44TBS03 Search Results

HM624256

Abstract: hm624256lp static ram 4802
Contextual Info: HITACHI/ LOGIC/ARRAYS/PIEM STE 44TbS03 D HM624256 Series- G01bS27 5 T -4 6 -2 3 -1 4 262144-WORD x 4-BIT HIGH SPEED CMOS STATIC RAM The Hitachi HM624256 is a high sp ee d 1M static RAM organized a s 256-kword x 4-bit. It realizes high sp ee d a cc e ss

Contextual Info: 5QE D 44^503 G01341Q 5 HITACHI/ L0GIC/ARRAYS/MÉÎ1 0 H IT A C H I S e p t e m b e r , 1985 CMOS GATE ARRAYS i HD61 SERIES DESIGNER'S MANUAL AND PRODUCT SPECIFICATION HITACHI/ LOGIC/ARR'A YS/MEM SQE D • 4 4TLS03 0G13411 4 T -42-11-09 CMOS GATE ARRAYS HD61 SERIES

00534

Abstract: GD234
Contextual Info: b lE H M D 5 1 1 6 4 1 0 • S MMTbPOB e r ie s 0023404 BBT H IT A C H I/ ■ H I T S l o g i c /A R R A Y S / M E M 4,194,304-word x 4-bit Dynamic Random Access Memory T he H M 5116410 is a CM OS d y n am ic RAM organized 4,194.304 words x 4 bits. It employs the

Contextual Info: HN62448I Series 524288-word x 16-bit/1048576-word X 8-bit CMOS Mask Programmable ROM HITACHI A D E -2 0 3 -7 7 2 A Z R ev. 1.0 A p r. 2 4, 1997 Description The Hitachi HN62448I series is a 8-Mbit CMOS mask-programmable ROM organized either as 524288word x 16-bit or 1048576-word x 8-bit. It has a high speed normal access time of 100 ns. It is suitable for

Contextual Info: HB526C264EN-10IN, HB526C464EN-10IN 1.048.576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-737A Z Rev. 1.0 Feb. 7, 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family,

Contextual Info: HM5241605C Series 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI A D E - 2 0 3 - 1 8 6 A Z R e v . 1 .0 M ay. 22, 1996 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5241605C is offered in 2

414SI

Abstract: HM538254J-7 srt hitachi HM538254TT
Contextual Info: L.1E D • MMTbSDB GGElHlb HM5 3 8 2 5 3 S eries HM5 3 8 2 5 4 S eries hitachi S7 b ■ H I T E / logic /a r r a y s /mem — hc,-z3 - zg> 2 6 2 ,1 4 4 -w o rd x 8-b it M ultiport CM O S V id eo RAM Description The HM 538253/H M 538254 is a 2-M bit multiport

HN27V101AFP-25

Abstract: pgri TTP-32P
Contextual Info: H N 2 7 V 1 0 1 A Preliminary S e r ie s 1M 128K x 8-bit OTP EPROM • DESCRIPTION The Hitachi HN27V101A isa 1-MegabitOne-Time Programmable Electrically Programmable Readonly Memory organized as 131,072 x 8-bits. The HN27V101A features a low power supply voltage and low

Contextual Info: HM678127UH Series Under development 131072-words x 8-bits High Speed Static Access Memory Features Pin Arrangement • 131072-words x 8-bits organization • Directly TTL compatible input and output • Choice of 5.0 V or 3.3 V power supplies for output buffers

Contextual Info: HITACHI/ LOGIC/ARRAYS/ IEM 4 ^ 5 0 3 IE 92D - HD7 4 HC174 # DOlDWai 3 10421 T-46-07-1Û D Hex D-type Flip-Flops (with Clear) This device contains 6 master-slave flip-flops with a common • PIN ARRANGEMENT clock and common dear. Data on the D input having the

Contextual Info: HB526A264DB Series 1,048,576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-607 Z Preliminary Rev. 0.1 May. 20,1997 Description The HB526A264DB is a lM x 64 x 2 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 8 pieces of 16-Mbit SDRAM (HM5216805TT/HM5216805LTT)

Contextual Info: HM5164165A Series HM5165165A Series 4194304-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-453 B (Z) Preliminary Rev. 0.2 Jun. 12, 1996 Description The Hitachi HM5164165A Series, HM5165165A Series are CMOS dynamic RAMs organized as 4,194,304-word X 16-bit. They employ the most advanced CMOS technology for high performance

Contextual Info: HM514260A/AL-6R Series HM51S4260A/AL-6R Series Preliminary 262,144-word x 16-bit Dynamic Random Access Memory |_|ITAPL-11 m Rev. 0.1 May. 31,1994 I I The Hitachi HM514260A/AL are CMOS dynamic RA M o rg a n iz e d as 2 6 2 ,1 4 4 -w o rd x 1 6 -b it. H M 514260A /A L have realized h igher density,

Contextual Info: Preliminary H M 5 1 1 6 1 6 0 A / A L S e r ie s 1,048,576-word x 16-bit Dynamic Random Access Memory The H ita ch i H M 5116160A /A L is a CM O S dynamic RA M organized 1,048,576 words x 16 b its. It em ploys the most advanced CM O S technology for high performance and low power.

LU120N

Abstract: hm658128lp HM658128 HM658128LFP-10 LR 120N
Contextual Info: HITACHI/ LOGIC/ARRAYS/NEM 31E P • 441L203 OOlbba'I b ■ HM658128 Series- r-HU'23-25 131072-word x 8-bit High Speed CMOS Pseudo Static RAM The Hitachi HM658128 is a pseudo-static RAM organized as 131,072-word x 8-bit. HM658128 realizes low power consump­

Contextual Info: HM514400C/CL Series 1,048,576-w ord x 4-b it D ynam ic Random Access M em ory HITACHI The H itachi H M 514400C is a CM OS dynam ic R A M o rg a n iz e d 1,0 4 8 ,5 7 6 -w o rd x 4 -b it. HM 514400C has realized higher density, higher performance and various functions by employing

dbl 2003

Abstract: HN27C256AG-10
Contextual Info: HN27C256A Series Maintenance Only 256K 32K x 8-bit UV and OTP EPROM • DESCRIPTION The Hitachi H N 27C 256A isa256-K ilobit Ultraviolet Erasable and One-Time Program mable Electrically Programmable Read Only M em ory organized as 32,768 x 8-bits. The HN27C256A features fast address access tim es and low