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    d2311

    Abstract: D5555
    Contextual Info: ’H Y U N D A I ” Y HY52B4 DD-I Series 1 51 ZK x B-bit CM DS SRAM PRELIM INARY DESDHIPTION The HYB2B400-I is a high-speed, low pow er and 524,288 x B-bits CMOS static RAM Fabricated using Hyundai's high perform ance twin tub CMOS process technology. This high reliability process cuuplad with innovative circuit


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    hy52b4hyb2b400-ihy52b40d-ihy62b40d-i+8tem06445dbfld42541d7b511ded2-11-mayb4hy62b400-id2311d5555 PDF