4K X 4 RAM Search Results

CY7C128A 16k sram

Abstract: CY7C128A SRAM CY7C128A CY7C167A CY7C168A CY7C169A CY7C170A CY7C171A CY7C172A EME-6300H
Contextual Info: Qualification Report June, 1994, QTP# 91423/93201 Version 1.1 16K Chop Redesign MARKETING PART NUMBER DEVICE DESCRIPTION CY7C128A 2K x 8 Static R/W RAM CY7C167A 16K x 1 Static R/W RAM CY7C168A 4K x 4 Static RAM CY7C169A 4K x 4 Static RAM CY7C170A 4K x 4 Static RAM

RJ-017

Abstract: rj017
Contextual Info: 4K x 36 BiCMOS DUAL-PORT STATIC RAM MODULE IDT7M1014 Integrated Device Technology, Inc. FEATURES DESCRIPTION • The IDT7M1014 is a 4K x 36 asynchronous high-speed BiCMOS Dual-Port static RAM module constructed on a co­ fired ceramic substrate using 4 IDT7014 4K x 9 asynchro­

Contextual Info: 4K x 36 BiCMOS DUAL-PORT STATIC RAM MODULE IDT7M1014 Integrated Device Technology, Inc. FEATURES DESCRIPTION • The IDT7M1014 is a 4K x 36 asynchronous high-speed BiCMOS Dual-Port static RAM module constructed on a co­ fired ceramic substrate using 4 IDT7014 4K x 9 asynchro­

Contextual Info: 4K x 36 BiCMOS DUAL-PORT STATIC RAM MODULE PRELIMINARY IDT7M1014 Integrated Device Technology, Inc. FEATURES DESCRIPTION • The IDT7M1014 is a 4K x 36 asynchronous high speed BiCMOS Dual-Pori static RAM module constructed on a co­ fired ceramic substrate using 4 IDT7014 4K x 9 asynchro­

CY7C128A SRAM

Abstract: 256K x 8 SRAM CY7C128A SRAM CY7C128A CY7C167A CY7C168A CY7C169A CY7C170A CY7C171A CY7C172A EME-6300H
Contextual Info: Qualification Report December, 1994, QTP# 94065 Version 1.0 16K SRAM, 7% SHRINK, R21 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C128A 2K x 8 Static R/W RAM CY7C167A 16K x 1 Static R/W RAM CY7C168A 4K x 4 Static RAM CY7C169A 4K x 4 Static RAM CY7C170A

LL014

Contextual Info: 4K x 36 BiCMOS DUAL-PORT STATIC RAM MODULE IDT7M1014 Integrated Device Technology, Inc. FEATURES DESCRIPTION • The ID T 7 M 1 0 1 4 is a 4K x 36 asynchronous high-speed B iC M O S D ual-Port static RA M m odule constructed on a co­ fired ceram ic substrate using 4 ID T 7 0 1 4 4K x 9 asynchro­

Contextual Info: HB56EW472ETC-A Series, HB56EW872ETK-A Series 32/64MB Buffered EDO DRAM DIMM 4-Mword X 72-bit, 4k Refresh, 1 Bank Module 4 pcs of 4M X 16 & 2 pcs of 4M x 4 components 8-Mword x 72-bit, 4k Refresh, 2 Bank Module (8 pcs of 4M x 16 & 4 pcs of 4M x 4 components)

CAPACITOR 64 680 4J

Abstract: 11DQ12 8dq9 Nippon capacitors
Contextual Info: HB56EW472ETC-A Series, HB56EW872ETK-A Series 32/64MB Buffered EDO DRAM DIMM 4-Mword X 72-bit, 4k Refresh, 1 Bank Module 4 pcs of 4M X 16 & 2 pcs of 4M X 4 components 8-Mword X 72-bit, 4k Refresh, 2 Bank Module (8 pcs of 4M X 16 & 4 pcs of 4M x 4 components)

KDS 4.000 Crystal

Contextual Info: SH67P53/K53 OTP/Mask 4-Bit micro-controller with LCD Driver Features „ SH6610C-Based Single-Chip 4-Bit Micro-controller with LCD Driver „ OTP ROM: 4K X 16 bits SH67P53 „ MASK ROM: 4K X 16 bits (SH67K53) „ RAM: 196 X 4bits - 32 System Control Register

Contextual Info: LOGIC DEVICES INC EbE D • SShSTDS GGG1GG2 1 ■ _ _ T - 4 ¿ -2 3 -0 S ' 4K x 4 Static RAM FEATURES □ 4K x 4 Static RAM with Separate I /O , Transparent W rite L7C171 , or H igh Impedance Write (L7C172) □ Auto-Powerdown Design

Contextual Info: 4K x 4 CMOS Cache-Tag Static RAM FEATURES_ DESCRIPTION _ □ 4K x 4 CMOS Static RAM with 4-bit Tag Comparison Logic □ High Speed Address-to-MATCH — 10 ns maximum □ Totem Pole L7C180 or Open Drain (L7C181) MATCH Output □ High Speed Hash Gear

Contextual Info: SH69P48A OTP 4K 4-bit Micro-controller with 10-bit SAR A/D Converter Features SH6610D-based single-chip 4-bit micro-controller with 10-bit SAR A/D converter OTPROM: 4K X 16bits RAM: 253 X 4bits - 61 System control registers - 192 Data memory Operation voltage:

IDT6178S

Abstract: 6178S12
Contextual Info: IDT6178S CMOS StaticRAM 16K 4K x 4-BIT CACHE-TAG RAM MILITARY AND COMMERCIAL TEMPERATURE RANGE IDT6178S CMOS StaticRAM 16K (4K x 4-BIT) CACHE-TAG RAM Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed Address to MATCH Valid time – Military: 12/15/20/25ns

2102 Static RAM

Abstract: L7C161PC
Contextual Info: LOGIC DEVICES INC 2bE D • SSbSTGS 00G107S G ■ -0 ? 4K x 4 CMOS Cache-Tag Static RAM FEATURES □ 4K x 4 CMOS Static RAM with 4-bit Tag Comparison Logic □ High Speed Address-to-MATCH — 10 ns maximum □ Totem Pole L7C180 or Open Drain (L7C181) MATCH Output

IDT71586

Contextual Info: CMOS STATIC RAM 6 4 K 4 K x 16-BIT LATCHED CacheRAM IDT 71586 FEATURES: DESCRIPTION: • Wide 4K x 16 Organization The IDT71586 is a fast 4K x 16 latched address CMOS static RAM designed to enhance cache memory designs. This device of­ fers improved circuit board densities overdesigns using traditional

ssl4180

Contextual Info: 4K x 4 CMOS Cache-Tag Static RAM FEATURES_ □ 4K x 4 CMOS Static RAM with 4-bit Tag Comparison Logic □ High Speed Address-to-MATCH — 10 ns maximum □ Totem Pole L7C180 or Open Drain (L7C181) MATCH Output □ High Speed Flash Clear □ Auto-Powerdown Design

IMS1420M

Abstract: 1AV Series
Contextual Info: IMS1423M CMOS High Performance 4K x 4 Static RAM MIL-STD-883C FEATURES DESCRIPTION • INM O S1Very High Speed CM OS • Advanced Process - 1.6 Micron Design Rules • Specifications guaranteed over full military temperature range -55° C to + 125° C • 4K x 4 Bit Organization

Contextual Info: 4K x 4 Static RAM FEATURES □ 4K x 4 Static RAM with Common I/O, Output Enable L7C170 only □ Auto-Powerdown Design Q Advanced CMOS Technology □ Highspeed — to 8 ns maximum □ Low Power Operation Active: 190 mW typical at 35 ns Standby: 100 p.W typical

pin function of ic 7493

Abstract: om 8383
Contextual Info: IMS1423 High Performance 4K x 4 CMOS Static RAM m o s FEATURES DESCRIPTION • • • • • • • • • • • • The INMOS IMS1423 is a high performance 4K x 4 CMOS static RAM. The IMS1423 provides maximum density and speed enhancements with the additional

Contextual Info: SH69P48A OTP 4K 4-bit Micro-controller with 10-bit SAR A/D Converter Features „ SH6610D-based single-chip 4-bit micro-controller with 10-bit SAR A/D converter „ OTPROM: 4K X 16bits „ RAM: 253 X 4bits - 61 System control registers - 192 Data memory „ Operation voltage:

Contextual Info: L 7 C 171/172 4K x 4 Static RAM DESCRIPTION FEATURES □ 4K x 4 Static RAM with Separate I/O , Transparent Write L7C171 , or High Impedance Write (L7C172) □ Auto-Powerdown Design □ Advanced CMOS Technology □ Highspeed — to 8 ns maximum □ Low Power Operation

Contextual Info: MK41 H80 N -20/22/25/35 SGS-THOMSON 4K x 4 CMOS TAG RAM 4K x 4 SRAM WITH ONBOARD 4 BIT COMPA­ RATOR 20,22,25, AND 35ns ADDRESS TO COMPARE ACCESS TIME EQUAL ACCESS, READ AND WRITE CYCLE TIMES FLASH CLEAR FUNCTION 22-PIN, 300 MIL PLASTIC N D IP -2 2 (Plastic Package)

Contextual Info: 4K x 4 CMOS Cache-Tag Static RAM DESCRIPTION FEATURES □ 4K x 4 CMOS Static RAM with 4-bit Tag Com parison Logic □ High Speed Address-to-M A TCH — 10 ns m axim um □ Totem Pole L7C 180 or Open Drain (L7C 181) M ATCH O utput □ High Speed Flash Clear

IMS1423P-35

Abstract: IMS1423P-45 elmos 347
Contextual Info: IMS1423 High Performance 4K x 4 CMOS Static RAM DDUTTOS* F EA T U R E S DESCRIPTION • INMOS'Very High Speed CMOS • Advanced Process -1.6 Micron Design Rules • 4K x 4 Bit Organization • 25,35,45 and 55 nsec Access Times • Fully TTL Compatible • Common Data Input & Output