45WATTS Search Results

VTB22FWC

Abstract: VTB23FWD CA95037 VTB23FWC
Contextual Info: DC/DC SWITCHING POWER SUPPLY DC INPUT 12,24,48, 110 DUAL OUTPUT 45WATTS VTB-WCx/VTB-WD SERIES General Description Features 1. 2. 3. Dimension: 96W x 160L × 33H Variety of Models Chassis mount type Compact and High Efficiency DC INPUT: 12V Input Characteristics

VTB01C24

Abstract: VTB01C48B
Contextual Info: DC/DC SWITCHING POWER SUPPLY DC INPUT 12,24,48, 110 MULTIPLE OUTPUT 45WATTS VTB-00Cx/VTB-00D SERIES General Description Features Dimension: 96W x 160L × 33H 1. 2. 3. Variety of Models Chassis mount type Compact and High Efficiency DC INPUT: 12V Input Characteristics

luxtron 800

Abstract: fr108 FT10301N0050J FT10800N0050J02 FT10515N0050J DK004 LT11020T0050J FT103 ft10515n0050j01 resistor catalog
Contextual Info: AMERICAN TECHNICAL CERAMICS HIGH POWER RESISTIVE PRODUCTS AT C H I G H P O W E R R E S I S T I V E P R O D U C T S Table of Contents ATC: Company

Contextual Info: polyfet rf devices L88026 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

1800 ldmos

Abstract: T1L2003028-SP 28V LT 862 ADE CDM 03 T1L2003028-SP 013964 3442-16 TRANSISTOR table
Contextual Info: TriQuint It TM POWER BAND SEMICONDUCTOR T 1L2003028-S P 30 W, 28V, 500 M H z -2 G Hz, P o w e r b a n d L D M O S RF P o w e r T r a n s is t o r In tr o d u c tio n Table 1. T h e rm a l C h a ra c te ris tic s Parameter The T1L2003028-SP is a POWERBAND™ discrete

IRL19

Contextual Info: T1L2003028-SP 30 W, 28V, 500 MHz—2 GHz, PowerbandTM LDMOS RF Power Transistor Introduction The T1L2003028-SP is a POWERBANDTM discrete LDMOS, enhancement mode RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an

Contextual Info: EEMB BATTERY 45W Solar module No.ESP045 THE CUSTOM DESIGN: The left picture shows the format of this solar module. It could be changed according to the need of customer or designer. All the figures and parameters rely on the actual need of user. SPECIFICATIONS*

Contextual Info: High Power Resistive Products Resistors and Terminations: Engineering Guidelines DESIGN, MEASUREMENT AND PERFORMANCE As the wireless revolution extends component requirements upward in frequency, higher in operating power, and smaller in size, performance demands on resistive devices grow ever

LX803

Contextual Info: polyfet rf devices LX803 General Description Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER LDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 45 Watts Single Ended

fr108

Abstract: Ever Ohms chip resistor
Contextual Info: AT C H I G H P O W E R R E S I S T I V E P R O D U C T S ATC Resistors and Terminations: Engineering Guidelines Design, Measurement and Performance Structures, Implementations, and Configurations . . . . . . . . . . . . . . . . . . . . .36 Specs and Specmanship . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37

Contextual Info: TriQuint PüwERBAND SEMICONDUCTOR TM T 1L2003028-S P 30 W, 28V, 500 M H z -2 G Hz, P o w e r b a n d L D M O S RF P o w e r T r a n s is t o r Introduction T a ble 1. T h e rm a l C h a ra c te ris tic s Parameter The T1L2003028-SP is a POWERBAND™ discrete

FT10515N0050J

Abstract: luxtron 800 FA10975N01DBFBK high power dummy load 50 ohm 200w FT10870N0050J03 1945 LT CT12010T0050J CT11020T0050J RO4350 30mil FT109
Contextual Info: AMERICAN TECHNICAL CERAMICS HIGH POWER RESISTIVE PRODUCTS AT C H I G H P O W E R R E S I S T I V E P R O D U C T S Table of Contents ATC: Company