4500V 1800A Search Results

Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM900DB-90S ● IF . 900A ● VRRM . 4500V

Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM900DB-90S ● IF . 900A ● VRRM . 4500V

CM900HB-90H

Contextual Info: MITSUBISHI HVIGBT MODULES CM900HB-90H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM900HB-90H ● IC . 900A ● VCES . 4500V

DSF20545SF

Abstract: DSF20545SF40 DSF20545SF41 DSF20545SF42 DSF20545SF43 DSF20545SF44 DSF20545SF45
Contextual Info: DSF20545SF DSF20545SF Fast Recovery Diode Advance Information Replaces March 1998 version, DS4152-3.1 DS4152-4.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 1256A IFSM 16000A Qr 1250µC trr 7.0µs • Induction Heating ■ A.C. Motor Drives

DSF20545SF45

Abstract: DSF20545SF40 DSF20545SF DSF20545SF41 DSF20545SF42 DSF20545SF43 DSF20545SF44 sine wave ups designing DS4152-4
Contextual Info: DSF20545SF DSF20545SF Fast Recovery Diode Advance Information Replaces March 1998 version, DS4152-3.1 DS4152-4.0 January 2000 KEY PARAMETERS VRRM 4500V IF AV 1256A IFSM 16000A Qr 1250µC trr 7.0µs APPLICATIONS • Induction Heating ■ A.C. Motor Drives

DSF20545SF41

Abstract: DSF20545SF45 DSF20545SF40
Contextual Info: DSF20545SF M ITEL Fast Recovery Diode SEMICONDUCTOR DS4152 - 3.1 March 1998 Supersedes January 1996 version, DS4152 - 3.0 KEY PARAMETERS V RRM 4500V 1256A Jf AV 16000A FSM 1250|lC Qr APPLICATIONS • Induction Heating. ■ A.C. M otor Drives. ■ Inverters And C hoppers.

Contextual Info: JANUARY 1996 DSF20545SF DS4152-3.0 DSF20545SF FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 1256A IFSM 16000A Qr 1250µC trr 7.0µs • Induction Heating. ■ A.C. Motor Drives. ■ Inverters And Choppers. ■ Welding. ■ High Frequency Rectification.

LIC AGENTS DATA

Contextual Info: DSF20545SF M ITEL Fast Recovery Diode SEMICONDUCTOR DS4152 - 3.1 March 1998 Supersedes January 1996 version, DS4152 - 3.0 KEY PARAMETERS V RRM 4500V IF AV 1256A 16000A ^FSM 1250(lC Q 7.0|is t. APPLICATIONS • Induction Heating. ■ A.C. Motor Drives.

160nF

Abstract: 4500a u4200 DIM900ESM45-F000
Contextual Info: DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.3 December 2007 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE sat * (typ) IC (max) I C(PK) (max) (LN25831) 4500V 2.9 V 900A 1800A *(measured at the power busbars and not the auxiliary terminals)

DSF20545SF

Abstract: DSF20545SF40 DSF20545SF41 DSF20545SF42 DSF20545SF43 DSF20545SF44 DSF20545SF45
Contextual Info: DSF20545SF DSF20545SF Fast Recovery Diode Advance Information Replaces January 2000 version, DS4152-4.0 DS4152-5.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 1256A IFSM 16000A Qr 1250µC trr 7.0µs • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers

Contextual Info: DSF20545SF DSF20545SF Fast Recovery Diode Advance Information Replaces January 2000 version, DS4152-4.0 DS4152-5.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 1256A IFSM 16000A Qr 1250µC trr 7.0µs • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers

Contextual Info: DSF20545SF DSF20545SF Fast Recovery Diode Advance Information Replaces January 2000 version, DS4152-4.0 DS4152-5.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 1256A IFSM 16000A Qr 1250µC trr 7.0µs • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers

Contextual Info: Si GEC PLESSEY S E M I C O N D U C T O R S DS4152-3.0 DSF20545SF FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS V RR„ 4500V 1256A F AV 16000A FSM 1250^C • Induction Heating. ■ A.C. Motor Drives. ■ Inverters And Choppers. ■ Welding. ■ High Frequency Rectification.

RM900DB-90S

Abstract: CC-124 4500V 1800A
Contextual Info: 三菱半導体〈HIGH VOLTAGE DIODE モジュール〉 RM900DB-90S 大電力スイッチング用 絶縁形 High Voltage Diode モジュール RM900DB-90S ¡IF ……………………………………………… 900A ¡VRRM ……………………………………… 4500V

Contextual Info: GMKPg 3000-9uF Vishay ESTA MKP-High-Current Capacitors, Dry, Selfhealing, Segmented PART NO. ART. NO. GMKPg 3000-9uF 44701 NOMINAL RATINGS Capacitance/Tolerance Rated voltage Cn Un 9uF ± 5% 3000VDC 1500Vrms OVERVOLTAGES ACCORDING IEC 61071-1 1.1 x Un U1 3300V 30% of the

4500v

Abstract: diode 10000v UL-94-V0 US40-A 4500V 40A 3.3K M6
Contextual Info: GMKPg 3000-9uF Vishay ESTA MKP-High-Current Capacitors, Dry, Selfhealing, Segmented PART NO. ART. NO. GMKPg 3000-9uF 44701 NOMINAL RATINGS Capacitance/Tolerance Rated voltage Cn Un 9uF ± 5% 3000VDC 1500Vrms OVERVOLTAGES ACCORDING IEC 61071-1 1.1 x Un U1 3300V 30% of the

DFM900NXM45-F000

Contextual Info: DFM900NXM45-F000 Fast Recovery Diode Module Replaces DS5887-1.0 DS5887-2 April 2011 LN28310 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

4500v

Abstract: UL-94-V0 10000VAC mkph
Contextual Info: GMKPg 3000-9uF Vishay ESTA MKP-High-Current Capacitors, Dry, Selfhealing, Segmented PART NO. ART. NO. GMKPg 3000-9uF 44701 NOMINAL RATINGS Capacitance/Tolerance Rated voltage Cn Un 9uF ± 5% 3000VDC 1500Vrms OVERVOLTAGES ACCORDING IEC 61071-1 1.1 x Un U1 3300V 30% of the

Contextual Info: DFM900NXM45-F000 Fast Recovery Diode Module Replaces DS5887-1.0 DS5887-2 April 2011 LN28310 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

GTO thyristor 1200V 50A

Abstract: scr driving circuit for dc motor MOSFET circuit welding INVERTER SCR Gate Drive 200v dc motor MOSFET welding INVERTER MOSFET welding INVERTER 200A igbt for HIGH POWER induction heating 600V igbt dc to dc buck converter SWITCHING WELDING BY MOSFET igbt circuit for induction melting
Contextual Info: POWEREX 2009:Layout 1 12/31/08 9:18 AM Page 2 Power Semiconductor Solutions 2009 Quick Reference Guide ● IGBTs ● MOSFET MODULES ● IPMs ● ● DIPIPM ● ● ● ACCESSORIES ● DISCRETE THYRISTORS ● DISCRETE RECTIFIERS ● THYRISTOR AND DIODE MODULES

160nF

Abstract: DIM900ESM45-F000
Contextual Info: Preliminary Data DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.0 October 2005 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability

SGCT

Abstract: mitsubishi SGCT scr gate driver ic 600 A igbt types 6000v MITSUBISHI GATE TURN-OFF THYRISTOR scr GTO thyristor driver m57962l GTO thyristor 1200V 50A SGCT 400A NATIONAL IGBT
Contextual Info: News of Importance to Power Semiconductor Users www.pwrx.com SPRING 2002 Powerex Expands HVIGBT Line U P C O M I N G TRADE SHOWS A N D CONFERENCES HVIGBT LINE-UP Ic: A Vce(V) 50 75 100 150 200 300 400 600 800 900 1200 1600 1800 CM800HA34H CM1200HA- CM1600HC- CM1800HC34H

switch transistor

Contextual Info: DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.1 August 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS

Contextual Info: DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.2 November 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability KEY PARAMETERS