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    4B600 Search Results

    4B600 Datasheets (1)

    JCET Group
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge CT404B-600S
    JCET Group CT404B 4Q TRIACs feature NPNPN 5-layer structure, glass passivated mesa technology, 4A RMS on-state current, 600V or 800V repetitive peak off-state voltage, high junction temperature tolerance, and good commutation performance in a TO-220BK package. Original PDF
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    4B600 Price and Stock

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    Wurth Elektronik 15406094B6000

    WL-SICW SMT INFRARED CHIPLED WAT
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    DigiKey () 15406094B6000 Cut Tape 3,059 1
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    15406094B6000 Digi-Reel 3,059 1
    • 1 $0.37
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    15406094B6000 Tape & Reel 3,000 3,000
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    Mouser Electronics () 15406094B6000 4,573
    • 1 $0.37
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    15406094B6000 4,573
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    Newark () 15406094B6000 Tape & Reel 2,895 100
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    15406094B6000 Cut Tape 2,895 5
    • 1 -
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    BOYD Laconia 374324B60023G

    BGA HEAT SINK
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    DigiKey 374324B60023G Bulk 1,971 1
    • 1 $3.71
    • 10 $3.28
    • 100 $3.01
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    Mouser Electronics () 374324B60023G 317
    • 1 $3.60
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    374324B60023G 317
    • 1 $3.60
    • 10 $3.21
    • 100 $2.93
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    BOYD Laconia 374724B60024G

    HEATSINK BGA W/O SOLDER ANCHORS
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    DigiKey 374724B60024G Bulk 681 1
    • 1 $7.30
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    • 100 $5.93
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    Bristol Electronics 374724B60024G 207
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    Master Electronics 374724B60024G 1,412
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    Power Integrations LXA04B600

    DIODE STANDARD 600V 4A TO263AB
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    DigiKey () LXA04B600 Cut Tape 550 1
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    LXA04B600 Digi-Reel 550 1
    • 1 $0.64
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    • 100 $0.53
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    LXA04B600 Tape & Reel 800
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    Newark () LXA04B600 Tape & Reel 579 100
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    LXA04B600 Cut Tape 579 1
    • 1 $0.86
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    Bristol Electronics LXA04B600 374 1
    • 1 $1.06
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    EBV Elektronik LXA04B600 20 Weeks 4,800
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    Littelfuse Inc SL1024B600R

    GDT 600V 20KA 3 POLE TH
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    DigiKey SL1024B600R Tray 1,000
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    Vyrian SL1024B600R 10,347
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    4B600 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    T393D

    Abstract: impatt diode MICROWAVE ASSOCIATES impatt diode operation impatt ODS-91 radar impatt impatt diode W band
    Contextual Info: 5 6 4 2 2 1 4 M / A - C O M SEMICÖ^ffUCtÖR "t 3 MICROWAVE ASSOCIATES A ^ C O M r u n k i T C 93D 00522 D Ë^ jsm aa m oaoasaa 7= 7 // a COMPANY MA-4B600 SERIES Silicon Double D rift CW IM PATT Diodes it Description Features Silicon Double Drift IMPATT IMPact Ionization


    OCR Scan
    MA-4B600 T393D impatt diode MICROWAVE ASSOCIATES impatt diode operation impatt ODS-91 radar impatt impatt diode W band PDF

    JS28F512M29

    Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
    Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original
    M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 PC28F00AM29EWHA 11-Apr-2011 JS28F512M29 js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL PDF

    7be0

    Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original
    M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 48MB/s) Kbytes/64 7be0 PDF

    M29EWL

    Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
    Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original
    M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 144KB 256Mb M29EWL JS28F00AM29EWH 28F256M29EW JS28F00AM29EW PDF

    JS28F00am29

    Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
    Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original
    M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 JS28F00am29 JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256 PDF

    JS28F512M29EWL

    Abstract: JS28F00AM29EWH JS28F256M29EWL JS28F512m29ewh JS28F00am29 pc28f512m29ewh JS28F256M29EWH JESD-47 PC28F00AM29EWH 28F256M29EW
    Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original
    M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 JS28F512M29EWL JS28F00AM29EWH JS28F256M29EWL JS28F512m29ewh JS28F00am29 pc28f512m29ewh JS28F256M29EWH JESD-47 PC28F00AM29EWH 28F256M29EW PDF

    JS28F512

    Abstract: JS28F256M29EWL M29EWL js28f256m29 JS28F512M29 JS28F00am29 PC28F512 5D200 PC28F256M29
    Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original
    M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 11-Apr-2011 PC28F00AM29EWHB JS28F512 JS28F256M29EWL M29EWL js28f256m29 JS28F512M29 JS28F00am29 PC28F512 5D200 PC28F256M29 PDF

    JS28F512M29

    Abstract: M29AWH PC28F512M29AWHB pc28f00am29 Micron 512MB NOR FLASH 8bit data PC28F00AM29AWLB PC28F512M PC28F512 JS28F512 M29A
    Contextual Info: Preliminary‡ 1Gb, 512Mb: x8, x16 3V Supply NOR Flash Memory Features Micron 3V Supply NOR Flash Memory M29AW – 1Gb, 512Mb x8/x16, Uniform Block Features • Blank check to verify an erased block • VPP/WP# pin protection – Protects first or last block regardless of block protection settings


    Original
    512Mb: M29AW 512Mb x8/x16, 100ns 110ns 512-word 128KB/64 09005aef8462ccad/ZIP 09005aef8462cca4 JS28F512M29 M29AWH PC28F512M29AWHB pc28f00am29 Micron 512MB NOR FLASH 8bit data PC28F00AM29AWLB PC28F512M PC28F512 JS28F512 M29A PDF

    Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit x8 / x16, page, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original
    M29EW 256-Mbit, 512-Mbit, 100ns 512-word 48MB/s) Kbytes/64 PDF

    JS28F256m

    Abstract: js28f256m29 JS28F512 256M29EWH
    Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original
    M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 JS28F256m js28f256m29 JS28F512 256M29EWH PDF