4501 IC Search Results

Contextual Info: 2 Alle Rechte vorbehalten/ 3 ill rights resernd 4 5 6 A Eingebaut in Mu 11ikontakt-ModuI 09 14 004 4501 mounted in mu 11icontact-modul 09 14 004 4501 50 Cl Leitungen / 50Cl wires RG 174/U, RG 188 A/U, RG 316/U fiir geraden Lei teranschlu3 zum Loten und/oder Crimpen

v 4520

Abstract: CRO4500A
Contextual Info: CRO4500A 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev A1 PHASE NOISE (1 Hz BW, typical) -60 £(f) (dBc/Hz) -70 FEATURES • Frequency Range: 4499 - 4501 MHz • Tuning Voltage: 0.5-4.5 Vdc • MINI-16 - Style Package

2SK18

Abstract: 2SK1849 EN4501
Contextual Info: Ordering num ber:EN45 01 2SK1849 N o.4501 N -C hannel MOS Silicon FET SAiYO i Very High-Speed Switching Applications F e a tu r e s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M axim um R a tin g s at Ta = 25°C

Contextual Info: Deep First-In First-Out FIFO 5 1 2 x 9 CMOS Memory 67C 4501 - 2 5 / 3 5 / 5 0 / 6 5 / 8 0 î l Ordering Information Features • Ram-based FIFO PART N U M B ER D E SC R IP T IO N • Cycle times of 35/45/65/80/100 nanoseconds 67C4501-25 • Asynchronous and simultaneous writes and reads

4501 ic

Abstract: rds 4501 4501 d 4501 ac
Contextual Info: S T S 4501 S amHop Microelectronics C orp. Oc t. 12,2007 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S ID F E AT UR E S S uper high dense cell design for low R DS ON . R DS (ON) ( m Ω ) Max R ugged and reliable. 65 @ V G S = -10V

Contextual Info: Alle Rechte vorbehalten/ Ml tights reset red 2 A 3 I 6 5 4 3L 29.35 Harf Multi module 0 9 14 0 1 2 4501 O xl HARTING xxxxxxxxx n \ y A il D lie n slo n s In •■ Techn. C haracter. N icht t n le r ie r te HaPe/fr e e s iz e t o le r m e s O rig in a l Size D ll A 4

4501 ic

Abstract: 4501 ac
Contextual Info: S T S 4501 S amHop Microelectronics C orp. Oc t. 12,2007 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S ID F E AT UR E S S uper high dense cell design for low R DS ON . R DS (ON) ( m Ω ) Max R ugged and reliable. 65 @ V G S = -10V

RO SOT23-5

Abstract: AX450 max4502C
Contextual Info: 19-1062; Rev 0; 6/96 A I^ X IA I Low -Voltage, SPST, CMOS A nalog S w itches _ Features The M A X 4501/M A X 4502 are s in g le -p o le /sin g le -th ro w S P S T , to w -v o lta g e , s in g le -s u p p ly , C M O S a n a lo g sw itch e s. The M AX4501 is no rm a lly o p e n (N O ). The

555 astable

Abstract: 4501d
Contextual Info: I T N I A 1 ^ W Advanced I ALD4501 L in e a r D e v ic e s QUAD HIGH SPEED MICROPOWER TIMER G E N E R A L D E S C R IP TIO N PIN C O N F IG U R A T IO N The ALD4501 tim e r is a high pe rform ance Q U A D m onolithic tim ing circuit built w ith advanced s ilicon g a te C M O S technology. It offers the benefits

pn junction DIODE 1N4001

Abstract: 176j IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840 VNP002A
Contextual Info: Ü Ü A C D ^ U / C D M i v i a Dr/\Wi iv iv ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BV qss Volts 4 5 0 -5 0 0 TO-3 TO-220

Contextual Info: UNITED MICROELECTRONICS ^2 DE| T32Sfll5 OODQSSS 3 1~_ 9 3 2 5 8 1 2 UNITED MICROELECTRONICS UM4501 T -4 6 -2 3 -0 8 w Cl 28 H v c c D8 C 27 □ 3 26 □ D5 D2 C 4 ' 25 □ D6 D lC 5 - DO C 6 x iC 7 FF C 8 QO C 9 20 □ xo Q1 C 10 •19 □ Q7 Q2 n 11 18 □

Contextual Info: REVISIONS REV. DESCRIPTION DATE A INITIAL RELEASE 0 1 /2 0 /1 0 1APPROVED f D.N. 0 .1 4 6 .344 HEX .528 ACROSS FLATS 5 /8- 2 4 0.812 UNEF-2A .750 HEX NOTES: MATERIALS: 1. 2. 3. 4. 5. 6. BODY = STAINLESS STEEL PER ASTM A582, ALLOY 303, CONDITION "A”. INSULATORS - VIRGIN WHITE TEFLON PER ASTM D1710, GRADE 1, TYPE I, CLASS " B ”.

Contextual Info: REVISIONS REV DESCRIPTION A INITIAL RELEASE DATE APPROVED 1 0 /1 9 /1 0 A.D.M. MATERIALS: 1. 2. 3. 4. 5. INSULATORS = VIRGIN WHITE TEFLON PER ASTM D 1 7 1 0 , GRADE 1, TYPE I, CLASS ” B” . CONTACT = BERYLLIUM COPPER PER ASTM B 1 9 6 , ALLOY 0 1 7 3 0 0 , TEMPER TD04.

Contextual Info: D A T « C O N T A I N E D IN T H I S DO CU MENT IS P RO PRIETA RY TO TROMPETER EL EC T R O N IC S INC. AND S H A L L NOT B E D I S C L O S E D . C O P I E D OR U S ED F O B P f l O C U M N T OB M A N U F A C T U R E W IT H O U T EXPRESS W RITTEN PERM ISS ION .

all ic data

Abstract: diode IN 5402 AD808
Contextual Info: AD808 622 Mbps Limiting Amplifier and Clock and Data Recovery IC HIGH LEVEL OF PERFORMANCE AND FUNCTIONAL INTEGRATION FACILITATES DESIGN WHILE MINIMIZING MANUFACTURING COSTS The AD808 leverages Analog’s design expertise for 622 Mbps fiber optic receiver applications.

Contextual Info: R E V IS IO N S REV. A | DESCRIPTION DATE APPROVED INITIAL RELEASE 0 7 /0 9 /1 0 D.N. .34 4 ACROSS 5 /8 -2 4 .52 8 FLATS HEX I— 0 . 8 1 2 U N E F-2A - .7 5 0 HEX NOTES: MATERIALS: 1. 2. 3. 4. 5. 6. BODY - STAINLESS STEEL PER ASTM A 5 8 2 , ALLOY 3 0 3 , CONDITION "A ” .

2750k

Abstract: Sensor NTC 10K / 3435 ntc 100K 4085 thermistor 10k 25 3470 thermistor 10k 25 3435 3eh22 ic CD 4047 IC 4047 sensor 3414 cd 4061
Contextual Info: B221_NTCCM 1/9 Sensors NTCCM Series NTCCM1005, 1608, 2012 Types Temperature Sensors NTC Thermistors PHYSICAL PROPERTIES OF NTC THERMISTORS INITIAL RESISTANCE Thermistor resistance is a function of absolute temperature as indicated by the following relationship:

Contextual Info: • 7 f l 2 ñ cm •fe 00GÛ274 4ñT « R H II /S ensors RPI-512 RPI-512 h IC * Photo IC Type Interrupter with Connector 1^ t-J B ^ ü H / D im e n s io n s Unit : mm RPI-512 là, $1 * - K, GaAs S Æ S T - I C * h IC fc fê fflü RPI-512 is photointerrupter which uses

A1534A

Abstract: 1534a 2SC3940 A1534
Contextual Info: Panasonic Transistor 2SC3940, 2SC3940A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification U nit: mm C om ple m e ntary to 2 S A 1 534 and 2S A 1534A • Features • Low collector to emitter saturation voltage VCE -sat .

Contextual Info: ASP-67809-XX NOTE: 1 2. U SE TMMH BO D IES A N D AD D END SH RO UD S. FILL P O S T TO A .1 4 0 WITH A S P - 7 1 3 3 9 - 0 1 - H 3. PARTS 4. END SH RO UD N O T SHOWN VIEW FOR C LAR IT Y. 5. C 6. .0 2 0 TO BE B U LK IN R IGHT SIDE R E P R E S E N TS A C R IT IC A L DIM EN SIO N .

"Intelligent Power Devices"

Abstract: Intelligent Power Devices MIP501 MIP502
Contextual Info: Panasonic Intelligent Power Devices IPDs M IP 5 0 1 , M IP502 Silicon M OS IC Unit : mm • Features • High breakdown voltage, N-Ch MOS FET output (V dss > 40V Ron < 0.5 il) • Over-current-protection function built-in • Reset function built-in • Direct drive possible by the logic circuit

diode IN 5402

Abstract: TSSOP-16 ADN2850 LFCSP-16
Contextual Info: ADN2850 Dual 10-Bit Programmable Resistor REPLACES DISCRETE RESISTORS FOR IMPROVED PERFORMANCE AND REDUCED MANUFACTURING COSTS In order to address ever-increasing infrastructure requirements of fiber optic communications, Analog Devices has focused on providing high-performance yet costeffective interface IC solutions for optical

AD8015 Circuits

Abstract: ad8015 all ic data AD807 AD8015 current in line amplifier fiber optic
Contextual Info: AD8015 / AD807 155 Mbps Fiber Optic Receiver ICs HIGH-PERFORMANCE, LOW POWER SOLUTION FOR FIBER OPTIC RECEIVERS As the demand for bandwidth continues to grow, power and board space constraints placed on the developers of electro-optical interfaces intensify as well. Analog Devices

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED BY TY C O C O P Y R IG H T E L E C T R O N IC S FO R ALL C O R P O R A T IO N . 2 P U B L IC A T IO N IN TE R N A TIO N A L LOC RIGHTS D IS T R E S E R VE D . R E V IS IO N S .0 D E S C R IP T IO N