45W UHF Search Results

TV RADIO IC free

Abstract: bf194 BD124 BF195 BD116 BF180 BFW87 BF196 BD133 BF197
Contextual Info: 54 T ran sisto rs Continued Electronic Valves Z & I Aero Services Ltd London England 1972-73 ^JapìiX Notes T03 15W 30m c 1t +80 T03 45W 95m cl2i +60 55<2 2A 1A BD123 BD124 S/NPN S/NPN T03 MD17 45W 15W 85m c<2) 60m cm +90 +70 55<2) 60‘2’ 1A 0 .5A BD131

NTE367

Abstract: 45W UHF
Contextual Info: NTE367 Silicon NPN Transistor RF Power Amplifier PO = 45W @ 512MHz Description: The NTE367 is a silicon NPN RF power transistor in a W65 type package designed for 12.5V UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz.

shery

Contextual Info: UTV0408-45 45W Psync, 470-860MHz, 32V Broadband RF Power N Channel Enhancement-Mode Lateral MOSFET The UTV0408-45 is designed for high power UHF TV transmitter applications and is capable of producing 14dB gain and 45 watt peak sync output power over an instantaneous bandwidth

Contextual Info: ^ ELECTRONIC A mitsubishi DEVICE GROUP RF POWER MODULE M67728 430-450MHz Bandz Amateur SSB Mobile Radio DESCRIPTION OUTLINE DRAWING Dimensions in mm M67728 is a thick film RF power module specifically designed for 430-450MHz, 45W all mode amateur radio. FEATURES

Contextual Info: NPT1015 Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •       Suitable for linear and saturated applications Tunable from DC-3.5 GHz 28V Operation Industry Standard Package

D1002UK

Contextual Info: TetraFET D1002UK.02 METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 45W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS

D2022UK

Contextual Info: TetraFET D2022UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 45W – 28V – 500MHz PUSH–PULL B H C G 2 3 1 A D E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M J O K • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D2209UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 45W – 12.5V – 900MHz SINGLE ENDED C D E 2 pls 1 B 2 3 A G 5 4 H I FEATURES • SIMPLIFIED AMPLIFIER DESIGN F M J K N DT PIN 1 SOURCE (COMMON) PIN 2

Contextual Info: TetraFET D2022UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 45W – 28V – 500MHz PUSH–PULL B H C G 2 3 1 A D E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M J O K • SUITABLE FOR BROAD BAND APPLICATIONS

transistor 2N4891

Abstract: 45W UHF 2N4891 2N4947 transistor 2n4852 2SH21 Lv42 2n6120 91kohm 2N494
Contextual Info: ADDITIONAL TRANSISTORS Item Number Part Number Polarity Manufacturer Package Style Description Mati. Unijunction Transistors, Cont'd 2N1671A 2N1671B 2N1671C 2N2160 2N2213 2N2213 2N2417 2N2417A 2N2417B 2N2418 2N2418A 2N2418B 2N2419 2N2419A 2N2419B 2N2420

THU50

Abstract: 470-860mhz Power amplifier w power 470-860mhz w 45W UHF linear amplifier 470-860 470-860mhz Power amplifier
Contextual Info: THU50 50W Class A UHF Amplifier Designed for TV transposers and transmitters, this amplifier incorporates microstrip technology and discrete linear push-pull transistors whith gold metallization and diffused emitter ballast resistors to enhance ruggedness and reliability.

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

ASZ15

Abstract: AF127 AF126 AF125 AF124 ASZ18 ASZ16 AF117 ADZ12 AF116
Contextual Info: 52 T ran sistors Continued Notes Minimum value Average value Max. unilateralized power gain Max. frequency of oscillation With heat sink Max. total dissipation in free air at 25°C ambient temp. Vcbo: Max. collector-to-t»ase voltage, emitter open-circuited

TRANSISTOR S 838

Abstract: J552 MRFS47 56590653B TRANSISTOR motorola 838 56-590-65-3B j547 J428
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed for 12.5 volt UHF large-signal, common-base amplifier applica­ tions in industrial and commercial FM equipment operating in the range of 806-960 MHz. • Specified 12.5 Volt, 870 MHz Characteristics

M57722

Contextual Info: - 2 98 - i - Sä 9. * Il $11$: a = .W Vcc V • M 5 7 7 2 1M m z •x m - i & m m f < ê „ t ? 's i? X ? , n Ä a W § 3 x f - :y o ffiiâ : UHF(400~450MHz)w 1~ SW FM » « « ¡s is m o : m iiijJjo a i lJ ( # ( S 2 2 d B ) o 5 Ê fê « 16.0 « a f range(MHz)

dvb power supply circuit diagram

Abstract: dvb circuit diagram dvb datasheet dvb strong power supply circuit diagram DVB-T RS232-RS485
Contextual Info: AU05-D 3-8 Wrms DVB-T UHF Amplifier AU05-D is a full LD-MOS Broadcast Power Amplifier designed for digital signal repeaters and gap-fillers. The unit is the state of the art in terms of easy assembly, reliability and performance. The complete unit can assure the compliance to

dvb power supply circuit diagram

Abstract: RF remote control circuit diagram dvb strong power supply circuit diagram DVB-T sma connector panel RS232-RS485 uhf 3W amplifier
Contextual Info: AU05-D 3 - 8 Wrms DVB-T UHF Amplifier AU05-D is a full LD-MOS Broadcast Power Amplifier designed for digital signal repeaters and gap-fillers. The unit is the state of the art in terms of easy assembly, reliability and performance. The complete unit can assure the compliance to

500w power amplifier circuit diagram

Abstract: RF Amplifier 500w 200w computer power supply Circuit diagram 200w power amplifier circuit diagram 500w sound amplifier circuit diagram DVB-T led power supply 50w t-amplifier RS232-RS485
Contextual Info: AU21-D 10-20 Wrms UHF DVB-T Amplifier 50W p.s. UHF Analog Amplifier AU21-D is a full LD-MOS Broadcast Power Amplifier designed for digital and analog signal repeaters and gap-fillers. The unit is the state of the art in terms of easy assembly, reliability and

Contextual Info: NPT1015 Gallium Nitride 28V, 50W, DC-2.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •       Suitable for linear and saturated applications Tunable from DC-2.5 GHz 28V Operation Industry Standard Package

NTE2314

Abstract: NTE375 NPN pnp MATCHED PAIRS RF 482 NTE396 NTE397 T060 T072 T092 2-30MHZ
Contextual Info: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts Diag. No. Maximum Collector Current (Amps) Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain b v CEO BVEBo h pE Pd 't 31a •c 0.05 BV cbo

NTE375

Abstract: NTE397 NTE392 NTE393 NTE396 T0218 T072 T092
Contextual Info: N T E ELECT RONICS INC bMaiSST QGQSbOb QTM * N T E S5E D P I POUVR I iB g j g g j j : T-33-01 I Maximum Breakdown Voltage Maximum Collector Power Dissipation Watts Typical Frsq. (MHz) Case Style Diag. No. Maximum Collector Current (Amps) Collector to Base

ta8172

Abstract: t 3866 transistor equivalent transistor uhf circulator t 3866 power transistor t 3866 transistor 5257 transistor rca rf power transistor 30w 420 NPN Silicon RF Transistor Allen-Bradley 1397 Allen-Bradley resistors
Contextual Info: File No. 656. RF Power Tran sisto rs Solid State Division 4 .n a 7 fì 40971 30-W and 45-W, 12.5-V, UHF Mobile, Silicon N-P-N Overlay Transistors With Internally Mounted Input-Matching Networks Features: • Internally mounted input " T " matching networks

2sc3714

Abstract: 2SC3691 2SC3702 2SC3676 2SC3692 2SC3671 2SC3672 2SC3673 G1508 2SC3678
Contextual Info: - 168 - S Ta=25cC, *EPfäTc=25°C} a s m. % 2SC3671 2SC3672 2SC3673 2SC3675 2SC3676 2SC3678 2SC3679 2SC3680 2SC3685 2SC3686 2SC3687 2SC3688 2SC3689 2SC3691 2SC3692 2SC3693 2SC3694 2SC370Q 2SC3701 2SC3702 2SC3704 2SC3705 2SC3707 2SC3708 2SC3709 2SC3710 2SC3714

2SC2897

Abstract: 2SC2896 2SC2894 2SC2930 2SC2903 2SC2925 2SC2892 2SC2895 2sc2902 2SC2904
Contextual Info: - 138 - M £ *± m £ & u T a = 2 5 <1C , * E P [ á T c = 2 5 tC V’ CBO V’ ceo ÍC(DC) Pc Pc* (V) (V) (A) (W) (W) ICBO (// A) V CB (V) / m t o b • , hF E / (max) t e (T a = 2 5 * C ) , (V) ■ iC/ *H (A) [*EPfätypi ] (V) le 2SC2903 an BM Bn Bn