480FT Search Results

Contextual Info: P a r a d i g PDM44026 m 32K x 36 Fast CMOS Synchronous Static SRAM with Interleaved Burst Counter Features Description □ Interfaces directly with the i486 , Pentium™ processors 80,66, 60,50,40 MHz □ High Speed Access Times - Clock to data valid times:

Contextual Info: FUJITSU MICROELECTRONICS 4?E D 374T7Li5 0010017 1 • FHI cP May 1990 Edition 1.0 FUJITSU datasheet: M B81C84A-25/-35 CMOS 256K-BIT HIGH-SPEED SRAM 64K Words x 4 Bits High-Speed CMOS Static Random Access Memory & The Fujitsu MB81C84A is a 65,536 words x 4 bits static random access memory

j 5804

Abstract: DS75160A DS75160AN DS75161A DS75162A IEEE-488 general purpose interface bus M-971
Contextual Info: DS75160A/DS75161A/DS75162A NATL SEMICOND -CMEIIORY> IDE D | bSOllSb DDbEbSb □ I National Semiconductor ~T~ ¿T5.-3/ D S 7 5 1 60 A /D S 7 5 161A /D S 7 5 16 2A IE E E -4 8 8 G P IB T r a n s c e iv e r s General Description Features This family of high-speed-Schottky 8-channel bi-directional

7027a

Abstract: 7M206 7027-A
Contextual Info: Integrated Device Technology* Inc. 8K X 9 & 16K X 9 CEMOS PARALLEL IN-OUT FIFO MODULE FEATURES: • • • • • • • • • • • First-In/First-Out memory module 8K x 9 organization IDT7M205S 16K x 9 organization (1DT7M206S) High speed: 20ns (max.) access time

Contextual Info: MOSEL-VITELIC 4ûE D • ta3S33Tl 0 0 0 0 7 0 7 MOSEL T ■ HO MS6264A 8K x 8 High Speed CMOS Static RAM T -4 6 -2 3 -1 2 FEATURES DESCRIPTION • High spaed - 45/55 ns Max. The MOSEL MS6264A is a high performance, low power CMOS static RAM organized as 8192 words by 8 bits. The

JD25t

Abstract: DPJ 014 DPE45128S-300M A6626 ci cef BBUF
Contextual Info: DENSE-PAC MICROSYSTEMS 07E I D I aVSTMlS ODOOlöb 1 D e n se -P a c 32KX8S BASED M ic r o s y s t e m s , I n c . CMOS EEPROM FAMILY ~ 7 ^ V £ -/3 D E S C R IP T IO N : Th e Dense-Pac 32K X 8S family consists of C M O S +5V 32K X 8 Electrically Eraseable Programmable Read-Only

Contextual Info: DENSE-PAC MICROSYSTEMS 16 Megabit CMOS SRAM DPS512X32ML/DPS512X32MW PRELIMINARY DESCRIPTION: P IN -O U T D IA G R A M The DPS512X32ML/DPS512X32MW is a 512K x 32 high density, high-speed Static Random Access Memory SRAM module, intended for high performance computers and digital signal processing

Contextual Info: L7C197 2 5 6K x 1 Static RA M □ 256K x 1 Static R A M w ith Separate I / O , C h ip Select Pow erdow n □ A uto-P ow erd ow n D esign □ A dvanced C M O S T echnology □ H igh Sp eed — to 15 ns m axim um □ Low P ow er O peration A ctive: 165 m W typical at 35 ns

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: Semiconductor DS3667 National DS3667 TRI-STATE Bidirectional Transceiver General Description Features The DS3667 is a high-speed Schottky 8-channei bidirection­ al transceiver designed for digital information and communi­ cation systems. Pin selectable totem-pole/open collector

2148H

Abstract: 150a gto 2149H 2149H-2 2149H-3 2149HL 2149HL-3
Contextual Info: intèf 2149H 1024 x 4-BIT STATIC RAM 2149H-3 2149H-2 Max. Address Access Time ns Max. Chip Select Access Time (ns) Max. Active Current (mA) 45 20 Fast Chip Select Access Time—20ns Maximum 2149HL-3 2149HL 70 70 55 25 30 25 30 125 125 180 180 2149H 55 180

Contextual Info: HM621664HB Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-349A Z Rev. 1.0 Sep. 11, 1996 Description The HM621664HB is an asynchronous high speed static RAM organized as 64-kword x 16-bit. It realize high speed access time (15/20 ns) with employing 0.8 jJ.m CMOS process

Contextual Info: MB85402-30 MB85W2-40 FUJI 'S TS255-B88Y Nov. 1988 CMOS 16,384 Words x 16-Bit STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85402 is a fully decoded, CMOS Static random access memory module comprised of four MB81C75 devices mounted on a 36—pin ceramic board.

b8289

Abstract: MB8289-25 MB8289-35
Contextual Info: C M O S 2 9 4 9 1 2 -B IT ST A T IC R A N D O M A C C E SS MEM ORY FU JITSU MB8289-25 MB8289-35 April 1989 Edition 1.0 32K x 9-BIT S T A T IC R A N D O M A C C ESS M E M O R Y WITH P A R IT Y G E N E R A T O R A N D C H E C K E R The Fujitsu M B 8 2 8 9 is 3 2 7 6 8 words x 9 bits high speed static random access

MAX310

Abstract: MAX310CPE MAX310CWN MAX310EJE MAX310EPE MAX310EWN MAX311 MAX311s MAX311C/D
Contextual Info: / l / l / I X I / k l CMOS R F/V ideo M ultiplexers _ M axim 's MAX310 and MAX311 are CMOS m onolithic analog m ultiplexer/dem ultiplexers designed fo r use w ith signal frequencies ranging from DC through video. T he MAX310 is a 1-of-8 m ultiplexer w hile the

Contextual Info: L7C174 8K x 8 C ache-T ag Static RA M FEATURES □ 8K x 8 CM OS Static RA M w ith 8-bit Tag Com parison Logic □ High Speed A ddress-to-M A TCH — 12 ns m axim um □ H igh Speed Flash Clear □ High Speed Read A ccess Time — 12 ns m axim um □ Low Pow er O peration

Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA MCM62996 Product Preview 16K x 16 Bit Asynchronous Address Fast Static RAM The MCM62996 is a 262,144 bit static random access memory organized as 16,384 FN PACKAGE words of 16 bits, fabricated using Motorola's high-performance silicon-gate CMOS

ZZZ3

Contextual Info: PARADIGM 256K Static RAM 64K x 4-Bit PDM41258SA PDM41258LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 12,15, 20,2 5 ,3 5 ,4 5 , and 55ns □ Low power operation - PDM41258SA Active: 400mW typ. Standby: 150 mW (typ.)

Contextual Info: September 1990 Edition 2.0 FUJITSU DATA SHEET MB82B005-25/-35 1M-BIT HIGH-SPEED BiCMOS SRAM 256K Words x 4 Bits High-Speed BiCMOS Static Random Access Memory The Fujitsu MB82B005 is a 262,144 words x 4 bits static random access memory fabricated with a BiCMOS process technology. For lower power dissipation and higher

Contextual Info: 4 Megabit C M O S SRAM DPS128X32XP/XHP AD V A N C E D INFO RM ATIO N DESCRIPTION: The DPS128X32XP/XHP is a 68-pin surface mount module consisting of four 128K x 8 S R A M devices in plastic T SO P packages surface mounted on a FR-4 substrate. The module is available with either “J"-Leads or

CONTACTOR

Contextual Info: L7C162 1 6 K x 4 S t a t ic R A M FEATURES □ 16K x 4 Static RAM w ith Separate I/O and H igh Im pedance Write □ A uto-Powerdown Design □ A dvanced CMOS Technology □ High Speed — to 12 ns m aximum □ Low Pow er O peration Active: 325 mW typical at 25 ns

Contextual Info: Features • TTL/LVTTL-compatible, three-state I/O • Organization: 1 3 1 ,0 7 2 words x 8 bits • High speed • • • • - 1 0 / 1 2 / 1 5 / 2 0 ns address access tim e - 3 /3 /4 Z 5 ns output enable access time Low pow er consum ption available - Active:

Contextual Info: SN55116, SN75116, SN75117, SN75118, SN75119 DIFFERENTIAL LINE TRANSCEIVERS SLLS073D - MAY 1976 - REVISED MAY 1998 features common to all types additional features of the SN55116/SN75116 • Single 5-V Supply • Choice of Ceramic or Plastic Packages • 3-State Driver Output Circuitry

lN914

Abstract: i1N914 1N914 DS3667 DS3667N
Contextual Info: DS3667 National Semiconductor DS3667 TRI-STATE Bidirectional Transceiver General Description Features The DS3667 is a high-speed Schottky 8-channel bidirection­ al transceiver designed for digital information and communi­ cation systems. Pin selectable totem-pole/open collector