480A Search Results

IXFN520N075T2

Contextual Info: Preliminary Technical Information IXFN520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 75V 480A Ω 1.9mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions VDSS TJ = 25°C to 175°C

2982650

Contextual Info: Extract from the online catalog OV-24DC/480AC/5 Order No.: 2982650 Solid-state relay, for signal amplification and isolation of the control and load circuits, can be plugged in the solderable plug-in bases SIMAMS or with PCB connection for mounting directly onto the PCB, input:

1di480a

Abstract: 1DI-480A-055 M6 transistor
Contextual Info: 480A-055 480A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 高耐圧 高耐圧 High Voltagee 内臓 Including Free Wheeling Diode

Contextual Info: Preliminary Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 IXFN520N075T2 = = 75V 480A Ω 1.9mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings

bbc cs5

Abstract: E9AF 14A624-AA
Contextual Info: 12345676893ABC 123456789ABCA2DE7FC44A97 PL565-78 for 491.52 MHz Wireless Base Station VCXO Family PRODUCT DESCRIPTION FEATURES 2*94+68,C-895 C%34./480AC1/52635643C1-%1BC6C

1DI480A-055

Abstract: TRANSISTOR TZ T151 T810
Contextual Info: 1DI48OA-O55 480a /< 7 -i L— I * » - * * : Outline Drawings )U POWER TRANSISTOR MODULE : Features • ¡£5iJ/± High Voltage • 7 'J — >J 9*4 • A S O ^ '/ a ^' • Including Free W heeling Diode Excellent Safe.Operating Area Insulated Type : Applications

UTI03

Abstract: 1di480a 3A1T
Contextual Info: 1DI48OA-O55 480a l- ; : Outline Drawings u POWER TRANSISTOR MODULE I F e a tu re s • fiSiWEE High Voltage • 7 U — sfr-f l) >9*?4 it —K A iK • Including Free W heeling Diode ASO A’i7 £ i . '• Excellent Safe.Operating Area ! • JfiStT6 Insulated Type

Contextual Info: 12345676893ABC 123456789ABCA2DE7FC44A97 PL560/565-08 VCXO Family PRODUCT DESCRIPTION FEATURES 12 14 VDDOSC 15 L2X 16 Q P560/5-08 1 2 • >8#2+C34./480AC7/52635609268C8AC C • <83/2C34./480AC37C$D#DFFC1:7CC

transistor di 960

Abstract: 1DI480A-055 fuji 1di480a-055 480A IC-480A M105 1DI-480A-055 1di480a
Contextual Info: 480A-055 480A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： 高耐圧 高耐圧 High Voltagee 内臓 Including Free Wheeling Diode

mcc 6v8c

Abstract: marking CODE MCC SMBJP6KE150 DEVICE MARKING CODE 150A marking code 150a 16A marking code DO214AA SMBJP6KE16A
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features For surface mount applicationsin in or der to optimize board space Available in both unidirectional and bidirectional construction

47CA

Abstract: 1.5 33ca 440C 51a marking 350CA marking CODE 91A TP 170A 15CA diode 47c diode 6v8a
Contextual Info: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414 1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com P6SMB SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

IRGPS4067

Abstract: irgps4067d CI 4000 J500 IRGPS IRGPS4067DPBF
Contextual Info: PD - 97736 IRGPS4067DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features •         Low VCE on Trench IGBT Technology Low Switching Losses 5 s SCSOA Square RBSOA 100% of The Parts Tested for ILM 

S5 100 B112 MT RELAY

Abstract: CK 66 UL 94V-0 LCD sh 0357 94v-0 c225t F8212 panduit standoff RF based remote control robot circuit diagram of incubator D1148 burndy Y35 crimping tool manual
Contextual Info: ELECTRICAL SOLUTIONS A. System Overview Click on the logo above to go to www.panduit.com up to date product information find a local distributor technical information Section Index B1. Cable Ties A. System Overview B2. Cable Accessories B. Bundle B3. Stainless

Contextual Info: APTM100UM65SCAVG Single switch Series & SiC parallel diodes MOSFET Power Module D DK VDSS = 1000V RDSon = 65mΩ typ @ Tj = 25°C ID = 145A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies

Contextual Info: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp, DO5 Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics:

APTM120UM70DAG

Abstract: APT0502 APT0601 rg08
Contextual Info: APTM120UM70DAG Single switch with Series diodes MOSFET Power Module VDSS = 1200V RDSon = 70mΩ typ @ Tj = 25°C ID = 171A @ Tc = 25°C Application • Zero Current Switching resonant mode SK D DK DK S Benefits • Outstanding performance at high frequency operation

1.5SMC400CA

Abstract: 6v8a TS 4140 1.5SMC
Contextual Info: Transient Voltage Suppression Diodes Surface Mount – 1500W > 1.5SMC series 1.5SMC Series Description The 1.5SMC series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.

smb 440a

Abstract: 75CA 012 6V8A 130CA 6v8a marking code 82A 68CA 6V8C diode 6v8a DO214AA
Contextual Info: Silicon Avalanche Diodes 600W Surface Mount Transient Voltage Supressors P6SMBJ Series FEATURES • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction • Low inductance

APT0502

Abstract: APT0601 APTM100UM65DAG
Contextual Info: APTM100UM65DAG VDSS = 1000V RDSon = 65mΩ typ @ Tj = 25°C ID = 145A @ Tc = 25°C Single switch with Series diode MOSFET Power Module Application • Zero Current Switching resonant mode Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance

Contextual Info: 1.5SMCSeries Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AB SMC J-Bend Cathode Band 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) ed e* d n Extee Rang g a t l Vo V(BR) Unidirectional

D844 transistor

Abstract: D988 9031h d918 TRANSISTOR J 5804 D852 transistor D880 pin out 9426h transistor D886 d998 transistor
Contextual Info: OMAP5910 Dual-Core Processor Data Manual Literature Number: SPRS197C August 2002 − Revised November 2003 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

Contextual Info: STM8AF6x26/4x/66/68 Automotive 8-bit MCU, with up to 32 Kbytes Flash, data EEPROM, 10-bit ADC, timers, LIN, SPI, I2C, 3 to 5.5 V Datasheet - production data Features • Core – Max fCPU: 16 MHz – Advanced STM8A core with Harvard architecture and 3-stage pipeline

Contextual Info: P6SMB SERIES DATA SHEET TRANSIENT VOLTAGE SUPPRESSORS – P6SMB SERIES FEATURE For surface mounted applications in order to optimize board space. Low profile package. Built-in strain relief. Glass passivated junction. Low inductance. Excellent clamping capability.

K d998 transistor

Abstract: lz 02 1068 D844 voltage regulator
Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include