4MX4 DRAM SIMM Search Results

Contextual Info: 16MB 72 PIN FAST PAGE DRAM SIMM With 4Mx4 5VOLT TS4M3660QG Description Placement The TS4M3660QG is a 4M by 36-bit dynamic RAM module with 8pcs of 4Mx4 DRAMs and one 4Mx4 B QuadCAS DRAM assembled on the printed circuit board. C The TS4M3660QG is optimized for application to

Contextual Info: 16MB 72 PIN FAST PAGE DRAM SIMM With 4Mx4 5VOLT
TS4M3660Q

Description Features The TS4M3660Q is a 4M by 36-bit dynamic RAM module • 4,194,304-word by 36-bit organization. with 8pcs of 4Mx4 DRAMs and one 4Mx4 QuadCAS • Fast Page Mode operation. DRAM assembled on the printed circuit board.

Contextual Info: DRAM MODULE M53620812CW0/CB0 M53620812CW0/CB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53620812C

Contextual Info: DRAM MODULE M53620812DW0/DB0 M53620812DW0/DB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620812D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53620812D

Contextual Info: DRAM MODULE M53640812CW0/CB0 M53640812CW0/CB0 with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53640812C

c60 equivalent

Abstract: dram 4mx4 kmm5364
Contextual Info: DRAM MODULE M53620412CW0/CB0 M53620412CW0/CB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620412C

Contextual Info: DRAM MODULE M53620412DW0/DB0 M53620412DW0/DB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620412D is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620412D

64mb edo dram simm

Abstract: K4E160411C
Contextual Info: DRAM MODULE M53640412CW0/CB0 M53640412CW0/CB0 Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53640412C

Contextual Info: 16MB 72 PIN FPM DRAM SIMM With 4Mx4+4Mx1 5VOLT
TS4M3660G

Description The TS4M3660G is a 4M by 36-bit dynamic RAM Features module with 8pcs of 4Mx4 DRAMs and 4pcs of 4Mx1 • 4,194,304-word by 36-bit organization. DRAM assembled on the printed circuit board.

Contextual Info: 72PIN FAST PAGE SIMM 16MB With 4Mx4 60ns TS4M3660QG Description Features The TS4M3660QG is a 4M by 36-bit dynamic RAM module • Fast Page Mode operation. with 8pcs of 4Mx4 DRAMs and one 4Mx4 QuadCAS • Single +5.0V ± 10% power supply. DRAM assembled on the printed circuit board.

KMM5364005CSW

Abstract: KMM5364005CSWG
Contextual Info: DRAM MODULE KMM5364005CSW/CSWG 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5364005CSW/CSWG DRAM MODULE

4Mx4 dram simm

Abstract: 4MX36 4Mx4 2 CHIP dram simm 72 simm function 4Mx4 fpm dram 30 simm
Contextual Info: 4M x 36 Bit 5V FPM SIMM Fast Page Mode FPM DRAM SIMM 364006-S52m09JA 72 Pin 4Mx36 FPM SIMM Unbuffered, 2k Refresh, 5V Pin Assignment General Description The module is a 4Mx36 bit, 9 chip, 5V, 72 Pin SIMM module consisting of (8) 4Mx4 (SOJ) and (1) 4Mx4 (SOJ, Quad CAS) DRAM. The module is

Contextual Info: DRAM MODULE KMM5368003CSW/CSWG 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5368003CSW/CSWG DRAM MODULE

Contextual Info: DRAM MODULE KMM5368005CSW/CSWG 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5368005CSW/CSWG DRAM MODULE

Contextual Info: DRAM MODULE M53620805CY0/CT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53620805CY0/CT0-C DRAM MODULE

Contextual Info: DRAM MODULE M53620405CY0/CT0-C 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53620405CY0/CT0-C DRAM MODULE

Contextual Info: DRAM MODULE M53640405CY0/CT0-C 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53640405CY0/CT0-C DRAM MODULE

Contextual Info: DRAM MODULE M53640805CY0/CT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53640805CY0/CT0-C DRAM MODULE

Contextual Info: 16MB 72 PIN FAST PAGE DRAM SIMM With 4Mx4 5VOLT TS4M3260 Description Features The TS4M3260 is a 4M by 32-bit dynamic RAM module • Fast Page Mode Operation. with 8 pcs of 4Mx4 DRAMs assembled on the printed • Single +5.0V ± 10% power supply. circuit board.

we 510

Contextual Info: UG18M83602KBT-6AT 32M Bytes 8M x 36 DRAM 72Pin SIMM w/Parity based on 4M X 4 General Description Features The UG18M83602KBT-6AT is a 8,388,608 bits by 36 SIMM module. The UG18M83602KBT-6AT is assembled using 16 pcs of 4Mx4 2K refresh DRAMs 2 pcs of 4Mx4

Contextual Info: 16MB 72 PIN EDO DRAM SIMM With 4Mx4 5VOLT
TS4MED3260G

Description Features The TS4MED3260G is a 4M by 32-bit dynamic RAM • 4,194,304-word by 32-bit organization. module with 8 pcs of 4Mx4 DRAMs assembled on the • Fast Page Mode with Extended Data Out

Contextual Info: 32MB 72 PIN FAST PAGE DRAM SIMM With 4Mx4 5VOLT
TS8M3260

Description Features The TS8M3260 is a 4M by 32-bit dynamic RAM module • Fast Page Mode Operation. with 16 pcs of 4Mx4 DRAMs assembled on the printed • Single +5.0V ± 10% power supply. circuit board.

Contextual Info: Preliminary M53210400DW0/DB0 M53210410DW0/DB0 DRAM MODULE M53210400DW0/DB0 & M53210410DW0/DB0 Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321040 1 0D is a 4Mx32bits Dynamic RAM • Part Identification

KMM5364003BSW

Contextual Info: DRAM MODULE KMM5364003BSW/BSWG KMM5364003BSW/BSWG Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364003B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364003B