4K X 4 RAM Search Results

RJ-017

Abstract: rj017
Contextual Info: 4K x 36 BiCMOS DUAL-PORT STATIC RAM MODULE IDT7M1014 Integrated Device Technology, Inc. FEATURES DESCRIPTION • The IDT7M1014 is a 4K x 36 asynchronous high-speed BiCMOS Dual-Port static RAM module constructed on a co­ fired ceramic substrate using 4 IDT7014 4K x 9 asynchro­

Contextual Info: 4K x 36 BiCMOS DUAL-PORT STATIC RAM MODULE IDT7M1014 Integrated Device Technology, Inc. FEATURES DESCRIPTION • The IDT7M1014 is a 4K x 36 asynchronous high-speed BiCMOS Dual-Port static RAM module constructed on a co­ fired ceramic substrate using 4 IDT7014 4K x 9 asynchro­

Contextual Info: 4K x 36 BiCMOS DUAL-PORT STATIC RAM MODULE PRELIMINARY IDT7M1014 Integrated Device Technology, Inc. FEATURES DESCRIPTION • The IDT7M1014 is a 4K x 36 asynchronous high speed BiCMOS Dual-Pori static RAM module constructed on a co­ fired ceramic substrate using 4 IDT7014 4K x 9 asynchro­

Contextual Info: HB56EW472ETC-A Series, HB56EW872ETK-A Series 32/64MB Buffered EDO DRAM DIMM 4-Mword X 72-bit, 4k Refresh, 1 Bank Module 4 pcs of 4M X 16 & 2 pcs of 4M x 4 components 8-Mword x 72-bit, 4k Refresh, 2 Bank Module (8 pcs of 4M x 16 & 4 pcs of 4M x 4 components)

CAPACITOR 64 680 4J

Abstract: 11DQ12 8dq9 Nippon capacitors
Contextual Info: HB56EW472ETC-A Series, HB56EW872ETK-A Series 32/64MB Buffered EDO DRAM DIMM 4-Mword X 72-bit, 4k Refresh, 1 Bank Module 4 pcs of 4M X 16 & 2 pcs of 4M X 4 components 8-Mword X 72-bit, 4k Refresh, 2 Bank Module (8 pcs of 4M X 16 & 4 pcs of 4M x 4 components)

Contextual Info: LOGIC DEVICES INC EbE D • SShSTDS GGG1GG2 1 ■ _ _ T - 4 ¿ -2 3 -0 S ' 4K x 4 Static RAM FEATURES □ 4K x 4 Static RAM with Separate I /O , Transparent W rite L7C171 , or H igh Impedance Write (L7C172) □ Auto-Powerdown Design

Contextual Info: 4K x 4 CMOS Cache-Tag Static RAM FEATURES_ DESCRIPTION _ □ 4K x 4 CMOS Static RAM with 4-bit Tag Comparison Logic □ High Speed Address-to-MATCH — 10 ns maximum □ Totem Pole L7C180 or Open Drain (L7C181) MATCH Output □ High Speed Hash Gear

IDT71586

Contextual Info: CMOS STATIC RAM 6 4 K 4 K x 16-BIT LATCHED CacheRAM IDT 71586 FEATURES: DESCRIPTION: • Wide 4K x 16 Organization The IDT71586 is a fast 4K x 16 latched address CMOS static RAM designed to enhance cache memory designs. This device of­ fers improved circuit board densities overdesigns using traditional

Contextual Info: L 7 C 171/172 4K x 4 Static RAM DESCRIPTION FEATURES □ 4K x 4 Static RAM with Separate I/O , Transparent Write L7C171 , or High Impedance Write (L7C172) □ Auto-Powerdown Design □ Advanced CMOS Technology □ Highspeed — to 8 ns maximum □ Low Power Operation

Contextual Info: CMOS STATIC RAM 16K 4K x 4-BIT CACHE-TAG RAM advance INF0? I(^ I DT 6 17 8S FEATURES: DESCRIPTION: • High-speed address access time The IDT6178 is a high-speed cache address comparator sub­ system consisting of a 16,384-bit static RAM organized as 4K x 4.

Contextual Info: L7C168/170 4K x 4 Static RAM FEATURES □ 4K x 4 Static RAM with Common I/O , Output Enable L7C170 only □ Auto-Powerdown Design Q Advanced CMOS Technology □ Highspeed — to 8 ns maximum □ Low Power Operation Active: 190 mW typical at 35 ns Standby: 100 p.W typical

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Abstract: .xnxx
Contextual Info: INTEGRATE D EV ICE - b6E » • 4Ô2S771 0014423 7bfi « I D T . IS%V\ ® 4K x 36 BiCMOS PRELIMINARY IDT7M1024 SYNCHRONOUS DUAL-PORT y STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: • High-density 4K x 36 Synchronous Dual-Port SRAM

Contextual Info: 4K x 4 Static RAM L 7C 171/172 Features Description_ □ 4K by 4 Static RAM with separate I/O , transparent write L7C171 , or high impedance write (L7C172) The L7C171 and L7C172 are highperformance, low-power CMOS static RAMs. The storage cells are organ­

Contextual Info: ATT7C180 ATT7C181 High-Speed CMOS SRAM 16 Kbits 4K X 4 Cache-Tag Features • 4K by 4-bit static RAM with 4-bit tag comparison logic ■ Totem-pole (ATT7C180) or open-drain (ATT7C181) MATCH output ■ Automatic powerdown during long cycles ■ Data retention at 2 V for battery backup

Contextual Info: L 7 C 16 8 / 1 7 0 4K x 4 Static RAM Features Description □ 4K by 4 Static RAM with common I/O , output enable L7C170 only The L7C168 and L7C170 are highperformance, low-power CMOS static RAMs. The storage cells are organ­ ized as 4096 words by 4 bits per word.

Contextual Info: LO GI C D E V I C E S INC EbE D • S S b S iO S O Q O C H T t - a ' B _ 4K x 4 Static RAM FEATURES □ 4K x 4 Static RAM with Common I/O, Output Enable L7C170 only □ Auto-Powerdown Design Q Advanced CMOS Technology □ Highspeed — to 8 ns maximum

SH67P54

Contextual Info: SH67P54 OTP 4-Bit Micro-controller with LCD Driver Features „ SH6610D-Based Single-Chip 4-Bit Micro-controller „ OTPROM: 4K X 16 bits „ RAM: 384 X 4bits - System Register: 48 X 4 bits - Data RAM: 336 X 4 bits „ Operation Voltage: System Oscillator = 300kHz - 4MHz, VDD = 2.4V - 6.0V

tip off 0401 transistor circuit 220 v free power

Abstract: E21B 0MSI 300 bd c6500 SDS st2 LC6500 LC6554D BCTF LC6554 lc6554h
Contextual Info: Ordering num ber:EN 2156B F SANYO i No. 2156 B CMOS LSI LC6554D,6554H 4K-Byte ROM-Contained Single-Chip 4-Bit Microcomputers with FLT, LED Drivers r/ /V X . V .;,. "'V. / igis The LC6554D/H are single-chip 4-bit microcomputers that contain a 4K-byte ROM, 1K-hit RAMifpnd havfe 64 pins.

4-Bit Microcontrollers

Abstract: 20X4 LCD instruction table 47c241 QFP44 sop16 pwm KMP47C400BN KMP47C203N KLCS-47E SDIP28 SSOP30
Contextual Info: 4-bit Microcontrollers • KLCS-47E, 47, 470, 470A Series ■ Features 47E Series Maximum ROM size Maximum RAM size Minimum instruction execution time Number of instructions Number of interrupts Packages 256 x 4 47 Series 4K x 8 768 x 4 1 .Ojus at 8Mb, VDd=2.7V~5.5V

Contextual Info: UN 5 1991 AT&T Preliminary Data Sheet Microelectronics ATT7C171 A TT7C 172 High-Speed CMOS SRAM 16 Kbit 4K x 4 , Separate I/O F ea tu res Data retention at 2 V for battery backup operation • 4K by 4-bit static RAM with separate I/O and transparent write (ATT7C171) or high-impedance

Contextual Info: CY101E484 CY10E484 CY100E484 CYPRESS SEMICONDUCTOR Features • Open emitter output for ease of memory expansion • 4096 x 4-bit organization • 4K x 4 ECL Static RAM • Industry-standard pinout Ultra high speed/standard power — t AA = 4, 5 ns Functional Description

Contextual Info: INTEGRATED DEVICE 3Ô E D • 14Ö2S771 G 0 0 b b 7 cî 0 ■ _ IDT ~T- % - 2 3 -12, PRELIMINARY IDT7134SA IDT7134LA CMOS DUAL-PORT RAM 32K 4K x 8-BIT Integrated Device Technology! Inc. FEATURES: DESCRIPTION: • T h e ID T 7 1 3 4 is an extremely high-speed 4K x 8 dual-port

Contextual Info: HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) IDT70824S/L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • T h e ID T 7 082 4 is a high-speed 4K x 16-bit Sequential Access Random Access M em ory (S A R A M ). T h e SA RA M

Nippon capacitors

Contextual Info: HB56HW465DB-5/5L/6/6L 32MB EDO DRAM S.O.DIMM 4-Mword x 64-bit, 4k refresh, 1 Bank Module 4 pcs of 4M x 16 components HITACHI ADE-203-861 (Z) Preliminary, Rev. 0.0 Nov. 10, 1997 Description The HB56HW465DB is a 4 M x 64 Dynamic RAM Small Outline Dual In-line Memory Module (S. O.