45 S 28 Search Results

45 M 7.5 B

Abstract: UM-13 UM1-3
Contextual Info: Filters Monolithic crystal filters Type 45 M 7.5 A 45 M 7.5 B 45 M 20 A 45 M 20 B 45 U 20 B 45 M 32 A 45 M 32 B 70 M 15 A 70 M 15 B 70 M 20 A 70 M 20 B 70 U 20 A 90 M 20 A 90 M 20 B 45 R 15 C 45 M 15 A 45 M 15 A9 45 R 15 A 45 S 15 A 45 M 15 B 45 R 15 B 45 S 15 B

TVR2D

Abstract: SR400FV-70 SR400FV-80 SRH25C SWH-10 SWH2-16 SWH2-25ED SWHD2-16 SWHD2-20
Contextual Info: - * M m s tt € Vr s m Vr r m Vr V (V) (V) 3300 If m (A) (°C> (A) ÍFSM rm * Vpmax (°C) (A) (°C) (V) 95c 91c 91c fcb# 50a 8000 8000 30 45 50 j 45 45 45 45 45 50 j 50 j 50 j 50 j 50 j 45 45 45 45 100 503 50 j 50 j 50 j SR400FH-60 SR400FV-70 SR400FV— 80

diode 400V 4A

Abstract: isolators 415v star delta plc relay 5a 250v ac 30v dc plc scada and hmi DC MOTOR 12-24v delta hmi 2.2KW motor Auxillary transformer MC40-S-00
Contextual Info: 3-pole contactors dimensions mm and weights (kg) Accessories 45 45 45 60 35 35 35 50 MRO7MBO9 MBI2 Depth: 49 Weight: 0.15 MC10-S MC14-S MC18-S MC22-S Depth: 65 Weight: 0.22 MC24-S MC32-S MC40-S Depth: 87 Weight: 0.4 MC50-S MC62-S MC74-S Depth: 96 Weight: 0.85

oscillator tunnel diode

Abstract: tunnel diode "tunnel diode" oscillator GaAs tunnel diode Gallium Arsenide tunnel diode back Tunnel diode "tunnel diode" tunnel diode oscillator tunnel diode GaAs "back diode"
Contextual Info: CUSTOM COMPONENTS INC IflE D • 2570252 □□□□□ED 1 ■ x~e>*}~ II OSCILLATOR DIODES GALLIUM ARSENIDE rm RS GHz ohm s ohm s Min. (Typ.) (Typ.) fro Part Number ci Æ » 4515A 15 45 4 .76 4520A 20 45 5 .50 4525A 25 45 6 .36 4530A 30 45 7 .28 2515A

Contextual Info: Series Index Bestellnummern Part Numbers Page/Seite M ini-SM P Mini-SMP 02K118-K00 . .45 02 K 118-500 . .45 02 S 118-K00. .45

Contextual Info: □IXYS Power Schottky Rectifier DSS 16 W = 16 A V RRM = 35 - 45 V TO-220 AC Preliminary data TO-263 S-Type Type RRM V 35 45 35 45 DSS 16-0035A(S) DSS 16-0045A(S) Symbol Test Conditions ^FRMS "^VJ ^FAV Tc = 152°C; rectangular, d = 0.5 ^FSM tp = 10m s Maximum Ratings (per diode)

ZD 103 ma

Abstract: LT/SG3527A op292g AD8436
Contextual Info: 3 75 90 98 190 0.1 0.001 10 5 H 3 5 67 85 98 190 0.1 0.001 10 5 H • • 1 0.095 0.013 2.5 2 90 100 105 45 0.015 0.020 10 45 H • • 1 5 2.7 6 4 60 65 113 22 0.05 0.550 30 20 H S S • • 1 3 5 25 20 38 45 83 45 0.05 0.700 50 2501 I S S PDIP5 <6 1 0.004

IXTH24N45

Contextual Info: I X Y S IDE CORP 0D003S5 » I □ IX Y S IXTH24N50, 45 IXTM24N50, 45 Sym. IXTH24N45 IXTM24N45 IXTH24N50 IXTM24N50 Unit Drain-Source Voltage 1 Vd s s 450 500 Vdc Drain-Gate Voltage (Rq s = 1.0MÎÎ) (1) Vdg r 450 500 Vdc Gate-Source Voltage Continuous Gate-Source Voltage Transient

Nec K 872

Abstract: nec k 813 NES2427P-45
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES2427P-45 45 W S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES2427P-45 is a 45 W push-pull type GaAs MES FET designed for high power transmitter applications for WLL repeater and base station systems. It is capable of delivering 45 W of output power CW with high linear gain,

specifications of ic 1408

Abstract: JT6M45-AS T6M45 QFP67-P-1420-0 kl3 59 pin diagram of IC 1408
Contextual Info: TOSHIBA T6M45JT6M45-AS TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T6M45, JT6M45-AS T6M 45, JT6M 45-A S C M O S 1 CHIP LSI FOR LCD ELECTRO N IC C A LC U LA T O R The T6M 45, JT6M45-AS is a 1 chip microcomputer for 12digits 2-memory or 10-digits 2-memory electronic

BSC 031 N 06 NS 3

Abstract: 21N50 ixth21n50 IXTM21N50
Contextual Info: I X □ I X Y S CORP IDE D | 4t.flL,22b 000Q3S4 T 7 - 3 Y S ? | - /S ' MegaMOS FETs IXTH21N50, 45 IXTM21N50, 45 R A T IN G S Parameter Drain-Source Voltage 1 1-OMfl) (1) Gate-Source Voltage Continuous IXTH21N50 IXTM21N50 Unit Voss 450 500 Vdc Vdgr 450

D291S45T

Abstract: Gleichrichter D921
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 921 S 45 T 62,8 Anode A K Kathode 3,5± VWK January Schnelle Gleichrichterdiode Fast Diode D 921 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values

D291S45T

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 921 S 45 T 62,8 Anode A K Kathode 3,5± VWK January Schnelle Gleichrichterdiode Fast Diode D 921 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values

D291S45T

Abstract: t04 68 diode DIN 921 T-30007
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 921 S 45 T 62,8 Anode A K Kathode 3,5± VWK January Schnelle Gleichrichterdiode Fast Diode D 921 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values

DIODE 921

Abstract: D291S45T
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 921 S 45 T 62,8 Anode A K Kathode 3,5± VWK January Schnelle Gleichrichterdiode Fast Diode D 921 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values

Contextual Info: eupec European PowerSem iconductor and Electronics Com pany Marketing information D 1381 S 45 T 062,8 VW K July 1996 S ch n elle G le ich rich te rd io d e Fast D iode Elektrische Eigenschaften Höchstzulässige Werte D 1381 S 45 T Electrical properties /

D291S45T

Abstract: 1381
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 1381 S 45 T ø62,8 A C ±0,1 3,5 VWK July 1996 Schnelle Gleichrichterdiode Fast Diode D 1381 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values

IXTH26N50

Abstract: IXTH26N45 ixtm26n50 TL 1074 CT
Contextual Info: I X Y S IDE CORP 1 ° Mbflb52b 000D350 3 I -' □ IX Y S MegaNIOS FETs IXTH26N50, 45 IXTM26N50, 45 MAXIMUM RATINGS Parameter Sym. IXTH26N45 IXTM26N45 IXTH26N50 IXTM26N50 Unit Drain-Source Voltage 1 Vdss 450 500 Vdc V dgr 450

Contextual Info: W irew o und R esistors 4 KNH Type Dimension (mm) S e rie s KNH-5W KNH-10W KNH-15W KNH-20W KNH-30W KNH-40W KNH-50W KNH-60W KNH-80W KNH-100W A s 1.5 B*1.5 C± 3 11.0 11.0 15.5 19.0 19.0 19.0 28.0 28.0 28.0 28.0 30 45 45 50 75 90 75 90 115 140 16 16 17 19

SO42

Abstract: skn 220 semikron SKN 71 so 32 skn4508
Contextual Info: s e MIKRDN Rectifier Diodes Ifrm s m axim um values for continuous operation IV r s m 80 A V rrm I 150 A SKN 45 SKN 70 SKN 71 IfaV (sin. 1 8 0 ; Tease = • ■ ■) V 5 0 A (1 1 8 °C ) 9 5 A (1 0 0 ° C ) 200 SKN 45/02 SKR 45/02 SKN 70/02 SKR 70/02 SKN 71/02 SKR 71/02*

ASI10644

Abstract: TVU002 130 k 10
Contextual Info: TVU002 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI TVU002 is Designed for A 45° D FEATURES: • • • Omnigold Metalization System S B S G C D J E MAXIMUM RATINGS I F G IC 800 mA VCBO 45 V 25 V VCEO 4.0 V VEBO PDISS

ASI10643

Abstract: TVU001
Contextual Info: TVU001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI TVU001 is Designed for A 45° FEATURES: S B • • • Omnigold Metalization System D S G C D J I E MAXIMUM RATINGS F G IC 1.2 A VCBO 45 V 25 V VCEO 3.5 V VEBO PDISS

ASI10640

Contextual Info: TVU0.5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI TVU0.5 is Designed for A 45° FEATURES: • • • Omnigold Metalization System D S B S G C D J I E MAXIMUM RATINGS F IC 2.0 A VCBO 45 V H K 25 V VCEO 3.5 V VEBO PDISS

55-M12-A

Abstract: 7472
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information D 56 S 40.45 D 56 U 40.45 15 5,5 SW27 M12 Type Circuit symbol Cathode Anode S Connection pin Case U Case Connection pin Ma 1-BE / 23 Jun 1993 Schnelle Gleichrichterdiode Fast Diode