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    ic chip ic 4410

    Abstract: 4410 ic 4410 ic ma 4810
    Contextual Info: 7 C]CÏ 0 7 4 1 00014fl4 170 « S A K J SANKEN T-1 1/2 High Intensity Type Diffused SEL 4210R SEL 4410 G SANKEN LIGHT EMITTING DIODES SEL 4810 D SEL 491OD FEATURES • H igh In te n s ity T y p e • For D is p la y an d Other General Uses • L o n g -life /H ig h R eliability


    OCR Scan     		00014fl44210r491odic chip ic 4410+34410 ic4410ic ma 4810 PDF

    MGF4918D

    Abstract: mgf4914 MGF4914D MGF4910 mitsubishi mgf MGF4917D MGF4916D MGF4917 MGF4910D
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF4910D Series TA P E C A R R IER S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE D R A W IN G The MGF4910D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		mgf4910d491od12ghzmgf4914d+8mgf4916dmgf4917dmgf4918dm5m27c102pmgf4914mgf4910mitsubishi mgfmgf4917 PDF