48-TSOP MEMORY Search Results

48-PIN

Abstract: LRS1338A 1338a2
Contextual Info: LRS1338A Data Sheet Stacked Chip 8M Flash Memory and 2M SRAM FEATURES PIN CONFIGURATION • Flash memory and SRAM • Stacked die chip scale package • 48-pin TSOP TSOP48-P-1014 plastic package 48-PIN TSOP TOP VIEW S-A16/F-A15 1 48 S-A17/F-A16 S-A15/F-A14

TSOP 48 socket

Contextual Info: SOCKETS/SOCKET TOOLS TESCO INTERNATIONAL ENPLAS TSOP Type I • ■ ■ ■ ■ Supports Intel Flash memory components 32, 40, and 48 pin TSOP PROM programming and test socket Ideal for automation/burn-in Zero insertion force Low profile ENPLAS’ open-top TSOP Type I series

MT28F004B5

Abstract: MT28F400B5 Micron 4Mb NOR FLASH MT28F400B5SG-8B
Contextual Info: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.3µm Process Technology FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks

Contextual Info: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V Only, Dual Supply Smart 3 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks

Contextual Info: 8Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F008B3 MT28F800B3 3V Only, Dual Supply Smart 3 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks

MT28F008B3

Abstract: MT28F800B3
Contextual Info: 8Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F008B3 MT28F800B3 3V Only, Dual Supply Smart 3 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks

MT28F002B3

Abstract: MT28F200B3
Contextual Info: 2Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F002B3 MT28F200B3 3V Only, Dual Supply Smart 3 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks

Contextual Info: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks

MT28F002

Abstract: MT28F200B5SG-6B MT28F002B5 MT28F200B5
Contextual Info: 2Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F002B5 MT28F200B5 5V Only, Dual Supply Smart 5 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks

AS6C1616

Abstract: TSOPI
Contextual Info: APRIL 2010 AS6C1616 1024K X 16 BIT LOW POWER CMOS SRAM PACKAGE OUTLINE DIMENSION 48-pin 12mm x 20mm TSOP-I Package Outline Dimension APRIL/2010 V1.b ALLIANCE MEMORY

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE -70/90/12 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE -70/90/12 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA

MBM29LV160TE70

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (1), 48-pin CSOP and 48-ball FBGA

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

CSR2930800BA

Abstract: FPT-48P-M19
Contextual Info: Rev. 1.1 FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT CSR2930800BA-90 • DESCRIPTION The CSR2930800BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. TheCSR2930800BA are offered in a 48-pin TSOP(I), 44-pin SOP, and 48-ball FBGA packages.

SpecTek flash

Contextual Info: SpecTek Confidential and Proprietary Advance‡‡ 4Gb through 16Gb x8 M40A Features NAND Flash Memory FNNM40A Features Figure 1: 48-Pin TSOP Type 1 • Single-level cell SLC technology • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes)

Contextual Info: SpecTek Confidential and Proprietary Advance‡‡ 4Gb through 16Gb x8 M40A Features NAND Flash Memory FNNM40A Features Figure 1: 48-Pin TSOP Type 1 • Single-level cell SLC technology • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes)

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE0.1E FLASH MEMORY CMOS 16 M 2M x 8/1M × 16 BIT MirrorFlashTM MBM29LV160TM/BM 90 n DESCRIPTION The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(I) and 48-ball FBGA. The device is designed to

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE0.2E FLASH MEMORY CMOS 16 M 2M x 8/1M × 16 BIT MirrorFlashTM MBM29LV160TM/BM 90 n DESCRIPTION The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(I) and 48-ball FBGA. The device is designed to

Contextual Info: ADVANCE FLASH MEMORY MT28F800A3 FEATURES PIN ASSIGNMENT Top View 48-Pin TSOP Type I • Twenty-three erase blocks: Two 4K-word boot blocks (protected) Six 4K-word parameter blocks Fifteen 32K-word main memory blocks • Smart 3 voltage flexibility: 2.7V to 3.6V Vcc

SUPER CHIP

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-5E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LV800TA-70/-90/MBM29LV800BA-70/-90 • DESCRIPTION The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(I), 44-pin SOP, and 48-ball FBGA

48-pin TSOP I flash memory

Abstract: 48-pin TSOP (I) flash memory LRS1306 48 tsop flash pinout transistor a6 s 48-PIN sharp sa10
Contextual Info: PRODUCT INFORMATION LRS1306 Stacked Chip APPLICATIONS: Pager PDA Set Top Box Cellular Phone Integrated Circuits Group 48-PIN TSOP PINOUT FEATURES • • • • • • • • • • • • 8M Flash and 2 M SRAM Flash memory access time 120 ns MAX.