4FL5545S Search Results

1117s

Abstract: transistor wc 2C vqe 24 d TO220AB IGBT PHPI IRGBC36
Contextual Info: INTERNATIONAL RECTIFIER 4Ö5S4S2 00l0bQ3 T • 2t.E D Data Sheet No. PD-9.668 • 7 3*?-03 - - International ÜH Rectifier INSULATED GATE BIPOLAR TRANSISTOR BOOV, 34A FEATURES 600V, 34A, TO-220AB IGBT International R ectifier’s IR G series of Insulated G ate

Contextual Info: Data Sheet No. PD-9.815A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRH7450 IRH8450 N-CHANNEL MEGA RAD HARD 500 Volt, 0.45 2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown

I1092

Contextual Info: Provisional Data Sheet No. PD 9.1289B International IOR Rectifier HEXFET PO W E R M O S F E T IR FY240C M N-CHANNEL Product Summary 200Volt, 0.18Q HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power M OSFET transistors. The effi­

Contextual Info: Bulletin 12068/B International SRectifier SD 603C.C s e r ie s FAST RECOVERY DIODES Hockey Puk Version Features • H igh p o w e r F A S T re c o v e ry d io d e s e rie s ■ 1.0 to 2 .0 ps re c o v e ry tim e ■ H igh v o lta g e ra tin g s up to 2 2 0 0 V

C559

Abstract: IRGRDN300M12 IRGDDN300M12
Contextual Info: IRGDDN300M12 IRGRDN300M12 — hecnner "SINGLE SW ITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT V CE= 1200V lc = 300A •Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated V ce ON < 2.7V tsc> 10ms