4500 IGBT Search Results

snubber FOR 3PHASE BRIDGE RECTIFIER

Abstract: EUPEC Thyristor gct thyristor 74x26mm eupec igbt BSM 100 gb FAST HIGH VOLTAGE DIODE 4000 V EUPEC D1201 D1201 D170S eupec phase control thyristor
Contextual Info: . power the Home Products F-Diode News Contact Editorials GTO Diodes . V RRM = 2500 V 2500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 6000 V 6000 V Company Search Site Content Fast Rectifier Diodes Freewh. Diodes for GCT & IGBT GTO Snubberdiodes part-no.

DISC THYRISTOR

Abstract: D170U D1201 D170S single phase bridge rectifier pin configuration "921" Thyristor diode gto EUPEC Thyristor V4500 4500 igbt
Contextual Info: . power the Home Products F-Diode News Contact Editorials GTO Diodes . V RRM = 2500 V 2500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 6000 V 6000 V Company Search Site Content Fast Rectifier Diodes Freewh. Diodes for GCT & IGBT GTO Snubberdiodes part-no.

GT 1081

Abstract: MAS 10 RCD IGBT GT 1081 igbt 3 KA transistor GT 1081 T1791 rcd 103 35d56 DS30 GS11
Contextual Info: Click on outline no. IGBT and GCT - Freewheeling Diodes Type V DRM V D 1031 SH D 1331 SH D 1641 SX D 1181 SX D 1441 SX D 931 SH D 1131 SH *) 4500 4500 4500 6000 6000 6500 6500 estimate failure rate λ ~ 100 fit V(D)D *) I(FSM) ∫i2dt V(F)/I(FM) kV kA A²s

Contextual Info: Advance Technical Information High Voltage XPTTM IGBT IXYX40N450HV VCES = 4500V IC110 = 40A VCE sat  3.9V TO-247PLUS-HV Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 4500 V VCGR TJ = 25°C to 150°C, RGE = 1M 4500 V VGES Continuous

Contextual Info: IXTT1N450HV High Voltage Power MOSFET VDSS ID25 RDS on = 4500V = 1A   85 N-Channel Enhancement Mode TO-268HV G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 4500 V VDGR TJ = 25C to 150C, RGS = 1M 4500 V VGSS Continuous

Contextual Info: IXTT1N450HV High Voltage Power MOSFET VDSS ID25 RDS on = 4500V = 1A   80 N-Channel Enhancement Mode TO-268HV G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 4500 V VDGR TJ = 25C to 150C, RGS = 1M 4500 V VGSS Continuous

Contextual Info: QIS4506001 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Single Discrete IGBT 60 Amperes /4500 Volts Description: Powerex Single Non-Isolated Discrete is designed specially for customer high voltage applications Outline Drawing Schematic Features:

QIS4506001

Contextual Info: QIS4506001 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com Single Discrete IGBT 60 Amperes /4500 Volts Description: Powerex Single Non-Isolated Discrete is designed specially for customer high voltage applications Outline Drawing

QIS4506002

Abstract: igbt 60 Discrete IGBT ic 67a
Contextual Info: QIS4506002 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com HV Single Discrete IGBT 60 Amperes / 4500 Volts Description: Powerex Single Non-Isolated Discrete IGBT designed specially for customer high voltage applications. Outline

4500 igbt

Abstract: QIS4506001 ic 67a Discrete IGBT
Contextual Info: QIS4506001 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com Single Discrete IGBT 60 Amperes /4500 Volts Description: Powerex Single Non-Isolated Discrete is designed specially for customer high voltage switching and pulse power applications.

QIS4506002

Abstract: Discrete IGBT 4500 igbt
Contextual Info: QIS4506002 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com HV Single Discrete IGBT 60 Amperes / 4500 Volts Description: Powerex Single Non-Isolated Discrete IGBT designed specially for customer high voltage switching and pulse

Contextual Info: MITSUBISHI HVIGBT MODULES CM600HG-90H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM600HG-90H ● IC . 600 A ● VCES . 4500 V

Contextual Info: MITSUBISHI HVIGBT MODULES CM900HG-90H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM900HG-90H ● IC . 900 A ● VCES . 4500 V

Contextual Info: MITSUBISHI HVIGBT MODULES CM900HC-90H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM900HC-90H ● IC . 900 A ● VCES . 4500 V

Contextual Info: QIS4506002 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 HV Single Discrete IGBT 60 Amperes / 4500 Volts Description: Powerex Single Non-Isolated Discrete IGBT designed specially for customer high voltage applications. Features: „ „ „ „

cm900hc-90h

Contextual Info: MITSUBISHI HVIGBT MODULES CM900HC-90H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM900HC-90H ● IC . 900 A ● VCES . 4500 V

CM900HG-90H

Abstract: cm900hg hvigbt diode HVIGBT from Mitsubishi electric
Contextual Info: MITSUBISHI HVIGBT MODULES CM900HG-90H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM900HG-90H ● IC . 900 A ● VCES . 4500 V

CM600HG

Abstract: CM600HG-90H BIPOLAR TRANSISTOR HVIGBT from Mitsubishi electric CM600HG-90
Contextual Info: MITSUBISHI HVIGBT MODULES CM600HG-90H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM600HG-90H ● IC . 600 A ● VCES . 4500 V

Contextual Info: Advance Technical Information High Voltage XPTTM IGBT IXYF40N450 VCES = 4500V IC110 = 32A VCE sat  3.9V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 4500 V VCGR TJ = 25°C to 150°C, RGE = 1M

Contextual Info: Advance Technical Information High Voltage XPTTM IGBT IXYF30N450 VCES = 4500V IC110 = 17A VCE sat  3.9V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 4500 V VCGR TJ = 25°C to 150°C, RGE = 1M

Contextual Info: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4506 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1624-02 Aug 04 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide

1200G450350

Abstract: 5SNA1200G450350
Contextual Info: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450350 Doc. No. 5SYA 1415-02 04-2012 Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability

Contextual Info: Advance Technical Information High Voltage XPTTM IGBT IXYT30N450HV IXYH30N450HV VCES = 4500V IC110 = 30A VCE sat  3.9V TO-268HV (IXYT) G E Symbol Test Conditions C (Tab) Maximum Ratings VCES TC = 25°C to 150°C 4500 V VCGR TJ = 25°C to 150°C, RGE = 1M

Contextual Info: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4506 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1624-03 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide