4C6 SPECIFICATIONS Search Results

4c6 philips

Abstract: t25 4C6 4C6 SPECIFICATIONS material 4c6 Philips 4C6 MBW006
Contextual Info: Philips Components Material grade specification 4C6 4C6 SPECIFICATIONS SYMBOL CONDITIONS 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 3 MHz; 0.1 mT 25 °C; 10 MHz; 0.1 mT 25 °C; 100 kHz; 1.5 to 3 mT 25 °C; 100 kHz;

TH562

Abstract: th562 c 4C6 ferrite SD1731 ferrite core transformer pin connection 4C6 SPECIFICATIONS
Contextual Info: SD1731 TH562 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 13 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CO DE SD1731 BRANDING TH562 PIN CONNECTION

ferrite core transformer pin connection

Abstract: power transformer from malaysia 4C6 ferrite FERRITE TRANSFORMER HF SSB APPLICATIONS planar impedance transformer planar transformer SD1731 SD1731-14 ST448
Contextual Info: SD1731-14 ST448 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 250 W PEP WITH 12 dB GAIN .50 0 4LF L (M17 4 ) epoxy sealed O R DE R CODE

4C6 ferrite

Abstract: ferrite core 4c6 ferrite core transformer pin connection ST448 4C6 SPECIFICATIONS SD1731 datasheet TORIOD SD1731 SD1731-14 ssb transformer
Contextual Info: SD1731-14 ST448 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 250 W PEP WITH 12 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1731-14

TH562

Abstract: TORIOD SD1731 th562 c ferrite core transformer pin connection IE transformer core 47UF63V
Contextual Info: SD1731 TH562 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 13 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1731 BRANDING TH562 PIN CONNECTION

BJBS

Abstract: 4C6 ferrite TH562
Contextual Info: . 5 7 SGS-THOMSON SD1731 TH562 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION Pout — 220 W PEP WITH 13 dB GAIN PIN CONNECTION 1 4X \ (o f jO ) \y DESCRIPTION The SD1731 is a 50 V epitaxial silicon NPN planar

Contextual Info: SGS-THOMSON 5 i. SD1731-14 ST448 •ILO RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION P o u t = 250 W PEP WITH 12 dB GAIN .500 4LFL (M 174) epoxy sealed

transistor k 4213

Abstract: STMicroelectronics marking code date th562 SD1731 Date Code Marking STMicroelectronics FERRITE TRANSFORMER HF SSB APPLICATIONS k 4213 planar impedance transformer SD1731 datasheet
Contextual Info: SD1731 TH562 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 50 VOLTS ■ EFFICIENCY 40% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 220 W PEP WITH 13 dB GAIN DESCRIPTION The SD1731 is a 50 V epitaxial silicon NPN planar

Contextual Info: Œ fï . SG S-IHO M SON l[Li ïï[ÊMO©S SD1731 TH562 RF & M ICRO W AVE TR AN SISTO R S HF SSB APPLIC ATIO N S . OPTIMIZED FOR SSB • 30 MHz ■ 50 VOLTS . EFFICIENCY 40% . COMMON EMITTER ■ GOLD METALLIZATION > P o u t = 220 W PEP WITH 13 dB GAIN PIN CONNECTION

SD1731 datasheet

Abstract: k 4213 transistor k 4213 SD1731 TH562 STMicroelectronics th562
Contextual Info: SD1731 TH562 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 50 VOLTS ■ EFFICIENCY 40% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 220 W PEP WITH 13 dB GAIN DESCRIPTION The SD1731 is a 50 V epitaxial silicon NPN planar

5A6 smd

Abstract: smd 5b1 9A4 smd transistor Transistor 8c4 smd 3D5 3 PIN 11d4 Teccor Electronics a6 DK101 DK2000 DS2155DK
Contextual Info: DS2155DK/DS2156DK T1/E1/J1 Single-Chip Transceiver Design Kit Daughter Cards www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS2155/DS2156 design kits are evaluation boards for the DS2155 and DS2156. The DS2155/DS2156 design kits are intended to be used

rj48_con

Abstract: 5B1 package SMD 11D4 pc motherboard schematics 11B7 5A6 t smd
Contextual Info: DS21352DK T1 Single-Chip Transceiver Design Kit Daughter Card www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS21352 design kit is an easy-to-use evaluation board for the DS21352 T1 single-chip transceiver SCT . The DS21352DK is intended to be used as a

5A6 smd

Abstract: 10uF 160v Transistor 8c4 6c2 diode 9A4 SMD SMD 6c6 TANTALUM SMD CAPACITOR CROSS-REFERENCES Transistor 6C5 DK101 DK2000
Contextual Info: DS21354DK E1 Single-Chip Transceiver Design Kit Daughter Card www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS21354 design kit is an easy-to-use evaluation board for the DS21354 E1 single-chip transceiver SCT . The DS21354DK is intended to be used as a

5A6 smd

Abstract: 4C6 SPECIFICATIONS 11d4 Transistor 8c4 smd 8c7 5a7 02 11d5 XC95144XL-10TQ100c DK101 DS18
Contextual Info: DS21352DK T1 Single-Chip Transceiver Design Kit Daughter Card www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS21352 design kit is an easy-to-use evaluation board for the DS21352 T1 single-chip transceiver SCT . The DS21352DK is intended to be used as a

Contextual Info: SKiM 400GD126DM Absolute Maximum Ratings Symbol Conditions IGBT M>NG -> ->TU M.NG $X C$5,*D $ 67 $5 H IJ CRPD K> ,7 H O E5 E+][ (+5& 67&%+,1'* ,&E7&%+,:%& M1563 SKiM 4 $( H IJ K>L :'3&55 6, &%015& 57&(121&4 -; -;TU $5 H IJ CRPD K> ,7 H O E5 -;GU ,7 H OP E5^ 51'[^ $X H OJP K>

Contextual Info: SKiM 601GD126DM Absolute Maximum Ratings Symbol Conditions IGBT M>NG -> ->VW M.NG $Z C$5,*D $ 67 SKiM 5 SKiM 601GD126DM Preliminary Data Features # $%&'( *+,& -./$ 01,) 21&34 5,67 # # E+^¥ (+5& 67&%+,1'* ,&E7&%+,:%& Values Units OIPP STP CURPD XPP Y IP [ SP ¥¥¥ ] OJP COIJD

4C6 ferrite

Contextual Info: SGS-THOMSON m SD1731-14 ST448 RF & MICROWAVE TRANSISTO RS HF SSB APPLICATIONS PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION Pout = 250 W PEP WITH 12 dB GAIN .50 0 4 L F L ( M 1 7 4 ) epoxy sealed O R D ER CODE

6dr6

Contextual Info: 1234567 Voltage Regulator with LIN Transceiver 89ABCD9E7 o o Compatible to LIN Specification 2.0 and SAE J2602 Operating voltage VS = 6 . 18 V Low standby current consumption of typ. 15 µA in sleep mode 1 “noload” current < 200µA o Linear low drop voltage regulator 5V/70mA ±2%

DIODE aaz

Contextual Info: SKiM 600GD126DLM . $ I JK L>M :'3&55 6, &%015& 57&(121&4 Absolute Maximum Ratings Symbol Conditions IGBT N>OG $P I L> -> $P I RKS L> ->YZ RJSS N KJU ? $)&+,51'T I VS L> WXR ? _SS ? ` JS N RS c5 $)&+,51'T I JK L> W^^ ? $)&+,51'T I VS L> J^_ ? XSS ? WWSS

MLX16

Contextual Info: MLX91801 Tire Pressure Monitoring SiP Features and Benefits Application Examples 1 Low-Power Microcontroller-based PressureTemperature-Battery monitor, ideally suited for TPMS 1 Different available pressure ranges up to 1400 kPa 1 Measurement of car and truck tire pressure

philips ferroxcube 4c6

Abstract: mgp063 BLF175 PHILIPS HF CHOKE type 4330 hf amplifier for transformer D1 Marking SOT123 PHILIPS toroidal core MGP080 ferroxcube 4C6 ferroxcube 4322 020 97171
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF175 HF/VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF175 PIN CONFIGURATION • High power gain • Low intermodulation distortion

bz 148 diode

Abstract: 74VHC245 74VHC245M 74VHC245MTC 74VHC245SJ 74VHCT245 M20D MTC20 VHC245
Contextual Info: EM ICDNDUCTOR t 74VHC245 • 74VHCT245 Octal Bidirectional Transceiver with 3-STATE Outputs General Description Features The VH C/VH C T245 is an advanced high speed C M O S octal bus tran sce ive r fabricated w ith silicon gate C M O S technol­ ogy. It achieves high speed operation sim ilar to equivalent

Contextual Info: Rev: 102108 DS33M33 Demo Kit General Description The DS33M33 demo kit DK is an easy-to-use evaluation board for the DS33M33 and the DS33M33 Ethernet-over-SONET/SDH devices. The demo kit contains an option for either T3 or E3. The T3E3 links are complete with line interface, transformers, and

do214

Abstract: T1 6C6 smd A12 5PIN smd z17 smd A13 5pin XC2S50 driver CON12P F1333 Transistor 5C5 Transistor 8c4
Contextual Info: DS21Q55DK Quad T1/E1/J1 Transceiver Design Kit Daughter Card www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS21Q55DK is an easy-to-use evaluation board for the DS21Q55 quad T1/E1/J1 transceiver. The DS21Q55DK is intended to be used as a daughter card with the DK101 motherboard or the DK2000