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    4N0605

    Abstract: IPD90N06S4-05 PG-TO252-3-11 IPD90N04S6-05
    Contextual Info: IPD90N06S4-05 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 5.1 mΩ ID 90 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original     		ipd90n06s4-05pg-to252-3-11ipd90n04s6-054n0605 PDF

    4N0605

    Abstract: smd diode 106a 107 10V smd IPB80N06S4-05 IPI80N06S4-05 IPP80N06S4-05 PG-TO263-3-2 smd 106a smd diode marking DD 4N06
    Contextual Info: IPB80N06S4-05 IPI80N06S4-05, IPP80N06S4-05 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 5.4 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		ipb80n06s4-05ipi80n06s4-05ipp80n06s4-05pg-to263-3-2+8pg-to262-3-1pg-to220-3-14n0605smd diode 106a107 10v smdsmd 106asmd diode marking dd4n06 PDF