4M 300MIL Search Results

WE 251

Abstract: UG12M43602KBT UG12M43602KBG
Contextual Info: UG12M43602KBG T 16M Bytes (4M x 36) DRAM 72Pin SIMM based on 4M x 4 & 4M x 1 General Description Features The UG12M43602KBG(T) is a 4,149,304 bits by 36 SIMM module.The UG12M43602KBG(T) is assembled using 8 pcs of 4Mx4 2K refresh DRAMs 300mil Package and 4 pcs of 4Mx1

Contextual Info: STI644004G1-60LVG 144-PIN SO-DIMMS 4M X 64 Bits DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI644004G1-60LVG is a 4M x 64 bits Dynamic RAM high density memory module. The Simple Technology STI644004G1-60LVG consist of sixteen CMOS 4M

IBM01164004M

Abstract: IBM0116400B4M IBM0116400M IBM0116400P
Contextual Info: IBM01164004M x 412/10, 5.0V. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400B4M x 412/10, 3.3V. IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply

Contextual Info: 168-PIN DIMMS STI724107D1 -xxVG 4M X 72 Bit DRAM DIMM with EDO Mode and ECC Optimized FEATURES GENERAL DESCRIPTION • The Simple Technology STI724107D1-xxVG is a 4M x 72 bit Dynamic RAM high density memory module. The module consists of eighteen 4M x 4 bit DRAMs in a 24-pin 300-mil

IBM0116400B4M

Abstract: IBM01164004M IBM0116400M
Contextual Info: IBM01164004M x 412/10, 5.0V. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400B4M x 412/10, 3.3V. IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply

SM5408

Abstract: 4k2k
Contextual Info: SMRTD004 SM ART Modular Technologies QUICK REFERENCE G U ID E: WORKSTATION DRAM MODULES DENSITY ORG. REFSH. DRAMS 4M 16M DIMEN. LxHxT ' in. SMART PART NO.2 COMMENTS 2 0 0 PIN, 5 V , FAST PAGE MODE (FPM) 1 4 4 BIT I/O 64MB 64MB 4M X 144 4M X 144 4K 2K 32MB

IBM01164004M

Abstract: IBM0116400B4M IBM0116400M
Contextual Info: IBM01164004M x 412/10, 5.0V. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400B4M x 412/10, 3.3V. IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply

Contextual Info: Discontinued 9/98 - last order; 3/99 last ship IBM01164004M x 412/10, 5.0VMMDD31DSU-011010328. IBM0116400P 4M x 412/10, 3.3V, LP, SRMMDD31DSU-011010328. IBM0116400M 4M x 412/10, 5.0V, LP, SRMMDD31DSU-011010328. IBM0116400B4M x 412/10, 3.3VMMDD31DSU-011010328.

Contextual Info: UG9M43622 4 KBG(T) 16M Bytes (4M x 36) DRAM 72Pin SIMM based on 4M X 4 General Description Features The UG9M43622(4)KBG(T) is a 4,149,304 bits by 36 SIMM module.The UG9M436202(4)KBG(T) is assembled using 8 pcs of 4Mx4 2K/4K refresh DRAMs 300mil SOJ Package and 1 piece of 4Mx4

Contextual Info: UG9M43702 4 KBG(T) 16M Bytes (4M x 36) DRAM 72Pin SIMM w/ECC based on 4M X 4 General Description Features The UG9M43702(4)KBG(T) is a 4,149,304 bits by 36 SIMM module.The UG9M43702(4)KBG(T) is assembled using 9 pcs of 4Mx4 2K/4K refresh DRAMs 300mil SOJ Package mounted on 72 Pin

Contextual Info: UG9M43722 4 KBG(T) 16M Bytes (4M x 36) DRAM 72Pin SIMM w/ECC based on 4M X 4 General Description Features The UG9M43722(4)KBG(T) is a 4,149,304 bits by 36 SIMM module.The UG9M43722(4)KBG(T) is assembled using 9 pcs of 4Mx4 2K/4K refresh DRAMs 300mil SOJ Package mounted on 72 Pin

4m dram 72-pin simm 32

Contextual Info: UG9M43602 4 KBG(T) 16M Bytes (4M x 36) DRAM 72Pin SIMM based on 4M X 4 General Description Features The UG9M43602(4)KBG(T) is a 4,149,304 bits by 36 SIMM module.The UG9M43602(4)KBG(T) is assembled using 8 pcs of 4Mx4 2K/4K refresh DRAMs 300mil SOJ Package and 1 piece of 4Mx4

Contextual Info: UG54E642 4 4GJ(T)G 32M Bytes (4M x 64) DRAM 168Pin DIMM based on 4M x 4 General Description Features The UG54E642(4)4GJ(T)G is a 4,149,304 bits by 64 EDO DRAM module. The UG54E642(4)4GJ(T)G is assembled using 16 pcs of 4Mx4 2K/4K refresh DRAMs in 300mil SOJ

edo dram 50ns 72-pin simm

Contextual Info: UG10M44022 4 KBG(T) 16M Bytes (4M x 40) DRAM 72Pin SIMM w/ECC based on 4M X 4 General Description Features The UG10M44022(4)KBG(T) is a 4,149,304 bits by 40 SIMM module.The UG10M44022(4)KBG(T) is assembled using 10 pcs of 4Mx4 2K/4K refresh DRAMs 300mil SOJ Package mounted on 72 Pin

"24 pin" DRAM

Contextual Info: UG9M43622 4 KBJ(N) 16M Bytes (4M x 36) DRAM 72Pin SIMM w/Parity based on 4M X 4 General Description Features The UG9M43622(4)KBJ(N) is a 4,149,304 bits by 36 SIMM module.The UG9M43622(4)KBJ(N) is assembled using 8 pcs of 4Mx4 2K/4K refresh DRAMs 300mil SOJ Package and 1 piece of 4Mx4

DRAM72PIN

Contextual Info: UG9M43602 4 KBJ(N) 16M Bytes (4M x 36) DRAM 72Pin SIMM based on 4M X 4 General Description Features The UG9M43602(4)KBJ(N) is a 4,149,304 bits by 36 SIMM module.The UG9M43602(4)KBJ(N) is assembled using 8 pcs of 4Mx4 2K/4K refresh DRAMs 300mil SOJ Package and 1 piece of 4Mx4

Contextual Info: KMM372F400BK/BS KMM372F41OBK/BS DRAM MODULE KMM372F400BK/BS / KMM372F41 OBK/BS Fast Page with EDO Mode 4M X 72 DRAM DIMM with ECC using 4Mx4, 4K/2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F40 1 0B is a 4M x72bits Dynamic • Part Identification

A42U2604

Abstract: A42U2604S A42U2604S-50 A42U2604S-60 A42U2604S-80 A42U2604V A42U2604V-50 A42U2604V-60
Contextual Info: A42U2604 Series Preliminary 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE Document Title 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History Rev. No. 0.0 Preliminary History Issue Date Remark Initial issue June 13, 2001 Preliminary June, 2001, Version 0.0

44C4104

Contextual Info: KMM5324004CK/CKG KMM5324104CK/CKG DRAM MODULE KMM5324004CK/CKG & KMM5324104CK/CKG Fast Page Mode with EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Sam sung KMM53240 1 04CK is a 4M x32bits RAM high density memory

Contextual Info: UG54W662 4 4GJ(T)G 32M Bytes (4M x 64) DRAM 168Pin DIMM based on 4M x 4 General Description Features The UG54W662(4)4GJ(T)G is a 4,194,304 bits by 64 EDO DRAM module. The UG54W662(4)4GJ(T)G is assembled using 16 pcs of 4Mx4 DRAMs in a 300mil SOJ/TSOP package,and one 2k EEPROM for SPD in

A42U2604

Abstract: A42U2604S A42U2604S-50 A42U2604S-60 A42U2604V A42U2604V-50 A42U2604V-50U A42U2604V-60
Contextual Info: A42U2604 Series 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE Document Title 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History History Issue Date Remark 0.0 Initial issue June 13, 2001 Preliminary 0.1 Modify symbol HE dimensions in TSOP 24L package information

Contextual Info: A42U2604 Series 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE Document Title 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History History Issue Date Remark 0.0 Initial issue June 13, 2001 Preliminary 0.1 Modify symbol HE dimensions in TSOP 24L package information

Contextual Info: UG54W662 4 4GJ(T)G 32M Bytes (4M x 64) DRAM 168Pin DIMM based on 4M x 4 General Description Features The UG54W662(4)4GJ(T)G is a 4,194,304 bits by 64 EDO DRAM module. The UG54W662(4)4GJ(T)G is assembled using 16 pcs of 4Mx4 DRAMs in a 300mil SOJ/TSOP package,and one 2k EEPROM for SPD in

A42L2604

Abstract: A42L2604S-45 A42L2604S-50 A42L2604V-45 A42L2604V-45U A42L2604V-50 ATA56
Contextual Info: A42L2604 Series 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE Document Title 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History History Issue Date Remark 0.0 Initial issue June 13, 2001 Preliminary 0.1 Modify symbol HE dimensions in TSOP 24L package information