4K PROM Search Results

cy7c9101

Abstract: CY2901 CY7C190 PLD20RA10 CY2149 CY7C122 CY7C148 CY7C149 CY7C150 22V10-Macrocell
Contextual Info: Military Product Selector Guide Static RAMs Size Organization 64 64 1K 1K 4K 4K 4K 4K 4K 8K 8K 16K 16K 16K 16K 16K 16K 16K 16K 16K 32K 32K 32K 32K 32K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 256K 256K 256K 256K 256K 256K 256K 1M 1M

eeprom 2416

Abstract: 512 x 8 static ram 52004HR 1N3064 52004I ncr 400 NCR Microelectronics Division
Contextual Info: 52004 4K BIT 512 x 8 NVRAM 4K Bit Static RAM backed by 4K Bit Electrically Erasable PROM Unlimited Recall Cycles Memory Margining Capability Fully 5V Only Operation In Circuit EEPROM Changes SRAM Cycle Time less than 300 ns M E M O R IE S Operating ranges

TMP47P440AN

Abstract: TMP47C400BN TMP47P421AF TMP47C212AN TMP47C421AF TMP47P446VF TMP47C433AN TMP47C200BN TMP47P410AN qfp-44
Contextual Info: TLCS-47 Series CMOS Type Function TMP47C200BN/BF TMP47C400BN/BF X44 RAM I/O Port Mm. Instruction Supply ROM Execution Time Voltage Package (byte) (nibble} (bit) (MS) (V) 2K 128 4K 256 2K 128 4K 256 2K 128 4K 256 Standard (LED driver) TMP47C460AN/AF 2.7-6.0

Contextual Info: & 28C04A Microchip 4K 512 x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum The Microchip Technology Inc 28C04A is a CMOS 4K • CMOS Technology for Low Power Dissipation non-volatile electrically Erasable and Programmable

Contextual Info: COP8TAB9,COP8TAC9 COP8TAB9/TAC9 8-Bit CMOS Flash Microcontroller with 2k Byte or 4k Byte Memory Literature Number: SNOSA25E COP8TAB9/TAC9 8-Bit CMOS Flash Microcontroller with 2k Byte or 4k Byte Memory 1.0 General Description The COP8TAB9/TAC9 Flash microcontrollers are highly integrated COP8 Feature core devices, with 2k or 4k Flash

Contextual Info: 24C04A & Microchip 4K 512 x 8 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION Low power CMOS technology The Microchip Technology Inc. 24C04A is a 4K bit Organized as two blocks of 256 bytes (2 x 256 x 8) Hardware write protect for upper block

Y221

Contextual Info: M ic r o c h ip 93LCS56/66 2K/4K 2.5V CMOS Serial EEPROM with Software Wire Protect FEATURES DESCRIPTION The Microchip Technology Inc. 93LCS56/66 are low voltage Serial Electrically Erasable PROMs with memory capacities of 2K bits/4K bits respectively. A write protect

Contextual Info: & 93LC66 Microchip 4K CMOS Serial Electrically Erasable PROM DESCRIPTION FEATURES The Microchip Technology Inc. 93LC66 is a 4K bit low voltage serial Electrically Erasable PROM. The device memory is configured as 512 x 8 or 256 x 16 bits depending on the ORG pin setup. Advanced CMOS

TDA 1111 sp

Abstract: Z8603 Z8601 2732 eprom interfacing the 2732 eprom TDA 1100 sp IR RECEIVER 8601 Z8611 Z8613 Z8681
Contextual Info: Z 8 6 0 1 /Z 8 6 0 3 Z 8 6 1 1 /Z 8 6 1 3 Z 8 Z8601 Single-Chip MCU with 2K ROM Z8603 Prototyping Device with 2K EPROM Interface Z8611 Single-Chip MCU with 4K ROM Z8613 Prototyping Device with 4K EPROM Interface Features General Description Complete microcomputer, 2K 8601 or 4K

Contextual Info: CAT33C104 Preliminary CAT33C104 3 Voit OPERATION 4K BIT SERIAL E2 PROM DESCRIPTION FEATURES The CAT33C104 is a 3V CMOS 4K-bit serial E2PROM with a low current drain of 2mA write , 0.5mA (read) in the active mode and 50|iA standby. Its configuration is user selectable as either 256

Contextual Info: MICROCHIP TECHNOLOGY INC 22E D bl032Dl G G G 4 b n b " P /W 3 '2 .7 85C92 Microchip 4K 5X2 x 8 CMOS Serial Electrically Erasable PROM DESCRIPTION FEATURES The Microchip Technology Inc. 85C92 is a 4K bit Elec­ trically Erasable PROM. The device is organized as two

Contextual Info: PRELIMINARY KM93C57V/KM93C67V CMOS EEPROM 2 K /4K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Enhanced exte n d e d o p erating voltage: 2 . 0 V - 4.5V • Low po w er c onsum ption The KM93C57V/67V is a extended voltage 2K/4K b its

Datasheet of 7033 ic

Abstract: X25057 7033 of 7033 ic aaf mark T0212
Contextual Info: ICmic TM This X25057 device has been acquired by IC MICROSYSTEMS from Xicor, Inc. IC MICROSYSTEMS X25057 4K 512 x 8 Bit 5MHz Low Power SPI Serial E2PROM with IDLock Memory FEATURES DESCRIPTION •5MHz Clock Rate •IDLock™ Memory The X25057 is a CMOS 4K-bit serial E PROM, internally

MICROCHIP - 93C66

Abstract: 93c66 6 93c66 93C66S 93C66SE f 93c66
Contextual Info: & 93C66 Microchip 4K CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • • • • • • • • • • • • • The Microchip Technology Inc. 93C66 is a 4K bit serial Electrically Erasable PROM. The device memory is configured as 512 x 8 or 256 x 16 bits depending on the

bipolar PROM

Contextual Info: WS57C43C MILITARY HIGH SPED 4K x 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with 4K x 8 Bipolar PROMs • Immune to Latch-UP • Ultra-Fast Access Time — *ACC = 3 5 ns — t cs = 20 ns — Up to 200 mA • Low Power Consumption • Fast Programming

MICROCHIP - 93C66

Contextual Info: 93C66 Microchip 4K CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • • • • • • • • • • • • • The Microchip Technology Inc. 93C66 is a 4K bit serial Electrically Erasable PROM. The device memory is configured as 512 x 8 or 256 x 16 bits depending on the

sp5010

Abstract: 24LC 24LC08B 24LC04B
Contextual Info: 24LC04B/08B Microchip 4K and 8K CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • Single supply with operation down to 2.5 volts The Microchip Technology Inc. 24LC04B/08B is a 4K- or 8K-bit Electronically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory

Contextual Info: 24C04A Microchip 4K 512 x 8 CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION Low power CMOS technology The Microchip Technology Inc. 24C04A is a 4K bit Organized as two blocks of 256 bytes (2 x 256 x 8) Hardware write protect for upper block Electrically Erasable PROM. The device is organized as

smd A9

Abstract: SMD 6 PIN A4 marking smd 5 pin marking a9 SMD T1 IS 5 Pin Bipolar PROM programming smd marking a7 smd a10 ws57c43 smd a7 smd diode A4
Contextual Info: WS57C43C MILITARY HIGH SPED 4K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with 4K x 8 Bipolar PROMs • Immune to Latch-UP — t ACC = 35 ns — t CS = 20 ns — Up to 200 mA • Low Power Consumption • Fast Programming

Contextual Info: WS57C43C MILITARY HIGH SPED 4K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with 4K x 8 Bipolar PROMs • Immune to Latch-UP — t ACC = 35 ns — t CS = 20 ns — Up to 200 mA • Low Power Consumption • Fast Programming

MOSTEK 36000

Abstract: 3861 mostek MK2408P MK2500P
Contextual Info: CONTENTS I. Functional/Numerical Index II. Shift Registers III. Read Only Memories 16K ROMs 32K ROMs 64K ROMs Programmable ROMs Random Access Memories 4K Dynamic RAMs 16K Dynamic RAMs 4K Static RAMs IV. V. Application Information VI. Packaging VII. Reliability Information

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information TT 570 N 08.14 screwing depth max. 18,0 M10 4K 5G 7K 6G plug A 2,8 x 0,8 3 A 31 50 2 1 K AK 7K 44 6G 4K 5G TT 3 1 3 A 2 1 K AK 4K 2 25 112 6 144 100 124 5G TD 1 DT 1) 25 3 A 2 1 K AK

KK24LC04

Abstract: KK24LC08
Contextual Info: TECHNICAL DATA KK24LC04/08 4K/8K 2.5V CMOS Serial EEPROMs DESCRIPTION KK24LC04/08 is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x 8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and

Contextual Info: WS57C43C MILITARY HIGH SPED 4K x 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with 4K x 8 Bipolar PROMs • Immune to Latch-UP • Ultra-Fast Access Time — l ACC = 3 5 n s — tc s = 20 ns — Up to 200 mA • Low Power Consumption • Fast Programming