44TB2G3 Search Results

SIP Arrays

Abstract: Jb203 0g23
Contextual Info: LIE î> WM 44Tb2G3 HB56C48 Series G02373D 1 73 • H I T E HITACHI/ logic/arrays/m en 4,194,304-Word x 8-bit High Density Dynamic RAM Module The HB56C48 is a 4M x 8 dynamic RAM module, m o u n te d eig h t 4 M b it D R A M H M 5 14102A S se a le d in S O J p a c k a g e . A n o u tlin e o f the

Contextual Info: HM51W17805B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-462B Z Rev. 2.0 May. 30,1996 Description The Hitachi HM51W17805B is a CMOS dynamic RAM organized 2,097,152-word X 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805B offers

Contextual Info: blE D • MM^baG3 G0E32fi0 1T4 ■ H I T 2 H M 5 1 4 1 9 0 , H M 5 1 4 1 9 0 L S e r i e s -262,144-word x 18-bit Dynamic Random Access Memory HITACHI/ LOGIC/ARRAYS/ NEM The Hitachi HM 514190 are CM OS dynamic RAM organized as 262,144-w ord x 18-bit. HM 514190

Contextual Info: 5QE D 44^503 G01341Q 5 HITACHI/ L0GIC/ARRAYS/MÉÎ1 0 H IT A C H I S e p t e m b e r , 1985 CMOS GATE ARRAYS i HD61 SERIES DESIGNER'S MANUAL AND PRODUCT SPECIFICATION HITACHI/ LOGIC/ARR'A YS/MEM SQE D • 4 4TLS03 0G13411 4 T -42-11-09 CMOS GATE ARRAYS HD61 SERIES

Contextual Info: HN62448N Series 524288-word X 16-bit/1048576-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-385B Z Rev. 2.0 Oct. 2 1 ,1996 Description The Hitachi HN62448N is a 8-Mbit CMOS mask-programmable ROM organized either as 524288-word by 16-bits or as 1048576-words by 8-bits. And a high speed access of 100/120 ns is the most suitable to the

A03404

Contextual Info: HM67S18258 Series 262,144-words x 18-bits Synchronous Fast Static RAM HITACHI ADE-203-661A Z Product Preview Rev. 1 Feb. 21 ,1997 Features • 3.3V ± 5% Operation • LVCMOS Compatible Input and Output • Synchronous Operation • Internal self-timed Late Write

Contextual Info: HM67S36130 Series 131,072-words x 36-bits Synchronous Fast Static RAM HITACHI ADE-203-659A Z Product Preview Rev. 1 Feb. 21,1997 Features • 3.3V ± 5% Operation • LVCMOS Compatible Input and Output • Synchronous Operation • Internal self-timed Late Write

Contextual Info: HM514405C Series Preliminary 1,048,576-word x 4-bit Dynamic Random Access Memory HITACHI The H itachi H M 514405C is a CMOS dynam ic RA M o rg a n iz e d 1 ,0 4 8 ,5 7 6 w ords x 4 b its. HM514405C has realized higher density, higher performance and various functions by employing

Contextual Info: HM621664HBI Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-786 A Z Rev. 1.0 May. 19,1997 Description The HM621664HBI is an asynchronous high speed static RAM organized as 64-kword x 16-bit. It realize high speed access time (20 ns) with employing 0.8 |im CMOS process and high speed circuit designing

Contextual Info: HM5216808C Series HM5216408C Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM SSTL-3 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM (SSTL-3) HITACHI ADE-203-617 (Z) Preliminary Rev. 0.0 Jul. 10, 1996 Description A ll inputs and outputs are referred to the rising edge of the clock input. The HM5216808C Series,

Contextual Info: HB56SW864ES-6/7 8,388,608-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-776A Z Rev. 1.0 Apr. 23,1997 Description The HB56SW864ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Contextual Info: HB56U464EJ Series 4,194,304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-716A Z Rev. 1.0 Jan. 27,1997 Description The HB56U464EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Contextual Info: HB56A272E-5/6/7 2,097,152-wordx72-bit High Density Dynamic RAM Module HITACHI A D E -2 0 3 -7 4 3 A Z R ev. 1.0 F e b .2 0 ,1 9 9 7 Description The HB56A272E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The HB56A272E is a 2M

Contextual Info: HB526C264EN-10IN, HB526C464EN-10IN 1.048.576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-737A Z Rev. 1.0 Feb. 7, 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family,

Contextual Info: HB56UW272EJN Series, HB56UW264EJN Series 2.097.152-word x 72-bit High Density Dynamic RAM Module 2.097.152-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-717A Z Rev.1.0 Jan. 27,1997 Description The HB56UW272EJN, HB56UW264EJN belong to 8 Byte DIMM (Dual In-line Memory Module) family,

Contextual Info: HB56AW 872E Series 8388608-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-707A Z Rev. 1.0 Jan. 10,1997 Description The HB56AW872E belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been developed an optimized main memory solution for 4 and 8-byte processor applications.

AR6F

Contextual Info: HB56SW464DB Series 4,194,304-Word x 64-Bit High-Density Dynamic RAM Module HITACHI ADE-203-758A Z Rev. 1.0 March 20,1997 Description The HB56SW464DB is a 4 Mbit x 64 dynamic RAM small-outline dual in-line memory module (SODIMM), mounted in 16 pieces of 16-Mbit DRAM (HM51W16405) sealed in a TCP package and one

am/256K-BIT

Contextual Info: HM5117400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-369A Z Rev. 1.0 Nov. 15, 1995 Description The Hitachi HM5117400B is a CMOS dynamic RAM organized 4,194,304 word x 4 bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117400B offers Fast Page Mode

B203 A2

Abstract: HM5118165B HM5118165BJ-6 HM5118165BJ-7 HM5118165BJ-8 HM5118165BLJ-7 HM5118165BLJ-8 HM5118165BTT-6 HM5118165BJ6 Hitachi Scans-001
Contextual Info: HM5118165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-000 Z Preliminary Rev. 1.0 Dec. 1, 1995 Description The Hitachi HM5118165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118165B offers Extended

M514800A

Abstract: m514800
Contextual Info: HM514800A/AL Series HM51S4800A/AL Series Preliminary 52 4,28 8-w o rd x 8 -b it D y n a m ic R a n d o m A c ce ss M em ory T he H itach i H M 514800A are C M O S d ynam ic R A M o rg a n iz e d as 5 2 4 ,2 8 8 -w o rd x 8 -b it. HM 514800A have realized higher density, higher

hm514800clz7

Abstract: m514800c m514800cltt HM514800CZ HM514800CLZ HM514800CLZ-7 parameter hitachi vk 45
Contextual Info: HM514800C/CL Series HM51S4800C/CL Series 524,288-w ord x 8-bit Dynam ic Random Access M em ory HITACHI The H itachi H M 514800C are CM OS dynam ic R AM o rg a n iz e d as 5 2 4 ,2 8 8 -w o rd x 8 -b it. HM514800C have realized higher density, higher performance and various functions by employing

M514400

Abstract: m5144 hitachi 12.1 hm514400b M514400BS M514400B
Contextual Info: HM514400B/BL Series 1 ,0 4 8 ,5 7 6 -w o rd x 4 -b it D y n a m ic R a n d o m A c c e s s M e m o ry T he H itach i H M 514400B is a CM O S dynam ic R A M o rg a n iz e d 1 ,0 4 8 ,5 7 6 w o rd s x 4 b its. HM 514400B has realized higher density, higher perform ance and various functions by employing

Contextual Info: HM51W16160A Series HM51W18160A Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-217B Z Rev. 2.0 Jul. 2, 1996 Description The Hitachi HM51W16160A Series, HM51W18160A Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance

Contextual Info: H ITACH I/ LO GIC /A RRA YS /tl Efl TS »Ë| 4 ^ 5 0 3 0010540 O ^J~ 92D 10 540 HD74HC589 D T'9¿-Of-OS # 8-bit Serial or P arallel-input/Serial output Shift Register w ith 3 -s ta te outputs The H D 74H C589 is sim ilar in function to the H D 74H C597,