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Samsung Electronics Co. Ltd


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44S4020C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 44S4020C CMOS SDRAM Revision History Revision ,4 November 1997 •tRDL has changed 10ns to 12ns. •Binning -10 does not meet PC 100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. REV. 4 Nov. '97 ELECTRONICS CMOS SDRAM	OCR Scan	KM44S4020C 44S4020C 10/AP	PDF
KM44S4020CTG Abstract: KM44S4020C Contextual Info: 44S4020C CMOS SDRAM 2M x 4BH x 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The 44S4020C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 2,097,152 words by 4 bits, fabricated with SAMSUNG'S high performance CMOS technol	OCR Scan	KM44S4020C KM44S4020C KM44S4020CTG	PDF

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Contextual Info: 44S4020C CMOS SDRAM Revision History Revision ,4 November 1997 •tRDL has changed 10ns to 12ns. •Binning -10 does not meet PC 100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. REV. 4 Nov. '97 ELECTRONICS CMOS SDRAM

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KM44S4020C 44S4020C 10/AP

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KM44S4020CTG

Abstract: KM44S4020C
Contextual Info: 44S4020C CMOS SDRAM 2M x 4BH x 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The 44S4020C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 2,097,152 words by 4 bits, fabricated with SAMSUNG'S high performance CMOS technol

OCR Scan

KM44S4020C KM44S4020C KM44S4020CTG

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Samsung Electronics Co. Ltd KM44S4020CT-G10

44S4020C Datasheets Context Search

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