466S823BT3 Search Results

Contextual Info: Preliminary 466S823BT3_ 144pin SDRAM SODIMM 466S823BT3 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION Perform ance range The Sam sung KM M 466S823BT3 is a 8M bit x 64 Synchronous

Contextual Info: 144pin SDRAM SODIMM 466S823BT3 466S823BT3 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung 466S823BT3 is a 8M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung

KMM466S823BT3

Abstract: D057 KM48S8030BT KMM466S823BT2
Contextual Info: 466S823BT3 144pin SDRAM SODIMM Revision History R evision .2 M arch 1998 Som e P a ra m eter value s & C h racteristics of com p, level are cha ng ed as b e lo w : - Input leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1,5uA.

Contextual Info: 466S823BT3 144pin SDRAM SODIMM Revision History Revision .2 March 1998 Some Parameter values & Chracteristics of comp, level are changed as below : - Input leakage C urrents (Inputs) : ± 5uA to ± 1 uA. Input leakage C urrents (I/O) : ± 5uA to ± 1.5uA.