4891 TRANSISTOR Search Results

MU4893

Abstract: MU4894 MU4891 MU4892 EB20 unijunction application note 100-C
Contextual Info: MU4891 silicon thru MU4894 SILICON A N N U LA R PLASTIC U N IJU N C TIO N TRANSISTORS PN UNIJUNCTION TRANSISTORS . . . designed for military and industrial use in pulse, timing, triggering, sensing, and oscillator circuits. The annular process provides low leakage current, fast switching and low peak-point

4018 datasheet

Abstract: ic 4018 4891 TRANSISTOR TS16949 ZXTN2040F ZXTP2041F ZXTP2041FTA ZXTP2041FTC marking 312 SOT23 zetex
Contextual Info: A Product Line of Diodes Incorporated ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTN2040F Description This transistor combines high gain, high current operation and low saturation voltage making it

Contextual Info: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it

TS16949

Abstract: ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F N38 transistor 443-813
Contextual Info: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it

Contextual Info: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it

complementary npn-pnp power transistors

Abstract: sot23 npn-pnp SOT23-6, complementary medium power transistors SOT23-6, complementary transistors
Contextual Info: A Product Line of Diodes Incorporated ZXTC2061E6 12V, SOT23-6, complementary medium power transistors Summary BVCEO > 12 -12 V hFE > 500 IC(cont) = 5 (-3.5)A VCE(sat) < 40 (-70)mV @ 1A RCE(sat) = 25 (45)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to

DIODES 11W

Contextual Info: A Product Line of Diodes Incorporated ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve

TS16949

Abstract: ZXTP03200BG ZXTP03200BGTA marking sot223 GY
Contextual Info: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state

Contextual Info: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state

PNP 200V 2A SOT89

Abstract: TS16949 ZXTP03200BZ ZXTP03200BZTA cont base 28 SOT89 transistor marking 5A
Contextual Info: ZXTP03200BZ 200V PNP Low VCE sat transistor in SOT89 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 130mΩ PD = 2.4W Description Packaged in the SOT89 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state

Contextual Info: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state

3554M

Contextual Info: A Product Line of Diodes Incorporated ZXTC2062E6 20V, SOT23-6, complementary medium power transistors Summary BVCEO > 20 -20 V BVECO > 5 (-4)V IC(cont) = 4 (-3.5)A VCE(sat) < 50 (-65)mV @ 1A RCE(sat) = 35 (54)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to

4891 TRANSISTOR

Abstract: transistor MOSFET 924 ON 4892 mosfet p60n
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M T P 60 N 06 H D HDTMOS E-FET ™ Power Field Effect Transistor M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOSPOWER FET 60 AMPERES 60 VOLTS RDS on = 0014 OHM This advanced h ig h -c e ll density HDTMOS power FET is

401745

Abstract: cel 9200 CY7C1019BV33 CY7C1021BV33 8361H 84 FBGA thermal
Contextual Info: Cypress Semiconductor Product Qualification Report QTP# 000505 VERSION 2.0 November, 2000 1 Meg Fast Asynchronous SRAM R52FD-3 Technology, Fab 4 CY7C1021BV33 CY7C1019BV33 64K x 16 Static RAM 128K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:

Contextual Info: ZXLD381EV1 USER GUIDE Description The ZXLD381 is a single or multi cell LED driver designed for applications requiring step-up voltage conversion from a very low input voltage and on/off enable control. The IC generates constant current pulses that are ideal for driving

Contextual Info: ZXCT1032EV1 USER GUIDE Figure 1 Evaluation board components' layout DESCRIPTION The ZXCT1032EV1 provides a very convenient means for evaluating the capabilities of the ZXCT1032 current monitor. The ZXCT1032 is a high-side current monitor that drives a PMOS or PNP transistor to provide in-rush

A88L

Abstract: WSR3R0500FEA
Contextual Info: Designed and produced by Diodes Zetex Applications team, Oldham, UK ZXLD1370EV3 EVALUATION BOARD USER GUIDE 9 AMP HIGH CURRENT BUCK LED DRIVER APPLICATION Fig. 1 ZXLD1370EV3 Evaluation board connection diagram Issue 1 – February 2011 Diodes Incorporated, 2011

Contextual Info: ZXLD1374EV1 BUCK LED DRIVER USER GUIDE 0-1.5A DC DVM GND 8-48V 2A DC PSU 1 - 15 LEDs 1.5A 4.5V 0 – 4.5V Status steps 0V Open Drain output 2.5V = 200% 125mV = 10% -t° Thermal connection Fig. 1 ZXLD1374EV1 Evaluation board connection diagram Issue 1 – September 2010

GD 241 C

Contextual Info: ZXLD1370EV1 BUCK LED DRIVER USER GUIDE 0-1.5A DC DVM GND 8-48V 2A DC PSU 1 - 15 LEDs 1.5A 4.5V 0 – 4.5V Status steps 0V Open Drain output 2.5V = 200% 125mV = 10% -t° Thermal connection Fig. 1 ZXLD1370EV1 Evaluation board connection diagram Issue 2 – Sept 2010

Contextual Info: 14-18 series-connected LEDs AL9910EV4 BUCK LED DRIVER USER GUIDE Fig. 1 AL9910EV4 Evaluation board connection diagram Issue 4 – June 2011 Diodes Incorporated, 2011 www.diodes.com AL9910EV4 DESCRIPTION The AL9910EV4 is an offline non-isolated LED driver Evaluaton board designed to work on both 115V and

led 230v application

Contextual Info: AL9910EV5 BUCK LED DRIVER USER GUIDE Fig. 1 AL9910EV5 evaluation board connection diagram Issue 3 – June 2011 Diodes Incorporated, 2011 www.diodes.com AL9910EV5 DESCRIPTION The AL9910EV5 is an offline non-isolated LED driver Evaluation board designed to work on both 115V and

Contextual Info: ZXSC400EV5 USER GUIDE DESCRIPTION The ZXSC400 is a voltage mode boost converter in a SOT23-6 package. The low feedback voltage VFB input allows the current in a chain of LEDs to be set accurately. The ZXSC400EV5 is designed to drive one or two 3W LEDs at a constant

Contextual Info: ZXSC310EV5 EVALUATION BOARD USER GUIDE DESCRIPTION The ZXSC310 is a single or multi cell The ZXSC310EV5 is configured as a LED driver in an SOT23-5 package. The buck-boost converter to drive a 1W LED use of an external switching BJT or from 3 NiCd/NiMH or Alkaline batteries.

Contextual Info: ZXSC400EV7 USER GUIDE DESCRIPTION The ZXSC400 is a voltage mode boost converter in a SOT23-6 package. The low feedback voltage VFB input allows the current in a chain of LEDs to be set accurately. The ZXSC400EV7 is designed to drive one or two 3W LEDs at a constant