48P3E Search Results

Contextual Info: JEITA Package Code P-TSOP 1 48-12x18.4-0.50 RENESAS Code PTSA0048KD-B Previous Code 48P3E-B MASS[Typ.] 0.5g HD *2 D Index mark 48 *3 bp 1 NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. S e *1 E

48pin TSOP

Contextual Info: E 25 48 EIAJ Package Code TSOP 48-P-1220-0.50 D HD JEDEC Code – F Weight g 24 1 Detail F Lead Material Cu Alloy A 48P3E-C A2 A1 e b L L1 y b2 I2 MD A A1 A2 b c D E e HD L L1 y Symbol Mar.’98 Dimension in Millimeters Min Nom Max – – 1.2 0.05 0.125

DSA00373

Contextual Info: 48P3E-C JEDEC Code – Weight g Lead Material Cu Alloy MD e EIAJ Package Code TSOP 48-P-1220-0.50 Plastic 48pin 12✕20mm TSOP( ) b2 HD e D 1 48 l2 Recommended Mount Pad E y Symbol 25 b 24 A F A1 c A2 L1 L Detail F A A1 A2 b c D E e HD L L1 y b2 I2 MD Dimension in Millimeters

48P3E-B

Abstract: 48-P-1220-0
Contextual Info: 48P3E-B Plastic 48pin 12✕20mm TSOP JEDEC Code – Weight(g) Lead Material Cu Alloy MD e EIAJ Package Code TSOP 48-P-1220-0.50 b2 HD D l2 e 48 1 Recommended Mount Pad E y 24 b Symbol 25 F A1 c A2 A L1 L Detail F A A1 A2 b c D E e HD L L1 y b2 I2 MD Dimension in Millimeters

432W6

Abstract: 48P4B hssop 44P3W-R 28P0 5P5T tsop 2-54 42P9R 70P3S-M 479F7G
Contextual Info: MITSUBISHI INTEGRATED CIRCUIT PACKAGES LIST OF PACKAGE CODES CLASSIFIED ACCORDING TO PIN NUMBER 1. LIST OF PACKAGE CODES CLASSIFIED ACCORIDING TO PIN NUMBER Pin Count Structure Type Lead Pitch mm 5 P P P P P P C C P P P C P P P P P P P P C P P P P P P P

Contextual Info: MITSUBISHI LSIs M5M29KBT800AVP P U E U M W A R Y 8,388,608-BIT 1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT _ CMOS 5.0V-ONLY. BLOCK ERASE FLASH MEMORY Noti S o rn B T ’ DESCRIPTION The M ITSUBISHI Mobile FLASH M 5M 29KB/T800AVP is 5.0V-only high speed 8,388,608-bit CM OS boot block Flash Mem ories with

M5M29GB160BVP

Abstract: M5M29GT160BVP
Contextual Info: MITSUBISHI LSIs M5M29GBT160BVP-80 16,777,216-BIT 2097,152-WORD BY 8-BIT /1048,576-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M ITSUBISHI Mobile FLASH M 5M 29G B/T160BVP are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Mem ories with

100MHZ

Abstract: IC PACKAGE ELECTRICAL CHARACTERISTIC LCR 24p2n-a 136P6S-C
Contextual Info: MITSUBISHI INTEGRATED CIRCUIT PACKAGES IC PACKAGE ELECTRICAL CHARACTERISTIC 6.2 IC PACKAGE ELECTRICAL CHARACTERISTICS Tables 1, 2 and 3 show electrical characteristics of packages of various types. They are called LCR values, which include Ls, Lm, Co, Cm,

ic tlp 759

Abstract: SL-BC050515TJ-1 JHB-TQ121214-M L196-49 L196-65A PTB54C SL-BG060615TJ-2 SL-BG060615TJ-1 ST-TQ070710TJ-1 PVQN0020KB-A
Contextual Info: Unit:mm The pin1 is located in the hatching portion Note : Numbers in parentheses are the numbers of Ics contained in five trays per inner box, and those without parentheses are the numbers of Ics contained in eight or nine trays per inner box.

Contextual Info: INAARRYYn. IMIN PPRREELLIM tio ification. al specifica MITSUBISHI LSIs MITSUBISHI LSIs . ecect to changege spbj t at fin a final nono is is an . s is Th e su arar e :eT: hi ictic itsits No e subject to ch Not limlim ricric etet m m ra ra pa pa e e m So Som

Contextual Info: MITSUBISHI LSIs M5M29GB/T160BVP-80 16,777,216-BIT 2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T160BVP are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with

R1LV0816ASA-7SI

Abstract: R1LV0816ASA
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: MITSUBISHI LSIs p r e l im in a r y M 5 M 2 9 J B / T 1 6 0 A V P - 8 0 ,J- 1 0 Som e { 16,777,216-BIT 2,097,152-WORD BY 8-BIT /1,048,576-WORD BY16-BIT _CMOS 5.0V-ONLY. BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI M 5M 29JB/T160A

M5M28FB800

Contextual Info: MITSUBISHI LSIs M5M28FB800VP-12I ÿome 8388608-BIT 524288-WORD BY 16-BIT CMOS 3.3V/5V BACK GROUND OPERATION FLASH MEMORY * DESCRIPTION The M5M28FB800 is 3.3V(read)/5V(program/ erase) high speed 8388608-bit CMOS boot block Flash Memory suitable for mobile

P-8388

Contextual Info: MITSUBISHI LSIs P R E L IM IN A R ^ ^ . ± nt Ä c U o % a n ge. M5M29KB/T800AVP 8,388,608-BIT 1048,576-WORD BY 8-BIT 1524,288-WORD BY16-BIT CMOS 5.0V-ONLY. BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29KB/T800AVP Is 5.0V-only high speed 8,388,608-bit CMOS boot block Flash Memories with

48P4B

Abstract: P/N146071 hssop 432W6 70P3S-M 10C2-C 136P6S-C 20P5A
Contextual Info: 3. DETAILED DIAGRAM OF PACKAGE OUTLINES LIST OF PACKAGE CODES CLASSIFIED ACCORIDING TO PACKAGE TYPE Pin Count Structure 5 8 8 10 12 9 12 12 14 16 20 24 8 14 16 18 18 20 20 22 22 24 24 24 24 28 28 28 30 32 32 32 40 42 20 28 30 32 36 40 42 48 52 64 P P P P P

Tcs3c

Contextual Info: MITSUBISHI LSIs M5M29GBT800AVP,RV P U E U M W A R Y 8,388,608-BIT 1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT _ CMOS 3.3V-ONLY. BLOCK ERASE FLASH MEMORY Noti SornBT’ DESCRIPTION The MITSUBISHI Mobile FLASH M 5M 29GB/T800AVP, RV are 3.3V-only high speed 8,388,608-bit CM OS boot block Flash Mem ories with

Contextual Info: MITSUBISHI LSIs p r e l im in a r y n o t a fin a i s ^ J ^ M5M29FB/T160A VP,RV-80,-10,-81 nc h a n g e . 16,777,216-BIT 2,097,152-WORD BY 8-BIT / 1 ,048,576-WORD BY16-BIT S o m e p a r a m e t r i c lim itó a r e CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

Contextual Info: . ik IJ V R Y MITSUBISHI LSIs pbeumWAw M5M29G B/T008/801AWG Th\q is not a final sp e 1 10 change. Notice¿Metric limits are subiec So 8 ,38 8,60 8-B IT 1048,576-W O R D BY 8 -B IT / 524,288-W O R D B Y16-B IT CMOS 3.3V-ONLY. BLOCK ERASE FLASH MEMORY DESCRIPTION

62H01

Contextual Info: MITSUBISHI LSIs Y ELIMINAR PR tion. al specifica is is not a fin change. Notice : Th e subject to ar its lim ric et m ra pa e Som M5M29FB/T160AVP,RV-80,-10,-8I 16,777,216-BIT 2,097,152-WORD BY 8-BIT / 1,048,576-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

1. Mobile Computing block diagram

Abstract: M5M29GB320VP M5M29GT320VP 320VP
Contextual Info: Renesas LSIs M5M29GB/T320VP-80 33,554,432-BIT 4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The Mobile FLASH M5M29GB/T320VP are 3.3V-only high speed 33,554,432-bit CMOS boot block Flash Memories with alternating BGO

D8000H-DFFFFH

Abstract: FE000H-FFFFFH T160A
Contextual Info: MITSUBISHI LSIs MITSUBISHI LSIs Y ELIMINAR PR tion. al specifica is is not a fin change. Notice : Th e subject to ar its lim ric et m ra pa e Som M5M29JB/T160AVP-80,-10 M5M29JB/T160AVP-80,-10 16,777,216-BIT 2,097,152-WORD BY 8-BIT / 1,048,576-WORD BY16-BIT

M5M29GB160BVP

Abstract: M5M29GT160BVP
Contextual Info: MITSUBISHI LSIs M5M29GB/T160BVP-80 16,777,216-BIT 2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T160BVP are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with

1. Mobile Computing block diagram

Abstract: M5M29GT320VP M5M29GB320VP
Contextual Info: Renesas LSIs M5M29GB/T320VP-80 33,554,432-BIT 4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The Mobile FLASH M5M29GB/T320VP are 3.3V-only high speed 33,554,432-bit CMOS boot block Flash Memories with alternating BGO