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    onsemi CAT25320VP2I-GT3

    EEPROM Serial-SPI 32K-bit 4K x 8 2.5V/3.3V/5V 8-Pin TDFN EP T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics CAT25320VP2I-GT3 50
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    onsemi CAT25320VP2IGTKK

    EEPROM 32kbit 4k x 8 1.8V - 5.5V SPI 10MHz 40ns 5ms 8-SON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics CAT25320VP2IGTKK 30,000 1
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    • 1000 $0.21
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    Mitsubishi Electric M5M29GT320VP80

    Flash Memory
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA M5M29GT320VP80 99
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    320VP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Rifa PEH 165

    Abstract: PEH165 Rifa PEH169 169RV510VM peh 165 Rifa PEG 124 PEH165PG4470Q 169MV568VM PEH165KC4330Q 169PA410VM
    Contextual Info: PEH 124 • • • • 125°C Snap-in terminals High performance, 125°C Long Life > 30 years at 50°C Low ESR and ESL APPLICATION BASIC DESIGN The PEH 124 is a radial capacitor for PCB mounting with a 3-pin snap-in termination. It is mainly intended for SMPS or other


    Original     		rifa peh 165peh165rifa peh169169rv510vm+6peh 165rifa peg 124peh165pg4470q169mv568vmpeh165kc4330q169pa410vm PDF

    1. Mobile Computing block diagram

    Abstract: M5M29GB320VP M5M29GT320VP 320VP
    Contextual Info: Renesas LSIs M5M29GB/320VP-80 33,554,432-BIT 4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The Mobile FLASH M5M29GB/320VP are 3.3V-only high speed 33,554,432-bit CMOS boot block Flash Memories with alternating BGO


    Original     		m5m29gb/t320vp-80432-bit304-word152-word+7by16-bitm5m29gb/t320vprej03c00251. mobile computing block diagramm5m29gb320vpm5m29gt320vp320vp PDF

    Contextual Info: PEH 300/320 ss c • • • • • Snap-In Electrolytic Capacitor Long Life Grade PCB Mounting Low ESR and ESL High ripple current A P P L IC A T IO N B A S IC D E S IG N PEH 300 is a Long Life electrolytic capa­ citor designed to offer high ripple current


    OCR Scan     		20khz40x100300yr3150m300ys3180m2+6300yt3220m2300yx3220m2300yy3270m2300yz3330m2/4320yp3330m4320yc3390m4 PDF

    1. Mobile Computing block diagram

    Abstract: M5M29GT320VP M5M29GB320VP
    Contextual Info: Renesas LSIs M5M29GB/320VP-80 33,554,432-BIT 4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The Mobile FLASH M5M29GB/320VP are 3.3V-only high speed 33,554,432-bit CMOS boot block Flash Memories with alternating BGO


    Original     		m5m29gb/t320vp-80432-bit304-word152-word+6by16-bitm5m29gb/t320vprej03c00251. mobile computing block diagramm5m29gt320vpm5m29gb320vp PDF

    M5M29GT320VP

    Abstract: mitsubishi m5m29gt320vp M5M29GB320VP
    Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		m5m29gt320vpmitsubishi m5m29gt320vpm5m29gb320vp PDF