45 S 28 Search Results

Contextual Info: M* 1 *1 _ P U M A 2 S 1 0 0 0 _ mol aic PUMA 2S1000-35/45/55/70 Issue 3.1 : April 1992 ADVANCE PRODUCT INFORMATION Mosaic S em iconductor Inc. f Pin Definition 1,048,576 bit CMOS High Speed Static RAM 1 Features Very Fast access times of 35/45/55/70 ns.

DI 156 S

Abstract: KA206 THY 101 S2614 kc202e k*206
Contextual Info: SCR/Diode Modules IGBT Presspacks Stacks Outlines Accessories Explanations 52 KA 20.X-V 91 115 91(115) Anschluß an Stromschienen muß elastisch erfolgen. 29(41) 45 (.) für Bauelemente s=26 Anzahl Thy./Di. Typ L1 L2 6 (s=14mm) 4 (s=14mm) 2 (s=14mm) 6 (s=26mm)

Contextual Info: JUN 10 1982 32K x 32 SRAM moìaic PUMA 2S1010-030/35/45/55/70 Issue 2.0 : May 1992 PRELIMINARY S e m ic o n d u c to r Inc. Pin Definition 1,048,576 bit CMOS High Speed Static RAM Features Ultra Fast access times of 30/35/45/55/70 ns. Configurable as 32 / 16 / 8 bit wide output.

Contextual Info: 3U0 i »yyj^ 256K x 8 CMOS SRAM molale MSM8256-45/55/70 Issue 2.1 : August 1992 PRELIMINARY S e m ic o n d u c t o r In c Pin Definition 262,144 x 8 CMOS High Speed Static RAM Package Type- •s \v Features Very Fast Access Times of 45/55/70 ns JEDEC Standard 32 pin Footprint

Contextual Info: " f i ? D e | 30^0137 0DD2E33 S GENL INSTR/ POWER T ' 2 3 '•* o'? * ■V* "Í>V-, S L P 2 0 -P S E R IE S >i -jtSCHOTTKy RECTIFIER GENERAL INSTRUMENT VOLTAGE RANGE 20 to 45 Volts CURRENT 20 Amperes .635 16,13) *".625 (15.88) TO-3P .120 (3.05) D IA .115 (2.9)

2SK2079-01M

Abstract: 2SK2079 2SK2001-01M 2SK1549 2SK900 2SK901 2SK902 2SK905 2SK906 2SK947M
Contextual Info: MOSFETs F-l Series Low RdS ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miiximum Ratin as I d (A) V d s s (V ) 45

Contextual Info: MTE » Preliminary • SñbñMSb DDG2Q61 EMG IfilMl llllr iilll MATRA ■ M H S _ T - ^ January 1991 N H S M 65M724 HI-REL DATA SHEET 128 k X 8 SRAM MODULE FEATURES . . . HIGH DENSITY 2 MEGABIT SRAM MODULE MILITARY ACCESS TIME; 35*/45/55 ns LOW POWER CONSUMPTION

38dec

Contextual Info: Al ABRIDGED VERSION SSI 34P3400 ¿w 45 Mbit/s Read Channel w/Adaptive Threshold Qualifier c o tiM k m s A TDK Group/Company Advance Information January 1996 DESCRIPTION FEATURES The SSI 34P3400 device is a high performance BiCMOS single chip read channel IC that contains all

S-AV6

Abstract: VCC-VCON-12-5V 5-53P toshiba s-av6
Contextual Info: S-AV6 TOSHIBA S- AV6 TO SHIBA RF POWER AMPLIFIER M O DU LE Unit in mm VHF M AR IN E FM RF POWER AMPLIFIER M O DU LE High Gain : Po^28W, Gp^21.4dB, ^T^45% 2 — R 2 .1 ± 0 . 2 t 4 -Q 5 ÌQ .1 5 M A X IM U M RATINGS Tc = 25°C CHARACTERISTIC Frequency Range

general electric

Contextual Info: G L-89 2 D E S C R IP T IO N A N D R A T IN G E T I- 1 7 3 PAGE 1 4-45 V mm *-vS f , a o . ' . : I &SSÌ £ v>. • SÄ» !? i ü ^ v í ' 'V ' ' >•' <v f l p s»5*!SÏ‘*s • «, * _ . , s . PLIOTRON DESCRIPTION The 892 is a three-electrode pliotron of the

Contextual Info: 2 Way-90° Power Splitter/Combiner QCS-332+ Typical Performance Curves Insertion Loss Isolation 6.0 50 Insertion Loss S-1 5.5 40 4.5 35 Isolation dB Insertion Loss (dB) 45 Insertion Loss S-2 5.0 4.0 3.5 3.0 30 25 20 2.5 15 2.0 10 1.5 5 1.0 1800 1950 2100

ITT 435-1

Contextual Info: S iW H S electronic June 1992 HM 65798 HI-REL DATA SHEET_ 64 k x 4 HIGH SPEED CMOS SRAM FEATURES . TTL COMPATIBLE INPUTS AND OUTPUTS • FAST ACCESS TIME : 25*/35/45/55 ns . LOW POWER CONSUMPTION ACTIVE: 660 mW STANDBY : 190 mW . WIDE TEMPERATURE RANGE : - 55°C TO + 125°C

GP214

Contextual Info: S-AV7 RF POWER AMPLIFIER MODULE Unit in mm VHF POWER AMPLIFIER MODULE HAM FM FEATURES : 2 —R 2.1± C L 2 52.9 . Output Power P0 ^ 28W . Minimum Gain Gp=21.4dB . Efficiency ¡î'j'è 45% . 500 $ 4-a5±ai5 Input/Output Impedance . Guaranteed Stability MAXIMUM RATINGS (Tc=25 C)

4042

Abstract: mh 4543
Contextual Info: C H I P L I N E S I D E S I D E ELECTRICAL SPECIFICATIONS @ 25°C unless otherwise noted: D.C. RESISTANCE @20°C : 4-6; 10-12; 16-18; 22-24, 0.40 Ohms max. 1-3; 7-9; 13-15; 19-21, 0.80 Ohms max. 25-27; 28-30; 31-33; 34-36; 37-39; 40-42; 43-45; 46-48, 1.10 Ohms max.

puerto

Abstract: transistor adaa ISOmodem schematic diagram of aoc monitor "Silicon Laboratories" -si3014 si3021 560002 CTR21 Si2414 Si2433 Si2456
Contextual Info: Si2456/Si2433/Si2414 V.90, V. 34, V. 32 B I S I S O M O D E M WITH I N T E G R A T E D G L O B A L DAA Integrated DAA ITU-T, Bell 300 bps up to 56 kbps V.42, V.42bis Automatic rate negotiation Capacitive isolation S Data modem formats i2 45 6 Features

27L08-45

Abstract: 2708 eprom 27L08 2708-45 74LS TTL 245 TMS 2708 JL a1023 ansi y32.14 diagram 2708 memory TMS2708
Contextual Info: TMS 2708-35 JL. TMS 2708-45 JL, TMS 27L08-45 JL 1024-WORD BY 8-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES MOS LSI D E C E M B E R 1 9 7 9 - R E V I S E D M A Y 1982 1024 X 8 Organization A ll Inputs and O utputs F ully T T L Compatible 24-PIN CER P AK D U A L -IN -L IN E PACKAG E

TP0610T

Abstract: VN2110K1 ZVN3320F TN2124K1 vp3306 vp3310
Contextual Info: ^ S u p ertex ine. SOT-23 MOSFET Products Industry Part Number Polarity b v dss ^GStth V min) V (max) R dS(ON) ^DS(ON) Il (max) VGS (V) lD (mA) il (max) Ve s (V) C|SS C0ss ID (mA) PF PF Supertex Part Number TN2124K1 2N7001 N 240 2.5 85 10 50 45 4.5 20 30

IGD 507 an

Contextual Info: m CDIKV Product S pecificatio n s D ecem ber 1 9 9 7 CFK2162-P5 2.3 to 2.5 GHz +34 dBm Power GaAs FET 1 of 4 Features □ High Gain □ +34 dBm Power Output □ Proprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third Order Products

ABP1

Abstract: 50tb1
Contextual Info: 70 mm 2.75" 32 8 33 9 34 10 35 11 36 12 37 13 38 14 39 15 40 16 41 17 42 18 43 19 44 20 45 21 46 22 47 23 48 24 49 25 50 S FEM S 1 26 2 27 3 28 4 29 5 30 6 31 7 RD50 150.1 mm (5.91") S 26 1 1 TB1:A 2 TB1:C 3 TB1:E 4 TB1:G 5 TB1:I 6 TB1:K 7 TB1:M 8 TB1:O

lv 02a

Abstract: SLA4046 SLA404T SLA4115 SLA411T SLA4162 SLA4239 SLA423T 3K10
Contextual Info: S-MOS SYSTEMS A DATA SHEET S e ii E p w n ASIC PRELIMINARY SLA40000 Series SLA40000 SERIES HIGH SPEED GATE ARRAY September 199B • DESCRIPTION The S-M O S SLA4DODO Series is a D.45 m icron se a-of-g ates gate array. T he se rie s consists of 8 arrays ranging from 13K to 2S8K available gates with D LM a n d TLM , a vailab le IK> co un t from 123

GSC2117

Abstract: TC 4863 1117 S Transistor adj 939 TC 4863 DB
Contextual Info: ISSUED DATE :2006/04/12 REVISED DATE : G S C 2 11 7 7 5 0 m A C M O S P o s i t i v e Vo l t a g e R e g u l a t o r Description The GSC2117 of positive, linear regulators feature low quiescent current 45 A typ. with low dropout voltage, making then ideal for battery applications.

ASI10666

Abstract: UFT30-28
Contextual Info: UFT30-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UFT30-28 is Designed for Class A and B Power Ampliifiers Operating up to 500 MHz. PACKAGE STYLE .380 4L FLG. B .112 x 45° FEATURES: A S D Ø.125 NOM. FULL R J • PG = 7.0 dB min. at 25 W/400 MHz • ηD = 60 % Typical

Contextual Info: ill# ICW 0RKS W42C32-05 Spread Spectrum Frequency Timing Generator Features Key Specifications • Maximized EMI suppression using 1C W O R K S ’ Spread Spectrum technology 250 ps cycle-to-cycle jitter 45/55 duty cycle around 1,4V • Generates a spread spectrum timing signal

208H

Contextual Info: 2 . Sch em atic: 1. M echanical D im ensions: Blue A — V. /• Gray 0.115 Max — - III I J III I I t 0.110 s J I irown 3. E lectrical Sp ecification s: OCL: 6 8 0 n H ± 1 0% 2 5M H z 0.1V 0.020 DCR: 1.47 O hm s Max 0.080 Max DC Current: 400m A Max Q: 45 Min @ 100M H z