48MINI Search Results

15ha3

Abstract: IS63WV1024BLL IS63WV1024BLL-12HI IS63WV1024BLL-12HLI IS63WV1024BLL-12JI IS63WV1024BLL-12TI IS63WV1024BLL-12TLI IS64WV1024BLL
Contextual Info: IS63WV1024BLL IS64WV1024BLL 128K x 8 HIGH-SPEED CMOS STATIC RAM JANUARY 2010 FEATURES DESCRIPTION • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V – 3.6V • High-performance, low-power CMOS process • CMOS Low Power Operation 50 mW typical operating current

Contextual Info: High Speed Super Low Power SRAM CS16LV40963 256k word x 16 bit „ DESCRIPTION The CS16LV40963 is a high performance, high speed, low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits and operates from a wide range of 2.7 to 3.6V supply voltage. Advanced CMOS technology and circuit techniques

IS63WV1024BLL

Contextual Info: IS63WV1024BLL IS64WV1024BLL 128K x 8 HIGH-SPEED CMOS STATIC RAM MAY 2012 FEATURES DESCRIPTION • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V – 3.6V • High-performance, low-power CMOS process • CMOS Low Power Operation 50 mW typical operating current

IS61WV1288EEBLL

Contextual Info: IS61WV1288EEBLL IS64WV1288EEBLL 128K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC MARCH 2014 DESCRIPTION The ISSI IS61/64WV1288EEBLL is a high-speed, FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW typical • Low Standby Power: 7 mW (typical)

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

Contextual Info: IS63WV1288DALL/DALS IS63WV1288DBLL/DBLS IS64WV1288DBLL/DBLS 128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: IS63/64WV1288DALL/DBLL • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 µW (typical)

DBLL

Abstract: IS63WV1288DBLL
Contextual Info: IS63WV1288DALL/DALS IS63WV1288DBLL/DBLS IS64WV1288DBLL/DBLS 128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: IS63/64WV1288DALL/DBLL • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 µW (typical)

CS26LV16163

Contextual Info: Low Power Pseudo SRAM CS26LV16163 1M word x 16 bit „ Description The CS26LV16163 is a high performance, high speed, low power pseudo SRAM organized as 1, 0487,576 words by 16 bits and operates from a wide range of 2.7 to 3.3V supply voltage. Advanced DRAM technology and circuit techniques provide both high speed

CS18LV40963CI

Abstract: CS18LV40963D
Contextual Info: High Speed Super Low Power SRAM 512k word x 8 bit CS18LV40963 „ DESCRIPTION The CS18LV40963 is a high performance, high speed, low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a wide range of 2.7 to 3.6V supply voltage. Advanced CMOS technology and circuit techniques

IS61WV1288EEBLL

Abstract: 128kx4
Contextual Info: IS61WV1288EEBLL IS64WV1288EEBLL 128K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC NOVEMBER 2012 DESCRIPTION The ISSI IS61/64WV1288EEBLL is a high-speed, FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW typical • Low Standby Power: 7 mW (typical)

Contextual Info: IS61WV1288EEBLL IS64WV1288EEBLL 128K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC NOVEMBER 2012 DESCRIPTION The฀ ISSI฀ IS61/64WV1288EEBLL฀ is฀ a฀ ฀ high-speed,฀ FEATURES •฀ High-speed฀access฀time:฀8,฀10฀ns •฀ Low฀Active฀Power:฀85฀mW฀ typical

IS63WV1288DALL

Contextual Info: IS63WV1288DALL/DALS IS63WV1288DBLL/DBLS IS64WV1288DBLL/DBLS 128K x 8 HIGH-SPEED CMOS STATIC RAM PRELIMINARY INFORMATION FEBRUARY 2010 FEATURES HIGH SPEED: IS63/64WV1288DALL/DBLL • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical)

15ha3

Abstract: IS63WV1024BLL IS63WV1024BLL-12HI IS63WV1024BLL-12HLI IS63WV1024BLL-12JI IS63WV1024BLL-12TI IS63WV1024BLL-12TLI IS64WV1024BLL
Contextual Info: ISSI IS63WV1024BLL IS64WV1024BLL 128K x 8 HIGH-SPEED CMOS STATIC RAM MAY 2006 FEATURES DESCRIPTION • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V – 3.6V • High-performance, low-power CMOS process • CMOS Low Power Operation 50 mW typical operating current

IS63WV1288DBLL-10HI

Abstract: IS63WV1288DBLL-10H
Contextual Info: IS63WV1288DALL/DALS IS63WV1288DBLL/DBLS IS64WV1288DBLL/DBLS 128K x 8 HIGH-SPEED CMOS STATIC RAM PRELIMINARY INFORMATION FEBRUARY 2010 FEATURES HIGH SPEED: IS63/64WV1288DALL/DBLL • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical)

Contextual Info: High Speed Super Low Power SRAM 128k Word By 16 bit CS16LV20483 „ DESCRIPTION The CS16LV20483 is a high performance, high speed, low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.7 to 3.6V supply voltage. Advanced CMOS technology and circuit techniques

Contextual Info: Low Power Pseudo SRAM CS26LV32163 2 M word x 16 bit „ Description The CS26LV32163 is a high performance, high speed, low power pseudo SRAM organized as 2,097,152 words by 16 bits and operates from a wide range of 2.7 to 3.3V supply voltage. Advanced DRAM technology and circuit techniques provide both high speed

Contextual Info: IS63WV1288DALL/DALS IS63WV1288DBLL/DBLS IS64WV1288DBLL/DBLS 128K x 8 HIGH-SPEED CMOS STATIC RAM PRELIMINARY INFORMATION AUGUST 2009 FEATURES HIGH SPEED: IS63/64WV1288DALL/DBLL • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical)

Contextual Info: AMIC TECHNOLOGY Taiwan , INC. Spec. No. : 04-83-002 Update : 12/17/1999 Pages : 1 of 9 TAPE&REEL PACKING SPECIFICAITON 1. Packing Procedures 2. Carrier Tape Dimensions - 28SOP,26/28SOJ,28TSOP,32sTSOP 3. Carrier Tape Dimensions - 32/40/44SOP,32/40SOJ,32/44/50TSOP,100QFP

Contextual Info: IS63WV1288DALL/DALS IS63WV1288DBLL/DBLS IS64WV1288DBLL/DBLS 128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: IS63/64WV1288DALL/DBLL • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 µW (typical)

Contextual Info: High Speed Super Low Power SRAM CS16LV81923 512k Word By 16 bit „ DESCRIPTION The CS16LV81923 is a high performance, high speed, low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits and operates from a wide range of 2.7 to 3.6V supply voltage. Advanced CMOS technology and circuit techniques