47S MARKING Search Results

marking 47s

Contextual Info: BAS 40-07W Silicon Schottky Diode • General-purpose diode for high-speed switching 3 • Circuit protection 4 • Voltage clamping • High-level detecting and mixing 2 1 VPS05605 4 1 3 2 EHA07008 Type Marking BAS 40-07W 47s Pin Configuration 1=C1 2=C2 3=A2

BAS40-07W

Contextual Info: BAS40-07W 3 Silicon Schottky Diode 4
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping 2
High-level detection and mixing 4 1 3 2 1 VPS05605 EHA07008 Type BAS40-07W Marking Pin Configuration 47s 1=C1 2=C2 3=A2 4=A1 -

transistor marking 47s

Abstract: VPS05178 BAS40-07 A1 SOT143
Contextual Info: BAS40-07 Silicon Schottky Diode 3
General-purpose diode for high-speed switching
Circuit protection 4
Voltage clamping
High-level detecting and mixing 2 1 VPS05178 BAS40-07 4 1 3 2 EHA07008 Type Marking BAS40-07 47s Pin Configuration 1=C1 2=C2 3=A2

diode 4007

Abstract: VPS05178
Contextual Info: BAS 40-07 Silicon Schottky Diode 3 • General-purpose diode for high-speed switching • Circuit protection 4 • Voltage clamping • High-level detecting and mixing 2 1 VPS05178 BAS 40-07 4 1 3 2 EHA07008 Type Marking BAS 40-07 47s Pin Configuration 1=C1

K2094

Abstract: marking 82T 0014b34 2SK2094 2SK2094F5
Contextual Info: 2SK2094F5 Silicon N-channel MOSFET Features Dimensions Units : mm • available in C P T F5 package • p ackage marking: K2094-A-Q, w here ★ is hFE code and □ is lot num ber • low on-resistance 2SK2094 (C PT F5) • fast switching speed • w ide S O A (S a fe O perating A rea)

Contextual Info: NPN GENERAL PURPOSE DUAL TRANSISTOR VOLTAGE 45 Volts POWER 150 mWatts FEATURES • General purpose amplifier applications • PNP epitaxial silicon, planar design • MECHANICAL DATA • Case: SOT-363, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026

smd diode marking 47s

Abstract: transistor marking 47s smd diode marking 1P smd marking 47s diode K 345 Schottky Diode smd rf transistor marking BAS40-07W diode 345
Contextual Info: Diodes SMD Type Silicon Schottky Diode BAS40-07W SOT-343 Unit: mm Features General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing A bsolute M axim um R atings T a = 25 P aram eter D iode reverse voltage

Contextual Info: BAS40./BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Pb-free RoHS compliant package • Qualified according AEC Q1011) BAS140W BAS40-02L

Contextual Info: Product specification BAS40-07W SOT-343 Unit: mm Features General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing A bsolute M axim um R atings T a = 25 P aram eter D iode reverse voltage F orward current

marking 47s

Abstract: ja diode EHA07008 47S MARKING
Contextual Info: SIEMENS BAS 40-07W Silicon Schottky Diode Preliminary data • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Available with CECC quality assessment BAS 40-07W 4 M |.

DIODE 4004

Abstract: diode 4007 Q62702-D980 diode marking 515 44S DIODE Q62702-D339 Q62702-D978 Q62702-D979 MARKING 720 SOT23 4004 diode
Contextual Info: Silicon Schottky Diodes BAS 40 … General-purpose diodes for high-speed switching ● Circuit protection ● Voltage clamping ● High-level detecting and mixing Available with CECC quality assessment ● 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precautions!

DIODE 4004

Abstract: Q62702-D980 D1314 d339 transistor marking 47s Q62702-D339 Q62702-D978 Q62702-D979 44S marking code 45s MARKING CODE
Contextual Info: Silicon Schottky Diodes BAS 40 … General-purpose diodes for high-speed switching ● Circuit protection ● Voltage clamping ● High-level detecting and mixing Available with CECC quality assessment ● ESD: Electrostatic discharge sensitive device, observe handling precautions!

ADF02S04

Contextual Info: 4 T H IS D R AW IN G IS U N P U B L IS H E D . C O PYRIG H T 1825059 3 R E LE A S E D FOR P U B LIC A T IO N BY TYCO ELEC TR O N IC S CO RPO RATIO N . 1825059 , 1825059 A LL R IG H T S R E S E R V E D . D C H 2 .5 4 [. 100 ] TYP A AMP 1 47 1-9 REV 31MAR2000

SENSOR HALL 452

Abstract: hall 452 DN6849 DN6849S DN6849SE DN6849TE 175 hall sensor L050L
Contextual Info: Panasonic Hall ICs DN6849/SE/TE/S Hall 1C Operating Temperature Range Topr=—40 to+100°C, Operating in One Way Magnetic Field Overview • Overview The DN6849/SE/TE/S is a combination of a Hall ele­ ment, amplifier, Schmitt circuit, and stabilized power sup­

Contextual Info: BZT52C2V4S ~ BZT52C75S SURFACE MOUNT ZENER DIODE Features Planar Die Construction Ultra-Small Surface Mount Package Ideally suited for Automated Assembly Processes SOD-323 K E A C 1 Mechanical Data 2 B D Case: SOD-323, Plastic Case material - UL Flammability Rating

Contextual Info: BAS19 BAS20 BAS21 tbS3^31 002M270 7bb • APX N A HER PHILIPS/DISCRETE b7E ]> y v SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES Silicon epitaxial high-speed diodes in a microminiature plastic envelope. They are intended for switching and general purposes. QUICK REFERENCE DATA

Contextual Info: TOSHIBA 2SK1382 T O S H IB A FIELD EFFECT TRA N SISTO R SILICON N C H A N N EL M O S TYPE L2-7t-MOSIII 2 S K 1 382 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS • • • • • U n it in mm

Contextual Info: TOSHIBA 2SK1382 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSIII 2 S K 1 382 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS Unit in mm 4V Gate Drive

smd diode marking 47s

Abstract: S41 rectifier smd marking 47s smd code marking sot23 Micro6 Package smd diode marking JJ sot23 G0A marking SMD MOSFET N Z4 lm 5532
Contextual Info: PD 9.1414A International IO R Rectifier IR L M S 6702 PRELIMINARY H EXFET Pow er M O S F E T • Generation V Technology • Micro6 Package Style • Ultra Low Rds on • P-Channel MOSFET V q ss = -2 0 V R DS(on) = 0 . 2 0 Q Description Fifth Generation HEXFETs from International Rectifier

V430MA7B

Abstract: V220MA2A V120MA2B V68MA3B V*MA2A V33MA1A V18MA1A V18MA1B V18MA1S V22MA1A
Contextual Info: MA Series S E M I C O N D U C T O R Axial Lead Metal-Oxide Varistors March 1995 Features • 3mm Diameter Disc Size • Wide Operating Voltage Range VM AC RMS . . . . . . . . . . . . . 9V to 264V • Available in Tape and Reel Packaging for Use With Automatic

Contextual Info: PD-9.1012 In tern atio n al io r R e c tifie r IRF830S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431016L 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description The //PD431016L is a high speed, lo w pow er, 1, 048, 576 b its 65, 536 w o rd s by 16 b its CMOS s ta tic RAM. O p e ra tin g s u p p ly vo lta g e is 3.3 V ± 0.3 V.

TPDxF003

Abstract: TPD8F003
Contextual Info: TPD4F003, TPD6F003, TPD8F003 www.ti.com SLLS907D – AUGUST 2008 – REVISED JANUARY 2010 FOUR-, SIX-, AND EIGHT-CHANNEL EMI FILTERS WITH INTEGRATED ESD PROTECTION Check for Samples: TPD4F003, TPD6F003, TPD8F003 FEATURES 1 • • • • • • Four-, Six-, and Eight-Channel EMI Filtering for

TPD8F003

Abstract: TPD8F003DQD transistor marking 47s TPD4F003 TPD6F003 TPD8F003DQDR ch7i
Contextual Info: TPD4F003, TPD6F003, TPD8F003 www.ti.com SLLS907D – AUGUST 2008 – REVISED JANUARY 2010 FOUR-, SIX-, AND EIGHT-CHANNEL EMI FILTERS WITH INTEGRATED ESD PROTECTION Check for Samples: TPD4F003, TPD6F003, TPD8F003 FEATURES 1 • • • • • • Four-, Six-, and Eight-Channel EMI Filtering for