM460 IRFM460D IRFM460U N431 BBV 32 transistors
Contextual Info: Data Sheet No. PD-9.727A INTERNATIONAL RECTIFIER IQ R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM46Q N-CHANNEL 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors.

GE DIODE

Abstract: C769
Contextual Info: International [ragRectifier PD-9.961 B IRGKI050U06 "C H O P P E R " IGBT INT-A-PAK Ultra-fast Speed IGBT Low Side Switch o3 •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

Contextual Info: MASSES 001 4552 International E?R Rectifier PD-9.568A IRC640 HEXFET Power MOSFET • • • • • • S3T • IN R INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements

CPY203E

Abstract: IRFC9130
Contextual Info: INTE RN ATI ON AL RECTIFIER SbE D 4055450 001G4b3 1 Data Sheet No. PD-5.014B International Rectifier T - & - S L 1 HEXFET Power Module CPY200 Series Power H Bridges Product Summary Description/Features The CPY200 series of H EXFET power modules along with the IRFT003 are intended for use in driving subfractional horsepower DC motors and stepper motors,

Contextual Info: PD - 9.1325A International l R Rectifier IRL2505 PRELIMINARY HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated

Contextual Info: » * i International Rectifier P D -9.1231 IRFP450LC H E X FE T Pow er M O S F E T • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Cjgg, CoSS, C^ss Isolated Central Mounting Hole Dynamic dv/dt Rated

Contextual Info: PD-9.1002 international io r Rectifier IRFI744G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V qss - 4 5 0 V ^DS on = 0.63£2