4B7500 Search Results

HY62C64

Abstract: 8192X8BIT
Contextual Info: H Y U N D A I E L E C T R O N I C S 03 D E | 4b7500â Q000117 M T-46-23-12 PRELIMINARY N f SEMICONDUCTOR NOVEM BER 1986 DESCRIPTION FEATURES The HYUNDAI HY62C64 is a 65, 536-bit static random access memory organized as 8192 words by 8 bits and operates from a single 5 volt supply It is built

Contextual Info: HYUNDAI HY62256B-I Series _ 32Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: • HY UNDAI HYCFLF16008 Series _8MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16008 is the Flash memory card consisting of four 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Rash memory card is optimized for the application of data and file storage in

Contextual Info: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs

Contextual Info: «HYUNDAI HY5116160 Series 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: m V Y m I I I I 11 A I H Y 5 7 V 1 6 1 6 1 I V H U ft I S e r ie s 1M X 16 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16161 is a very high speed 3.3 Volt synchronous dynamic RAM organized 1,048,476x16 bits, and fabricated with the Hyundai CMOS process. This dual bank circuit consists of two memories, each 524,288 words

Contextual Info: mH Y II N U It I A 1 V I I U I I B I 4 M x 1 6 b it S y n c h r o n o u s D R A M S e r ie s HY57V641610/ HY57V641620/ HY57V651610/ HY57V651620 HY57V641611/ HY57V641621/ HY57V651611/ HY57V651621 PRELIMINARY DESCRIPTION HY57V641610 2Mbit X 2bank x 16 I/O, LVTTL

Contextual Info: •HYUNDAI H Y 5 1 1 6 2 6 0 S e r ie s IM X 16-bit CMOS DRAM with 2CAS &WPB DESCRIPTION The HY5116260 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116260 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

HY524400

Contextual Info: HY524400 Series »HYUNDAI 1 M x 4-bit CMOS DRAM DESCRIPTION The HY524400 is the new generation and fast dynamic RAM organized 1,048,576 x 4 bits. The HY524400 utilizes CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins

Contextual Info: HYUNDAI H Y 5 1 V 1 7 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: •HYUNDAI SEMICONDUCTOR H Y 5116410 S e rie s 4M X 4-blt CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5116410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5116410 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced

Contextual Info: H Y 5 1 1 8 1 6 0 B • « H Y U N D A I S e r ie s 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160B Is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: “HYUNDAI H Y M 5 3 2 4 1 0 M - S e r ie s 4M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532410 is a 4M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2?«F decoupling capacitor is mounted for each DRAM.

Contextual Info: • H Y U N D A I H Y M 5V 64214A Z -S e r ie s SO DIMM 2M X 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION Ttie HYM5V64214A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY51V178046 in 28/28 pin SOJ or TSOR-II and one 2048 bit EEPROM on a 144 Zig Zag Dual pin glass-epoxy printed circuit board. 0.22pF