4H SIC Search Results

Contextual Info: 1200 V-class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-fast Switching capability Ranbir Singha,*, Stoyan Jeliazkov and Eric Lieser GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a ranbir.singh@genesicsemi.com, *corresponding author

pj 69 diode

Abstract: shottky barrier diode 100V 100A diode pj sic igbt 1000V 400 A failure analysis IGBT sic diode diode schottky 600v Cree SiC diode die 300C 600C
Contextual Info: Characterisation of 4H-SiC Schottky Diodes for IGBT Applications C. M. Johnson*, M. Rahimo*, N. G. Wright*, D. A. Hinchley*, A. B. Horsfall*, D. J. Morrison*, A. Knights* *Department of Electrical and Electronic Engineering University of Newcastle Newcastle-upon-Tyne NE1 7RU

sic wafer

Contextual Info: Correlation between carrier recombination lifetime and forward voltage drop in 4H-SiC PiN diodes 1 ,a Gil Chung , M. J. Loboda1), Sid Sundaresan2) and Ranbir Singh2) 1 Dow Corning Compound Semiconductor Solutions, Midland MI 48611, USA 2 GeneSiC Semiconductor Inc., Dulles, VA, 20166, USA

Contextual Info: Development of Radiation Detectors Based on Semi-Insulating Silicon Carbide Frank H. Ruddy, Member, IEEE, John G. Seidel, Robert W. Flammang, Ranbir Singh, Member, IEEE, and John Schroeder Abstract–Fast-neutron detectors based on high-purity semiinsulating 4H silicon carbide SiC semiconductor have been

W6NRD0X-0000

Abstract: W4NRE0X-0D00 W4TRD0R-0D00 1E-18 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8C-S000 W4NXD8D-0000 W4NXD8D-S000
Contextual Info: Effective December 1998 • Revised March 2003 • Page 1 Silicon Carbide Substrates Product Specifications 4H Silicon Carbide n/p-type 6H Silicon Carbide (n/p-type) Page 2 • Effective December 1998 • Revised March 2003 Properties and Specifications for

Contextual Info: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 59, NO. 10, OCTOBER 2012 2795 Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs Siddarth G. Sundaresan, Aye-Mya Soe, Stoyan Jeliazkov, and Ranbir Singh, Member, IEEE Abstract—The stability of the electrical characteristics of SiC

W4PRE8F-0200

Abstract: W4TRD0R-0200 W4TRE0R-0200 W6NRD0X-0D00 W4NRE0X-0D00 silicon carbide cree Sic 1E16 W4TRF0R-0200 W4NRF0X-0D00
Contextual Info: Silicon Carbide Substrates and Epitaxy Product Specications 4H Silicon Carbide Substrates N-type, P-type, and Semi-Insulating 6H Silicon Carbide Substrates N-type N-type and P-type Silicon Carbide Epitaxy Subject to change without notice. www.cree.com 1

2E14

Abstract: 4h sic
Contextual Info: Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields Mrinal K. Dasa, Joseph J. Sumakeris, Brett A. Hull, Jim Richmond, Sumi Krishnaswami and Adrian R. Powell Cree, Inc., 4600 Silicon Drive, Durham, NC, 27703, USA a Mrinal_Das@Cree.com Keywords: PiN Diode, High Voltage, Vf drift, BPD, device yield

westinghouse transistors

Contextual Info: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 1807 A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature Robert S. Howell, Member, IEEE, Steven Buchoff, Stephen Van Campen, Member, IEEE, Ty R. McNutt, Member, IEEE, Andris Ezis, Senior Member, IEEE, Bettina Nechay, Member, IEEE,

R075

Abstract: R15-0
Contextual Info: L[HG $WWHQXDWRUVGF *+]  :DWWV 60$ PP 60$ &RQQHFWRUV  PP &RQQHFWRUV Models 3M/4M Models 3T/4T Models 4H & 4W Models 3330A/ 3331A MIL-A-3933 QPL Ruggedized Construction Low Cost RF & Wireless Models 4W, 3330A & 3331A) Low SWR & Flat Response

Contextual Info: S IE M E N S Extended PCM Interface Controller EPIC-1 PEB 2055 CMOS IC Preliminary Data Type Ordering Code Package PEB 2055-C Q67100-H6034 C-DIP-40 PEB2055-N Q67100-H6035 4H.-CC-44 (SMD) PEB 2055-P Q67100-H6036 P-DIP-40 I I Information from subscriber lines needs to be transferred to time slots on system inter­

1535r

Contextual Info: Weinschel Available Express Products: 1 1 ix e d A t t e m ir it o r s M odel Number C onnector Typ e 1 N N N SM A SM A 1R 2 3M/3T 4H 4M/4T 4R 23 24 BNC N N 33 40 41 44 N N SM A N 45 46 47 N N N N N SM A SM A 48 49 54 3330/3331 ! Product Type dc-18.6 dc-18.0

Contextual Info: Solid-State Electronics 48 2004 1717–1720 www.elsevier.com/locate/sse Reliability of SiC MOS devices q Ranbir Singh *, Allen R. Hefner National Institute of Standards and Technology, 100 Bureau Dr. MS 8120, Gaithersburg, MD 20899, USA Received 10 December 2003; accepted 15 March 2004

3402001

Contextual Info: FUSES / SICHERUNGEN NON RESETTABLE / NICHT RÜCKSTELLEND Sub-miniature fuse-links for surface mounting Type OMF 63 Kleinst-Sicherungseinsätze für Oberflächenmontage Typ OMF 63 quick-acting F flink F directly solderable on printed circuit boards or plugable into surface

Contextual Info: OMF 63 Nicht Rückstellende Sicherungen www.schurter.com/pg01_2 SMD-Sicherung, 7.4 x 3.1 mm, Flink F, 63 VAC, 63 VDC OMF 63 UL 248-14 • 63 VAC · 63 VDC · Flink F Beschreibung Referenzen - Direkt lötbar auf Leiterplatte Allgemeine Produktinformationen

Contextual Info: OMF 125 Nicht Rückstellende Sicherungen www.schurter.com/pg01_2 SMD-Sicherung, 7.4 x 3.1 mm, Flink F, 125 VAC, 125 VDC UL 248-14 • 125 VAC · 125 VDC · Flink F Beschreibung Referenzen - Direkt lötbar auf Leiterplatte Allgemeine Produktinformationen

omf 63 7a

Abstract: OMT 125 omf 63
Contextual Info: FUSES / SICHERUNGEN Non resettable fuses OMF 63 ts Surface Mount Fuses Type OMF 63 63 mA - 5 A 6.3 A - 8A 10 A 1000 quick-acting F available in lead-free NEW version directly solderable on printed circuit boards or plugable into surface mount fuseholder 100

td 3404

Abstract: OMT 125
Contextual Info: FUSES / SICHERUNGEN Non resettable fuses OMF 125 ts Surface Mount Fuses Type OMF 125 63 mA - 5 A 6.3 A - 8A 10 A 1000 quick-acting F available in lead-free NEW version directly solderable on printed circuit boards or plugable into surface mount fuseholder

IEC 60068-2-11

Abstract: 172321 HA81 CEHESS 172321 HA81 CEHESS ha81 iec 60068-2-6
Contextual Info: Sub-miniature fuse-links with wire leads. Type 172321 Kleinst-Sicherungseinsätze mit Drahtanschlüssen. Typ 172321 quick-acting F flink F 50 75 Ø A = 0,62 for / für In ² 10 A Ø A = 0,82 for / für In ³ 12 A 100 Standards / Normen NF C 93-435 • Model HA81

Contextual Info: ASO 10.3x38 Nicht Rückstellende Sicherungen www.schurter.com/pg01_2 Schmelzsicherung, 10.3 x 38 mm, Flink, 1000 VDC, Photovoltaik 1000 VDC • Flink F Beschreibung Anwendungen - UL zugelassen für 1000 VDC - Schaltvermögen: 20 kA - Strangsicherungen für Photovoltaikanlagen

omf 125 7a

Abstract: omf 63
Contextual Info: FUSES / SICHERUNGEN Non resettable fuses / Nicht rückstellende Sicherungen Surface Mount Fuses Type OMF 125 Oberflächenmontierbare Sicherungen Typ OMF 125 quick-acting F flink F available in lead-free NEW version directly solderable on printed circuit boards or

Contextual Info: TF-Sicherungseinsätze für Nennspannungen bis 90 V / TF -Fuse links for rated voltage up to 90 V / TF -Fusibles pour tension nom. jusqu'à 90 V Isolierkörper / Insulating body / Corps Isolants: aus Thermoplast / out of thermoplastic / de matière thermoplastique

Contextual Info: FUSES / SICHERUNGEN Non resettable fuses / Nicht rückstellende Sicherungen Surface Mount Fuses Type OMF 125 Oberflächenmontierbare Sicherungen Typ OMF 125 quick-acting F flink F available in lead-free NEW version directly solderable on printed circuit boards or

cehess fuses

Abstract: CEHESS ma750
Contextual Info: FUSES / SICHERUNGEN NON RESETTABLE / NICHT RÜCKSTELLEND NEW Sub-miniature fuse-links for surface mounting Type MKF NEU Kleinst-Sicherungseinsätze für Oberflächenmontage Typ MKF quick-acting F flink F directly solderable on printed circuit boards direkt einlötbar auf Leiterplatten