470 860 MHZ PCB Search Results

2322-211

Abstract: Wideband hybrid coupled amplifier 470 860 MHz "capacitor philips" capacitor philips NCO8101 stripline hybrid BLV57 NCO8201 NCO8205 A Wideband hybrid coupled amplifier 470 - 860 MHz
Contextual Info: APPLICATION NOTE A wide-band class-AB hybrid coupled amplifier 470 − 860 MHz with two balanced transistors BLV57 NCO8205 Philips Semiconductors A wide-band class-AB hybrid coupled amplifier Application Note (470 − 860 MHz) with two balanced transistors BLV57

MRF373

Abstract: RO3010 A419 MRF373 PUSH PULL C14A MRF373 print circuit P1210 MRF373S atc 174 BUY13
Contextual Info: MOTOROLA The RF MOSFET Line MRF373 MRF373S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 470 – 860 MHz, 60 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this

thermistor r5t

Abstract: chip resistor 1206 c19a S1239 MOTOROLA P C3B Kemet bc17a GX-0300-55 R7B Connector RO3010
Contextual Info: MOTOROLA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this

MOSFET J132

Abstract: mosfet J137 motorola 305 470 860 mhz PCB GX-0300-55 S1239 M2503
Contextual Info: MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this

RO3010

Abstract: Z14B C14A thermistor r5t MRF374 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device

MRF377H

Abstract: 470-860 mhz Power amplifier w nippon capacitors 08051J4R7BBS 0805J C182
Contextual Info: Freescale Semiconductor Technical Data RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF377HR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance

J239 mosfet transistor

Abstract: L1AB
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF374A Rev. 5, 5/2006 RF Power Field-Effect Transistor MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of

marking c14a

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of

marking c14a

Abstract: RO3010 mrf372 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of

marking c14a

Abstract: C14A C13B MRF374 MRF374A RO3010 C12A C12B Vishay Dale 10 ohm resistorS J352
Contextual Info: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

RF high POWER TRANSISTOR

Abstract: MRF6VP3091 AN1955 25C2240 MRF6VP3091N QAM data ATC100B201 MRF6VP3091NR1
Contextual Info: Document Number: MRF6VP3091N Rev. 0, 9/2011 Freescale Semiconductor Technical Data RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast

LDMOS DVB-T transistors

Abstract: T0272 MRF6VP3091N Rogers RO4350B 470 860 mhz application note RF high POWER TRANSISTOR
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 1, 12/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast

heraeus

Abstract: uhf pcb antenna VJ6040 WO2008154173 Heraeus PD 860002 SA
Contextual Info: VJ 6040 Vishay Vitramon VJ 6040 UHF Chip Antenna for Mobile Devices FEATURES • Small outline 10.5 mm x 15.5 mm x 1.2 mm • Omni-directional, linear polarization • Complies with MBRAI standard • Complete UHF band coverage (470 MHz to 860 MHz) up to 1.1 GHz

MRF373AR1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 1, 12/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast

RO3010

Abstract: marking c14a marking R5b device L1a marking L1A marking on device marking r4b diode C14A marking us capacitor pf l1 R4A print MRF372
Contextual Info: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

z14b

Abstract: RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this

Contextual Info: Document Number: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

MRF377

Abstract: 845 motherboard circuit 0805J resistor kyocera 845 motherboard dvbt nippon capacitors 2508051107Y0 datasheet dvbt transmitter Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF377 Rev. 1, 12/2004 RF Power Field - Effect Transistor MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

chip capacitor vishay

Abstract: Vj3640Y MRF373A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these

DVB-T Schematic

Abstract: LDMOS DVB-T transistors DVB-T acpr MRF6VP3091N mrf6v3090n
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 0, 9/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast

Contextual Info: VJ 6040 Vishay Vitramon VJ 6040 UHF Chip Antenna for Mobile Devices FEATURES • Small outline 10.5 mm x 15.5 mm x 1.2 mm • Omni-directional, linear polarization • Complies with MBRAI standard • Complete UHF band coverage (470 MHz to 860 MHz) up to 1.1 GHz

RFW8021

Abstract: heraeus Heraeus PD 860002 SA chip antenna express card DVB 86-0002
Contextual Info: RFW8021 Vishay RFWaves RFW8021 Chip Antenna for Mobile Devices FEATURES • Small outline 10.5 x 15.5 x 1.2 mm • • • • Omni directional, linear polarization Complies with MBRAI standard Complete UHF band coverage (470 MHz to 860 MHz) Requires a tuning circuit and ground plane for optimal

Contextual Info: VJ 6040 Vishay Vitramon VJ 6040 UHF Chip Antenna for Mobile Devices FEATURES • Small outline 10.5 mm x 15.5 mm x 1.2 mm • Omni-directional, linear polarization • Complies with MBRAI standard • Complete UHF band coverage (470 MHz to 860 MHz) up to 1.1 GHz