4ASSM52 Search Results

KA 7015

Abstract: 4ASSM52
Contextual Info: International IQR Rectifier Bulletin 127090 rev. A 09/97 IRK. SERIES STANDARD RECOVERY DIODES MAGN-A-pak Power Modules Features • 250A 270A 320A High voltage ■ Electrically Isolated base plate ■ 3 5 0 0 V RMSlsolatlng voltage ■ Industrial standard package

Contextual Info: brtemational PD91226 j«g]Rectifier_ IRFD 320 HEXFET P ow er M O S FE T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements

Contextual Info: International Rectifier PD 9.1097A IRF7105 preliminary HEXFET® Power M O SFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching

Contextual Info: INTERNATIONAL RECTIFIER bSE D • 4Û5S452 ÜD17110 1EÖ PD-2.306 International S Rectifier 31 dqo 9 31DQ10 3.3 Amp SCHOTTKY RECTIFIER Description/Features Major Rating» and Characteristics The 31 DQ. axial leaded Schottky rectifier has been opti­ mized for very low forward voltage drop, with moderate

U9024N

Abstract: BSS 250 IRFR P-Channel MOSFET
Contextual Info: P D - 9.1506 International IGR Rectifier PRELIMINARY 1RFR/U9024N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount IRFR9024N Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Vdss = -55V RDS(on) = 0.175Í2

Contextual Info: PD - 9.1562A International IQR Rectifier IRF9410 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Vqss = 30 V ^DS on = Description