4AC14 Search Results

4AC14

Abstract: 4ac14 equivalent Hitachi DSA001650
Contextual Info: 4AC14 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline SP-10 3 2 5 4 ID 1 1 10 6 7 9 8 ID 1, 10 Emitter 2, 4, 6, 8 Base 3, 5, 7, 9 Collector ID ID 10 4AC14 Absolute Maximum Ratings for each device, Ta = 25°C Item Symbol Ratings

Contextual Info: 4AC14 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline 1 ,1 0 2, 4, 6, 8 E m itte r Base 3, 5, 7, 9 C o lle c to r 4AC 14 Absolute Maximum Ratings for each device, Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage

4AC14

Contextual Info: 4AC14 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline SP-10 1 10 Emitter 2 4 6 8 Base 3 5 7 9 Collector 4AC14 Absolute Maximum Ratings for each device, Ta = 25°C Item Symbol Ratings Unit Collector to base voltage ^CBO

Contextual Info: 4AC14 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline S P -1 0 1 ,1 0 2, 4, 6, 8 E m itte r Base 3, 5, 7, 9 C o lle c to r 4AC14 Absolute Maximum Ratings for each device, Ta = 25 °C Item Sym bol Ratings Unit Collector to base voltage

Hitachi DSA002787

Contextual Info: 4AC14 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline SP-10 3 2 5 4 ID 1 1 10 6 7 9 8 ID 1, 10 Emitter 2, 4, 6, 8 Base 3, 5, 7, 9 Collector ID ID 10 4AC14 Absolute Maximum Ratings for each device, Ta = 25°C Item Symbol Ratings

4ac14

Contextual Info: HITACHI 4AC14-Silicon NPN Triple Diffused Low Frequency Power Amplifier A bsolute M axim um Ratings fo r each device, Ta = 25°C Item Sym bol Rating Unit Collector to base voltage V CBO 150 V Collector to emitter voltage V CEO 150 V P c1 = 25£>C}

4ac14 equivalent

Abstract: 4AC14 SP-10 DSA003723 Hitachi DSA003723
Contextual Info: 4AC14 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline SP-10 3 2 5 4 ID 1 1 10 6 7 9 8 ID 1, 10 Emitter 2, 4, 6, 8 Base 3, 5, 7, 9 Collector ID ID 10 4AC14 Absolute Maximum Ratings for each device, Ta = 25°C Item Symbol Ratings

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,

transistor 2sk

Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Contextual Info: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k

4ac14 equivalent

Abstract: 4AC14
Contextual Info: r z T Ä 7# S G S -T H O M S O N RfflDglSÌOilLiOiriRÌOiDtgi 4AC14 HEX INVERTER . . . HIGH SPEED: tpD = 6 ns TYP. at Vcc = 3.3V LOW POWER DISSIPATION: Ice = 4 \l A (MAX.) at TA = 25 °C HIGH NOISE IMMUNITY: V nih = V nil = 28% V cc (MIN.) • 50i2 TRANSMISSION LINE DRIVING