45 S 28 Search Results

TVR2D

Abstract: SR400FV-70 SR400FV-80 SRH25C SWH-10 SWH2-16 SWH2-25ED SWHD2-16 SWHD2-20
Contextual Info: - * M m s tt € Vr s m Vr r m Vr V (V) (V) 3300 If m (A) (°C> (A) ÍFSM rm * Vpmax (°C) (A) (°C) (V) 95c 91c 91c fcb# 50a 8000 8000 30 45 50 j 45 45 45 45 45 50 j 50 j 50 j 50 j 50 j 45 45 45 45 100 503 50 j 50 j 50 j SR400FH-60 SR400FV-70 SR400FV— 80

oscillator tunnel diode

Abstract: tunnel diode "tunnel diode" oscillator GaAs tunnel diode Gallium Arsenide tunnel diode back Tunnel diode "tunnel diode" tunnel diode oscillator tunnel diode GaAs "back diode"
Contextual Info: CUSTOM COMPONENTS INC IflE D • 2570252 □□□□□ED 1 ■ x~e>*}~ II OSCILLATOR DIODES GALLIUM ARSENIDE rm RS GHz ohm s ohm s Min. (Typ.) (Typ.) fro Part Number ci Æ » 4515A 15 45 4 .76 4520A 20 45 5 .50 4525A 25 45 6 .36 4530A 30 45 7 .28 2515A

Contextual Info: Series Index Bestellnummern Part Numbers Page/Seite M ini-SM P Mini-SMP 02K118-K00 . .45 02 K 118-500 . .45 02 S 118-K00. .45

Contextual Info: □IXYS Power Schottky Rectifier DSS 16 W = 16 A V RRM = 35 - 45 V TO-220 AC Preliminary data TO-263 S-Type Type RRM V 35 45 35 45 DSS 16-0035A(S) DSS 16-0045A(S) Symbol Test Conditions ^FRMS "^VJ ^FAV Tc = 152°C; rectangular, d = 0.5 ^FSM tp = 10m s Maximum Ratings (per diode)

ZD 103 ma

Abstract: LT/SG3527A op292g AD8436
Contextual Info: 3 75 90 98 190 0.1 0.001 10 5 H 3 5 67 85 98 190 0.1 0.001 10 5 H • • 1 0.095 0.013 2.5 2 90 100 105 45 0.015 0.020 10 45 H • • 1 5 2.7 6 4 60 65 113 22 0.05 0.550 30 20 H S S • • 1 3 5 25 20 38 45 83 45 0.05 0.700 50 2501 I S S PDIP5 <6 1 0.004

IXTH24N45

Contextual Info: I X Y S IDE CORP 0D003S5 » I □ IX Y S IXTH24N50, 45 IXTM24N50, 45 Sym. IXTH24N45 IXTM24N45 IXTH24N50 IXTM24N50 Unit Drain-Source Voltage 1 Vd s s 450 500 Vdc Drain-Gate Voltage (Rq s = 1.0MÎÎ) (1) Vdg r 450 500 Vdc Gate-Source Voltage Continuous Gate-Source Voltage Transient

Nec K 872

Abstract: nec k 813 NES2427P-45
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES2427P-45 45 W S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES2427P-45 is a 45 W push-pull type GaAs MES FET designed for high power transmitter applications for WLL repeater and base station systems. It is capable of delivering 45 W of output power CW with high linear gain,

D291S45T

Abstract: Gleichrichter D921
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 921 S 45 T 62,8 Anode A K Kathode 3,5± VWK January Schnelle Gleichrichterdiode Fast Diode D 921 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values

D291S45T

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 921 S 45 T 62,8 Anode A K Kathode 3,5± VWK January Schnelle Gleichrichterdiode Fast Diode D 921 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values

D291S45T

Abstract: t04 68 diode DIN 921 T-30007
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 921 S 45 T 62,8 Anode A K Kathode 3,5± VWK January Schnelle Gleichrichterdiode Fast Diode D 921 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values

19n50

Abstract: megamos 48 a 1712 mosfet lhi 778 megamos N-channel MOSFET 800v to-247 IXTM19N50 LHi 978 megamos 13 H100
Contextual Info: I X Y S CORP 10E ° 4Liflt.2ab 000035b M 1 I - 3 7 '/ S MegaMOS FETs D IX Y S IXTH19N50, 45 IXTM19N50, 45 M AXIM UM RATINGS Parameter Sym. IXTH19N45 IXTM19N45 IXTH19N50 IXTM19N50 Unit Drain-Source Voltage 1 Vd s s 450 500 Vdc Vdgr 450 500 Vdc Drain-Gate Voltage (Rq s - 1-OMft) (1)

55-M12-A

Abstract: 7472
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 56 S 40.45 D 56 U 40.45 15 5,5 SW27 M12 Type Circuit symbol Cathode Anode S Connection pin Case U Case Connection pin Ma 1-BE / 23 Jun 1993 Schnelle Gleichrichterdiode Fast Diode

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 56 S 40.45 D 56 U 40.45 15 5,5 SW27 M12 Type Circuit symbol Cathode Anode S Connection pin Case U Case Connection pin Ma 1-BE / 23 Jun 1993 Schnelle Gleichrichterdiode Fast Diode

MIL-S-3786/13

Contextual Info: MicroMiniature Series Indexing 45°, 1 Pole/Deck R o ta ry Seector 13M 1JIVI 8 Positions 45° 45°, 2 Poles/Deck 4 Positions Military Qualified to MIL-S-3786/13 and listed on QPL Switch Switches feature totally enclosed, explosion-proof, unitized construction.

359RGA

Abstract: SM6J45 SM6D45 SM6D45A SM6G45 SM6G45A SM6J45A 4a2d
Contextual Info: - SM6 D, G, Jj45 TT-6 • 139 - * 2 I 3 - I OG I A c fo r n a i 6 A, 200 Y 600 V ( L , = 25 °C ) n S lt t f t t t O T O - 220 A B / ' y * r — :J le I drm Vt m S M 6 D 45 S M 6 G 45 S M 6 J 45 200 400 600 V d sm m T j — 125 ”C , 60 ( 50 H z, I 2 ■t

1AM5

Contextual Info: 32Kx8 SRAM molaic MSM832-35/45/55/70 Issue 2.0 : December 1992 PRELIMINARY S e m ic o n d u c to r r Pin Definition 32,768 x 8 CM O S High Speed Static RAM Features Access Times of 35/45/55/70 ns Standard 28 pin OIL footprint. Available in 28 pin VIL and FlatPack packages.

Semikron SKKQ 45 12

Contextual Info: s e M IKRO n V rsm V V rrm V drm V 700 600 500 900 800 500 1300 1200 1500 1400 1700 1600 d v /d t c r Irms (maximum values or continuous operation) (T e a s e = V/jis 24 A 1); 30 A2' SKKQ 45/06 SKKQ 31/08 SKKQ 45/08 500 SKKQ 31/12 SKKQ 45/12 500 SKKQ 31/14

Contextual Info: Schottky Rectifier Diodes Type V rrm V Ifavm •f s m vF R thJC A A V °C/W tA = 25°C 10 ms ¡F = IfAVM tvj = 25°C RthJA tvj max outline °c/w °c BYS 21-45 45 1,0 50 0,55 - 20 125 134 BYS 21-90 90 1,0 30 0,90 - 30 125 134 BYS 22-45 45 1,7 100 0,55 - 8 125

Contextual Info: Extract from the online catalog UM 45-D25SUB/S/ZFKDS Order No.: 2293637 The illustration shows version UM 45-D 37SUB/S/ZFKDS VARIOFACE module, with spring-cage connection and DSubminiature pin strip, for mounting on NS 35/7.5, 25-pos.

Contextual Info: INTEGRATED DEVICE M 7E D E3 MÖ55771 CMOS DUAL-PORT RAM 32K 4K x 8-BIT WITH SEMAPHORE QOGTfilfl 3 PRELIMINARY IDT71342SA IDT71342LA “T -H fr S S -lfc . FEATURES: DESCRIPTION: • High-speed access — Military: 35/45/55/70ns (max.) — Commercial: 25/35/45/55/70ns (max.)

Pioneer PA 0016

Abstract: PA 0016 PIONEER 80241 tfk U 209 B 55 A 436 TFK U 3212 M STR W 6262 TFK 626 E 1024 AEG TFK TELEFUNKEN stel 320 SIE20
Contextual Info: Tem ic Sales Offices Semiconductors Addresses Europe Denmark Italy Sweden TEMIC Dansk c/o AEG Industri A/S Roskildevej 8 -1 0 2620 Albenslund Tel: 45 42 6485 22 Fax: 45 43 6262 28 TEMIC TELEFUNKEN micro­ electronic GmbH Kruppstrasse 6 45128 Essen Tel: 49 201 24730 0

Contextual Info: M ttU S S IIWill September 1989 HM 65790 DATA SHEET 16 K X 4 HIGH SPEED CMOS SRAM SEPARATE I/O FEATURES FAST ACCESS TIME MILITARY : 35/45 ns max COMMERCIAL : 25/35/45 ns (max) LOW POWER CONSUMPTION ACTIVE : 267 mW (typ) STANDBY : 75 mW (typ) WIDE TEMPERATURE RANGE :

TFK 526

Abstract: TFK 626 E 1024 Pioneer pa 4010 sie200 Pioneer PA 0016 TFK 839 AEG TFK TELEFUNKEN Tfk 880 745 TFK U 3212 M tfk U 209 B 55 A 436
Contextual Info: Tem ic Sales Offices Semiconductors Addresses Europe Denmark Italy Sweden TEMIC Dansk c/o AEG Industri A/S Roskildevej 8 -10 2620 Albertsiund Tel: 45 42 6485 22 Fax: 45 43 6262 28 TEMIC TELEFUNKEN micro­ electronic GmbH Kruppstrasse 6 45128 Essen Tel: 49 201 24730 0

Contextual Info: Extract from the online catalog UM 45-D 9SUB/S/ZFKDS Order No.: 2293611 The illustration shows version UM 45-D 37SUB/S/ZFKDS VARIOFACE module, with spring-cage connection and DSubminiature pin strip, for mounting on NS 35/7.5, 9-pos.