47S MARKING Search Results

marking 47s

Contextual Info: BAS 40-07W Silicon Schottky Diode • General-purpose diode for high-speed switching 3 • Circuit protection 4 • Voltage clamping • High-level detecting and mixing 2 1 VPS05605 4 1 3 2 EHA07008 Type Marking BAS 40-07W 47s Pin Configuration 1=C1 2=C2 3=A2

BAS40-07W

Contextual Info: BAS40-07W 3 Silicon Schottky Diode 4
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping 2
High-level detection and mixing 4 1 3 2 1 VPS05605 EHA07008 Type BAS40-07W Marking Pin Configuration 47s 1=C1 2=C2 3=A2 4=A1 -

transistor marking 47s

Abstract: VPS05178 BAS40-07 A1 SOT143
Contextual Info: BAS40-07 Silicon Schottky Diode 3
General-purpose diode for high-speed switching
Circuit protection 4
Voltage clamping
High-level detecting and mixing 2 1 VPS05178 BAS40-07 4 1 3 2 EHA07008 Type Marking BAS40-07 47s Pin Configuration 1=C1 2=C2 3=A2

diode 4007

Abstract: VPS05178
Contextual Info: BAS 40-07 Silicon Schottky Diode 3 • General-purpose diode for high-speed switching • Circuit protection 4 • Voltage clamping • High-level detecting and mixing 2 1 VPS05178 BAS 40-07 4 1 3 2 EHA07008 Type Marking BAS 40-07 47s Pin Configuration 1=C1

transistor marking 47s

Abstract: 2SK1382 60AS D100N TC320
Contextual Info: TOSHIBA 2SK1382 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSIII 2 S K 1 382 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS • 4V Gate Drive • Low Drain-Source ON Resistance • High Forward Transfer Admittance : |Yfs | = 47S (Typ.)

V100SM8

Abstract: V12SM8 V18SM8 V22SM8 V27SM8 V33SM8 V39SM8 V47SM8 V56SM8 V68SM8
Contextual Info: G E SOLID STATE 01 Ô Ë J 3 Û 7 S D Û 1 OOILTBT 7 T T'//'Z5 SURFACE-MOUNT VARISTORS SM SERIES RATINGS AND CHARACTERISTICS TABLE: SM8 5 x 8mm (See page 9-30 for dimension drawing) SM8 SERIES (Equivalent to 7mm Radial) Device Marking V-(W V8SM8 V12SM8 V18SM8

K2094

Abstract: marking 82T 0014b34 2SK2094 2SK2094F5
Contextual Info: 2SK2094F5 Silicon N-channel MOSFET Features Dimensions Units : mm • available in C P T F5 package • p ackage marking: K2094-A-Q, w here ★ is hFE code and □ is lot num ber • low on-resistance 2SK2094 (C PT F5) • fast switching speed • w ide S O A (S a fe O perating A rea)

BAS 20 SOT23

Abstract: 44s sot23 BAS40 sot323 transistor marking 44s BAS140W BAS40-02L BAS40-04 BAS40-05 BAS40-05W BAS40-06
Contextual Info: BAS40./BAS140W Silicon Schottky Diode
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing BAS140W BAS40-02L BAS40 BAS40-04 3 1 3 2 1 BAS40-05 BAS40-05W 2 BAS40-06 BAS40-06W 3 D 1 D 2

BAS140W

Abstract: BAS40 BAS40-02L BAS40-04 BAS40-05 BAS40-05W BAS40-06 BAS40-06W BAS40-07
Contextual Info: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS140W BAS40-02L BAS40 BAS40-04 3 1 3 2 1 BAS40-05 BAS40-05W 2 BAS40-06 BAS40-06W 3

Contextual Info: BAS40./BAS140W Silicon Schottky Diode
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing BAS140W BAS40-02L BAS40 BAS40-04 3 1 3 2 1 BAS40-05 BAS40-05W 2 BAS40-06 BAS40-06W 3 D 1 D 2

Contextual Info: NPN GENERAL PURPOSE DUAL TRANSISTOR VOLTAGE 45 Volts POWER 150 mWatts FEATURES • General purpose amplifier applications • PNP epitaxial silicon, planar design • MECHANICAL DATA • Case: SOT-363, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026

BAS40

Abstract: BAS40-06 BAS140W BAS40-02L BAS40-04 BAS40-05 BAS40-05W BAS40-06W BAS40-07 marking 45s
Contextual Info: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS140W BAS40-02L BAS40 BAS40-04 ! BAS40-05 BAS40-05W !  ,   BAS40-06 BAS40-06W !

VPS05605

Abstract: transistor marking 47s bas 44 marking 47s
Contextual Info: BAS 40-07W Silicon Schottky Diode Preliminary data 3 • General-purpose diode for high-speed switching 4 • Circuit protection • Voltage clamping • High-level detecting and mixing • Available with CECC quality assessment 2 1 VPS05605 BAS 40-07W Type

smd diode marking 47s

Abstract: transistor marking 47s smd diode marking 1P smd marking 47s diode K 345 Schottky Diode smd rf transistor marking BAS40-07W diode 345
Contextual Info: Diodes SMD Type Silicon Schottky Diode BAS40-07W SOT-343 Unit: mm Features General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing A bsolute M axim um R atings T a = 25 P aram eter D iode reverse voltage

ADF08SATTR04

Abstract: adf04s04 ADF03SAT04 ADF08ST04 ADF03STR04
Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL C O P Y R IG H T 1825059 BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S 1825059 , 1825059 RESERVED. C O R P O R A T IO N . D C H 2.54 [.1 0 0 ] TYP A AMP 1471-9 REV 31MAR2000

Contextual Info: SIEMENS BAS 40-07W Silicon Schottky Diode Preliminary data • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Available with CECC quality assessment BAS 40-07W °— 4 M N—

Contextual Info: Product specification BAS40-07W SOT-343 Unit: mm Features General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing A bsolute M axim um R atings T a = 25 P aram eter D iode reverse voltage F orward current

Q62702-D979

Abstract: 44S marking code Q62702-D980 44S DIODE Q62702-D1314 44s SOT23-3 DIODE 4004 BAS 20 SOT23 46s sot23 marking 47s
Contextual Info: SIEMENS Silicon Schottky Diodes • • • • 6 BAS 40 . General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Available with CECC quality assessment ESD: Electrostatic discharge sensitive device, observe handling precautions!

DIN 6784

Abstract: BAS140W 47S MARKING
Contextual Info: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS140W BAS40-02L BAS40 BAS40-04 ! BAS40-05 BAS40-05W !  ,   BAS40-06 BAS40-06W !

Contextual Info: 2 LOC D IS T AD R E V IS IO N S P LTR D E S C R IP T IO N A4 REVISED PER E C O - 1 1 - 0 2 1 641 DATE 09NO V11 DWN APVD KH PO SPECIFICATIONS: MATERIAL BASE, P P S ,U L 9 4 V —0, BLACK COVER, PPS, U L 9 4 V - 0 , BLACK ACTUATOR, PA6T, U L 9 4 V - 0 , WHITE

marking 47s

Abstract: ja diode EHA07008 47S MARKING
Contextual Info: SIEMENS BAS 40-07W Silicon Schottky Diode Preliminary data • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Available with CECC quality assessment BAS 40-07W 4 M |.

BAS140W

Abstract: BAS40 BAS40-02L BAS40-04 BAS40-05 BAS40-05W BAS40-06 BAS40-06W
Contextual Info: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS140W BAS40-02L

Contextual Info: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Pb-free RoHS compliant package • Qualified according AEC Q1011) BAS140W BAS40-02L

d979

Abstract: transistor marking 47s D339 diode marking 515 DIODE BAS JS v Q62702-D978 D1314 d1314 marking 44S DIODE Q62702-D979
Contextual Info: Silicon Schottky Diodes ● ● ● ● ● BAS 40 … General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Available with CECC quality assessment ESD: Electrostatic discharge sensitive device, observe handling precautions!