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C47V5864 Abstract: 817 CN C47V GF53 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> 47V5864 5 . 8 - 6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G FC 47V5864 device is an internally impedance-matched Unit : millimeters GaAs power FET especially designed for use in 5.8 ~ 6 .4 G H z	OCR Scan	mgfc47v5864 47v5864 47dbm transm30 +4c47v5864 817 cn c47v gf53	PDF

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C47V5864

Abstract: 817 CN C47V GF53
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> 47V5864 5 . 8 - 6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G FC 47V5864 device is an internally impedance-matched Unit : millimeters GaAs power FET especially designed for use in 5.8 ~ 6 .4 G H z

OCR Scan

mgfc47v5864 47v5864 47dbm transm30 +4

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