479E Search Results

Contextual Info: HL6319G/20G AlGaInP Laser Diodes ODE-208-479E Z Rev.5 Jan. 2003 Description The HL6319G/20G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.

Contextual Info: 479E Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current12 V(RRM)(V) Rep.Pk.Rev. Voltage250 t(rr) Max.(s) Rev.Rec. Time200n @I(F) (A) (Test Condition)1 @I(R) (A) (Test Condition)2 V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)12

HL6319G

Abstract: HL6320G opto device
Contextual Info: HL6319G/20G AlGaInP Laser Diodes ODE-208-479E Z Rev.5 Jan. 2003 Description The HL6319G/20G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.

AmSYS29

Abstract: RBS 3106 DEC PDP-11 F-11 MACRO8000 LT 5226 Z8000 RBS 6600 AM8085 RBS 2109 manual book Zilog cross reference
Contextual Info: Advanced Micro Devices AmZ8000 User’s Manual ^1 ^ i . R ra m 'e Y lectron Advanced Micro Devices AmZ8000 User’s Manual The International Standard of Quality guarantees these electrical AQLs on all parameters over the operating tempera­ ture range: 0.1% on MOS RAMs & ROMs;

Contextual Info: 56 12 34 1 123445611 1 566783693AB1CD3EDFED3D68969 3 1 1 BBA3 1 BB3EBADC1C3 1 -61 (* ./1 F61 48B6FB6501 -4-6+4#468#11 2-4B61D131"154%61(-611F615648651 +D1"1E4-B481F99E4#FB4D81 1(-6(*)./14B1#F81461A65124B-14DDB1D14A#$

Contextual Info: 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1234567869AB C2D8E523BDAFB2A2683B 1234 567894 A7B294 ACD4 7E4 9234 7F34 67897B294 E634 64 76E4 79768E4 23334 4 B347B294379978B4347E48694893F4 E9673F4 E69768E4 7924 69234 27E4 344