488AQ Search Results

WQFN10

Abstract: 488AQ
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WQFN10, 1.4x1.8, 0.4P CASE 488AQ-01 ISSUE C DATE 19 JUN 2007 1 SCALE 5:1 D ÉÉ ÉÉ ÉÉ PIN 1 REFERENCE 2X 2X 0.15 C M1 E DETAIL A Bottom View Optional 0.15 C B EXPOSED Cu A 0.10 C 0.08 C A1 A1 A3 3 9X NOTES:

NLAS4717EPMTR2G

Abstract: NLAS4717EP MAX4717 NLAS4717EPFCT1G
Contextual Info: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.

NLAS5223

Abstract: NLAS5223L NLAS5223LMNR2G NLAS5223MNR2G WQFN10
Contextual Info: NLAS5223, NLAS5223L Ultra-Low 0.5 W Dual SPDT Analog Switch The NLAS5223 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, at VCC = 3.0 $ 0.3 V.

NLAS5223B

Abstract: NLAS5223BL NLAS5223BLMNR2G NLAS5223BMNR2G WQFN10 WQFN-10
Contextual Info: NLAS5223B, NLAS5223BL Ultra−Low 0.5 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, at VCC = 3.0 V.

Contextual Info: NLAS7222A High-Speed USB 2.0 480 Mbps DPDT Switch ON Semiconductor’s NLAS7222A series of analog switch circuits are produced using the company’s advanced sub−micron CMOS technology, achieving industry−leading performance. The NLAS7222A is a 2− to 1−port analog switch. Its wide

UQFN-10

Contextual Info: NLAS5223B, NLAS5223BL Ultra-Low 0.35 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.35 W, at VCC = 4.3 V.

Contextual Info: NS5A4684S Ultra-Low Resistance Dual SPDT Analog Switch The NS5A4684S is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.6 W.

Contextual Info: NS5A4684S Ultra-Low Resistance Dual SPDT Analog Switch The NS5A4684S is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.6 W.

405C

Abstract: NLAS7222A NLAS7222AMTR2G WQFN10
Contextual Info: NLAS7222A 3.3 V, Wide Bandwidth, 2− to −1−Port DPDT Switch with Enable ON Semiconductor’s NLAS7222A series of analog switch circuits are produced using the company’s advanced sub−micron CMOS technology, achieving industry−leading performance.

NLAS5223

Abstract: NLAS5223L NLAS5223LMNR2G NLAS5223MNR2G WQFN10
Contextual Info: NLAS5223, NLAS5223L Ultra−Low 0.5 W Dual SPDT Analog Switch The NLAS5223 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, at VCC = 3.0 $ 0.3 V.

UQFN-10

Abstract: UQFN-10 A3 UQFN-10 1.4 x 1.8 mm
Contextual Info: NLAS5223B, NLAS5223BL Ultra−Low 0.5 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, at VCC = 3.0 V.

Contextual Info: NLAS7222A High-Speed USB 2.0 480 Mbps DPDT Switch ON Semiconductor’s NLAS7222A series of analog switch circuits are produced using the company’s advanced sub−micron CMOS technology, achieving industry−leading performance. The NLAS7222A is a 2− to 1−port analog switch. Its wide

MAX4717

Abstract: NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP
Contextual Info: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.

UQFN-10

Abstract: NLAS5223B NLAS5223BL NLAS5223BLMNR2G NLAS5223BMNR2G NLAS5223BMUR2G UQFN10 WQFN10
Contextual Info: NLAS5223B, NLAS5223BL Ultra-Low 0.35 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub-micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra-Low RON of 0.35 W, at VCC = 4.3 V.

405C

Abstract: NLAS7222A NLAS7222AMTR2G NLAS7222AMUR2G
Contextual Info: NLAS7222A High−Speed USB 2.0 480 Mbps DPDT Switch ON Semiconductor’s NLAS7222A series of analog switch circuits are produced using the company’s advanced sub−micron CMOS technology, achieving industry−leading performance. The NLAS7222A is a 2− to 1−port analog switch. Its wide

NLAS7222A

Abstract: NLAS7222AMTR2G UQFN10 WQFN10 HSD17 UQFN-10
Contextual Info: NLAS7222A High-Speed USB 2.0 480 Mbps DPDT Switch ON Semiconductor's NLAS7222A series of analog switch circuits are produced using the company's advanced sub-micron CMOS technology, achieving industry-leading performance. The NLAS7222A is a 2- to 1-port analog switch. Its wide

Contextual Info: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.

4717EP

Contextual Info: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.

NLAS5223B

Abstract: NLAS5223BL NLAS5223BLMNR2G NLAS5223BMNR2G NLAS5223BMUR2G WQFN10 UQFN-10 UQFN-10 A3 UQFN-10 1.4 x 1.8 mm UQFN10
Contextual Info: NLAS5223B, NLAS5223BL Ultra−Low 0.5 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, at VCC = 3.0 V.

405C

Abstract: NLAS7222A NLAS7222AMTR2G NLAS7222AMUR2G
Contextual Info: NLAS7222A High−Speed USB 2.0 480 Mbps DPDT Switch ON Semiconductor’s NLAS7222A series of analog switch circuits are produced using the company’s advanced sub−micron CMOS technology, achieving industry−leading performance. The NLAS7222A is a 2− to 1−port analog switch. Its wide

Contextual Info: SLAS5223 Ultra-Low 0.5 W Dual SPDT Analog Switch The SLAS5223 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.5 W, at VCC = 3.0 $ 0.3 V.

488AT-01

Abstract: UQFN-10
Contextual Info: NLAS5223B, NLAS5223BL Ultra-Low 0.5 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub-micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra-Low RON of 0.5 W, at VCC = 3.0 V.

UQFN-10 A3

Abstract: NLAS7222
Contextual Info: NLAS7222B, NLAS7222C High-Speed USB 2.0 480 Mbps DPDT Switches ON Semiconductor's NLAS7222B and NLAS7222C are part of a series of analog switch circuits that are produced using the company's advanced sub-micron CMOS technology, achieving industry-leading

Contextual Info: NLAS5223B, NLAS5223BL Ultra-Low 0.35 W Dual SPDT Analog Switch The NLAS5223B is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring Ultra−Low RON of 0.35 W, at VCC = 4.3 V.