46BALL Search Results

Contextual Info: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024 I n te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 1.8V to 2.7V • Commercial (0° to 70°C) and Industrial (0° to 70°C)

AT49BV322A-70TI

Abstract: nc 555 AT49BV320A AT49BV320AT AT49BV322A AT49BV322AT
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

TIP 3771

Abstract: 3771 E1 3771 8 pin ic
Contextual Info: LOW PO W ER 3V C M O S S R A M 1 M EG 64Kx 16-BIT ADVANCE INFORMATION IDT71L016 In te g ra te d D e v iz e T e c h n o lo g y , l i e . FEATURES: • 64K x 16 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

FT18

Abstract: MT28F160C3 MICRON fBGA package code FT18P TN-28-18
Contextual Info: TN-28-18 3V ENHANCED+ BOOT BLOCK COMPATIBILITY TECHNICAL NOTE MICRON-INTEL 3V ENHANCED+ BOOT BLOCK FLASH COMPATIBILITY INTRODUCTION MANUFACTURER AND DEVICE ID CODES Micron’s 16Mb enhanced+ boot block flash device is a nonvolatile, electrically block-erasable flash , programmable, read-only memory containing 16,777,216

INTEL 28F640

Abstract: Intel 8275 Block diagram 2k36e 28F008B3 28F008S3 28F016B3 28F016S3 28F032B3 28F160B3 28F800B3
Contextual Info: E µBGA* Package Mechanical and Shipping Media Specifications August 1998 Revision 3.11 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in

IDT71T016

Abstract: SO44-2 BF461
Contextual Info: ADVANCE INFORMATION IDT71T016 LOW POWER 2V CMOS SRAM 1 MEG 64K x 16-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 Organization • Wide Operating Voltage Range: 1.8 to 2.7V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

T808A

Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

IDT71L024

Contextual Info: ADVANCE INFORMATION IDT71L024 LOW POWER 3V CMOS SRAM 1 MEG 128K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

IOea10

Abstract: IDT71T024 BF461 BF 46
Contextual Info: ADVANCE INFORMATION IDT71T024 LOW POWER 2V CMOS SRAM 1 MEG 128K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 1.8V to 2.7V • Commercial (0° to 70°C) and Industrial (0° to 70°C)

3771

Abstract: IDT71L016 SO44-2 Mark 3771 b3771
Contextual Info: ADVANCE INFORMATION IDT71L016 LOW POWER 3V CMOS SRAM 1 MEG 64K x 16-BIT Integrated Device Technology, Inc. FEATURES: • 64K x 16 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C) and Industrial (-40° to 85°C) temperature options

T 321 D

Abstract: AT49BV320 AT49BV320A AT49BV320T AT49BV321 AT49BV321T AT49BV322A AT49LV320 AT49LV320T AT49LV321
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.3V BV , 3.0V to 3.6V (LV) • Access Time – 85 ns • Sector Erase Architecture • • • • • • • • • • • – Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout

MX29GL256

Abstract: 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D
Contextual Info: Spansion NOR Flash Memory Competitive Cross Reference Guide December 2009 Parallel 1.8V Density Voltage Bus Mb (V) VIO (V) Type Bus Sector Width Type # Initial Access Burst Speed Banks Times (ns) (MHz) Packages Temp Range Recommended Pin Software Spansion OPN Compatible Compatible Notes

3523A

Abstract: AT49BV800AT SA22 00C1H AT49BV800A
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

Hardlock

Abstract: 3591B
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

bsc 60h

Abstract: SAD-050 3367A AT49BV160C AT49BV160CT
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

AT49BV32XA

Abstract: AT49BV320A AT49BV320AT AT49BV322A AT49BV322AT 2E0000
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

Contextual Info: ADVANCE‡ 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C3 Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT Top View 46-Ball FBGA • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks

ed9a

Abstract: woy transistor
Contextual Info: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024 I n te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 1.8V to 2.7V • Commercial (0° to 70°C) and Industrial (0° to 70°C)

Contextual Info: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71L024 Integrated Devise Technology, ]hc. FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

FX615

Abstract: C8000H MT28F160C34 micron flash otp
Contextual Info: ADVANCE‡ 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C34 FEATURES • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks • VCC, VCCQ and VPP voltages: 3.3V ±5% VCC 3.3V ±5% VCCQ 1.65V–3.465V and 12V VPP

AT49BV320

Abstract: AT49BV320A AT49BV320T AT49BV321 AT49BV321T AT49LV320 AT49LV320T AT49LV321 AT49LV321T
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.3V BV , 3.0V to 3.6V (LV) • Access Time – 85 ns • Sector Erase Architecture • • • • • • • • • • • – Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout

ATMEL 402

Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout