480UA Search Results

Contextual Info: Freescale Semiconductor Advance Information Document number: MC34708 Rev. 10.0, 2/2013 Power Management Integrated Circuit PMIC for i.MX50/53 Families 34708 The MC34708 is the Power Management Integrated Circuit (PMIC) designed specifically for use with the Freescale i.MX50 and i.MX53

725uA

Abstract: DIODE e2l
Contextual Info: EMC1423/EMC1424 1°C Temperature Sensor with Hardware Thermal Shutdown PRODUCT FEATURES Datasheet General Description Applications The EMC1423 and EMC1424 are high accuracy, low cost, System Management Bus SMBus temperature sensors. Advanced features such as Resistance Error

mdt10p621

Contextual Info: MDT10P621N AB 1. General Description -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static TMR0 : 8-bit real time clock/counter CMOS technology process to achieve higher speed and TMR1 : 16-bit real time clock/count smaller size with the low power consumption and high

Contextual Info: MDT10P72N AB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high

MDT10P62

Abstract: MDT10P
Contextual Info: MDT10P62 BB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed TMR0 : 8-bit real time clock/counter and smaller size with the low power consumption and

20MHZ

Abstract: 100nnn
Contextual Info: MDT10P621N AB 1. 概述 －TMR0，TMR1，TMR2 时钟 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 －PORTB＜7：4＞电平变化中断

LCD09

Abstract: MDT11P0122LQ11 R107H r11ah LCD05 DL05 MDT11P0122 LCD02 R89H DL050
Contextual Info: MDT11P0122 1. 概述 这个 8 位 EPROM 微控制器是由完全静态 CMOS 技术设计，集高速体积小、低功 耗和高抗干扰性一体的芯片。内存包括 4K MDT11P0122 的应用范围从发动机控制器， 高速自动电机（电车）到低电源遥控发射、接

MDT10P72

Abstract: DC MOTOR SPEED CONTROLLER
Contextual Info: MDT10P72 BB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high

MDT10P721

Abstract: 20MHZ
Contextual Info: MDT10P721 BB 1. 概述 －A／D 转换完成 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 －PORTB＜7：4＞电平变化中断

Contextual Info: MDT10P62N AB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed TMR0 : 8-bit real time clock/counter and smaller size with the low power consumption and

MDT10P621

Abstract: MDT10P
Contextual Info: MDT10P621 BB -PortB<7:4> interrupt on change -CCP,SCM 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip

20MHZ

Abstract: MDT10P62 MDT10P
Contextual Info: MDT10P62 BB .1. 概述 －CCP，SCM 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 2K 字节 EPROM 和 128 字节静态 RAM。 TMR0 : 8 位时钟／记数器

Contextual Info: FLM5359-18F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 43.0dBm Typ. • High Gain: G1dB = 8.5dB (Typ.) • High PAE: hadd = 35% (Typ.) • Low IM3 = -46dBc@Po = 32.0dBm • Broad Band: 5.3 to 5.9GHz • Impedance Matched Zin/Zout = 50ohm

MDT10P7401

Abstract: MDT10P7401L11 MDT10P7401P11 MDT10P7401Q11
Contextual Info: MDT10P7401 1. General Description A/D converter module: -8 analog inputs multiplexed into one A/D This EPROM-Based 8-bit micro-controller uses a fully static converter CMOS technology process to achieve higher speed and -10-bit resolution smaller size with the low power consumption and high

XC-0900-03S

Abstract: GSM-710 R-GSM-900 s41 230 CWPG ALM-1522 GSM-850 P-GSM-900 FR4 substrate 10GHz T-GSM-810
Contextual Info: ALM-1522 Low Noise High Gain, High Linearity Balanced LNA Module for 800MHz to 1.0GHz Application Note 5419 Introduction Avago Technologies’ ALM-1522 is a very low noise, high gain and high linearity dual amplifier module, operating from 800MHz to 1.0GHz. In the balanced configuration, the measured performances on the demonstration

2N3904

Abstract: MSOP-10
Contextual Info: EMC1423/EMC1424 1°C Temperature Sensor with Hardware Thermal Shutdown PRODUCT FEATURES Datasheet GENERAL DESCRIPTION The EMC1423 and EMC1424 are high accuracy, low cost, System Management Bus SMBus temperature sensors. Advanced features such as Resistance Error

MT3S20P

Contextual Info: MT3S20P 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S20P ○ VHF～UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=1.45dB 標準 (@ f=1GHz) • 高利得です。:|S21e|2=11dB(標準) (@ f=1GHz)

MT3S20R

Contextual Info: MT3S20R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.08 0.05 M A FEATURES 0.42 -0.05 +0.08 0.17 -0.07 Low Noise Figure:NF=1.45dB Typ. (@ f=1GHz) • High Gain:|S21e|2=12dB(Typ.) (@ f=1GHz)

MT3S22P

Abstract: T1600
Contextual Info: MT3S22P 東芝トランジスタ シリコンゲルマニウムNPNエピタキシャルプレーナ形 MT3S22P ○ VHF～UHF 帯 特 低雑音・低歪み増幅用 単位: mm 長 • 雑音特性が優れています。:NF=1.5dB 標準 (@ f=1GHz) • 高利得です。:|S21e|2=10.5dB(標準) (@ f=1GHz)

MT3S20P

Contextual Info: MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB Typ. (@f=1GHz) • High Gain: |S21e|2=11dB(Typ.) (@f=1GHz) Marking M U PW-Mini

Contextual Info: MT3S15TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S15TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 2 3 3 2 1. BASE 2. EMITTER 3. COLLECTOR T3 1 1 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: |S21e| =13.5 dB typ. (@ f=1 GHz)

gm 88

Abstract: f1640 ED-4701 FLM5964-35F
Contextual Info: FLM5964-35F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=45.5dBm Typ. ・High Gain: G1dB=9.0dB(Typ.) ・High PAE: ηadd=36%(Typ.) ・Broad Band: 5.9~6.4GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION

Contextual Info: MT3S19TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19TU VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm 2.1±0.1 2 3 T6 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain : |S21e| =13 dB typ. (@ f = 1 GHz) 0.166±0.05 Low-Noise Figure : NF = 1.5 dB (typ.) (@ f = 1 GHz)

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455