44P3W Search Results

tsop II 44

Abstract: TSOP 44-40 Package 44P3W-R
Contextual Info: 44P3W-R Plastic 44pin 400mil TSOP EIAJ Package Code TSOP II 44/40-P-400-0.80 JEDEC Code – Weight(g) 0.47 Lead Material Alloy 42 e b2 l2 F 32 23 ME 35 Recommended Mount Pad E Symbol 1 10 13 A 22 c L D L1 HE 44 e y b A2 Detail F A A1 A2 b c D E e HE L

TSOP 44-40 Package

Contextual Info: 44P3W-S Plastic 44pin 400mil TSOP EIAJ Package Code TSOP II44/40-P-400-0.80 JEDEC Code – Weight(g) 0.47 Lead Material Alloy 42 e b2 l2 F 13 22 ME 10 Recommended Mount Pad E Symbol 44 35 32 A 23 c L D L1 HE 1 e y b A2 Detail F A1 A A1 A2 b c D E e HE

44P3W-H

Abstract: PTSB0044GA-A 44P3W
Contextual Info: JEITA Package Code P-TSOP 2 44-10.16x18.41-0.80 RENESAS Code PTSB0044GA-A Previous Code 44P3W-H MASS[Typ.] 0.4g c F 23 NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. *1 E Z Z1 Detail G 1 Reference

TSOP-II 44

Contextual Info: 44P3W-Q Plastic 44pin 400mil TSOP EIAJ Package Code TSOPII 44-P-400-0.80 Weight(g) 0.47 JEDEC Code – Lead Material Alloy 42 e b2 F 1 E Recommended Mount Pad Symbol 44 23 A L c L1 HE ME I2 22 D e b y A2 Detail F A1 A A1 A2 b c D E e HE L L1 y ME I2 b2

ME-44

Contextual Info: 44P3W-P Plastic 44pin 400mil TSOP EIAJ Package Code TSOPII 44-P-400-0.80 Weight(g) 0.47 JEDEC Code – Lead Material Alloy 42 e b2 I2 F 23 E Recommended Mount Pad Symbol 22 1 A L c L1 HE ME 44 D e b y A2 Detail F A1 A A1 A2 b c D E e HE L L1 y ME I2 b2

TASC 20-5

Abstract: M5M44265CJ M5M44265C-6
Contextual Info: MITSUBISHI LSIs MITSUBISHI LSIs M5M44265CJ,TP-5,-6,-7, M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S -5S,-6S,-7S EDO HYPER PAGE MODE 4194304-BIT (262144-WORD 16-BIT) DYNAMIC RAM EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY BY 16-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs with

Contextual Info: MITSUBISHI LSIs 2001.5.17 Ver.F Notice: This is not a final specification. Some parametric limits are subject to change M5M54R08AJ,TP-10,-12 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M54R08A is a family of 524288-word by 8-bit

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

BC244

Abstract: M5M51016BTP A-1540 a1540 A7423
Contextual Info: 9 9 JulJul ,1997 ,1997 MITSUBISHI LSIs LSIs MITSUBISHI M5M51016BTP,RT-10VL, M5M51016BTP,RT-10VL, -10VLL -10VLL 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM

TP-15

Contextual Info: MITSUBISHI LSIs 1997.3.18 M5M564R16CJ,TP-10,-12,-15 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 1048576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) ADDRESS INPUTS

M5M411665ATP3

Abstract: M5M411665AJ M5M411665A ATP3 M5M411665ATP2 M5M4116
Contextual Info: MITSUBISHI LSIs Preliminary Spec. M5M411665AJ/ATP2/ATP3-5,-6,-7,-5S,-6S,-7S Rev. 1.2 HYPER PAGE MODE 1,048,576-BIT(65,536-WORD BY 16-BIT) DYNAMIC RAM DESCRIPTION FEATURES CAS Address OE access access access time time time (max.ns) (max.ns) (max.ns) Cycle

M5M54R16AJ

Contextual Info: MITSUBISHI LSIs 2000.6.21 Ver.D Notice: This is not a final specification. Some parametric limits are subject to change. M5M54R16AJ,ATP-12 4194304-BIT 262144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M54R16A is a family of 262144-word by 16-bit PIN CONFIGURATION (TOP VIEW)

a1ca

Abstract: Electric double-layer capacitor
Contextual Info: weuNnN*RY M5M4V16807ATP, RT-10,-12,-15 16M 2097152-WORD BY 8-BIT SYNCHRONOUS DYNAMIC RAM DESCRIPTION The synchronous DRAM M5M4V16807A incorporates data PIN CONFIGURATION (TOP VIEW) registers and a multiplexer onto a 2097152-word by 8-bit DRAM. Very high speed consecutive access is realized by on-chip serialparallel conversion. The RAM is fabricated with the high

Contextual Info: MITSUBISHI LSIs M 5 M 4 4 1 9 A J , T P , R T - 6 , - 7 , - 8 , - 6 S , - 7 S , - 8 S FAST PAGE MODE 4718592-BIT 262144-WORD BY 18-BIT DYNAMIC RAM DESCRIPTION This is a family of 2 6 2 1 4 4 -word by 18-bit dynamic RAMS, fabricated with the high performance CMOS process, and is

Contextual Info: MITSUBISHI LSI« M 5 M 5 1 0 1 6 A T P , R T - 1 0 V L ,-1 O V L L 1048576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) T h e M 5 M 5 1 0 1 6 A T P , R T a re a 1 0 4 8 5 7 6 -b it C M O S static R A M o rg a n ize d as 6 5 5 3 6 -w o rd by 16 -b lt w hich a re fa b ric a te d using

M5M4V4260

Contextual Info: M 5 M 4 V 4 2 6 0 J , T P , R T - 6 ,-7 ,-8 ,- 6 S , - 7 S , " 8 S FAST PAGE MODE 4194304-B IT 262144-W O R D BY 16-B IT DYNAM IC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fam ily o f 262144-w ord by 16-bit dynamic RAMs, fabricated w ith the high performance CMOS process, and is

RT-6

Contextual Info: MITSUBISHI LS Is M5M4V4280J,TP,RT-6,-7,-8,-6S,-7S,-8S PAGE MODE 4718592-BIT 262144-WORD BY 18-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family of 262144-word by 18-bit dynamic RAMs, fabricated with the high performance CMOS process, and is

Contextual Info: MITSUBISHI LSts M 5 M 4 4 1 7 0 A J ,L ,T P ,R T - 6 ,- 7 ,- 8 ,- 1 0 JM 1 o m 2 FA S T PA G E MODE 4 1 9 4 3 0 4 -B IT 2 6 2 1 4 4 -W O R D B Y 16-BIT DYN AM IC RAM '9 0 D E S C R IP T IO N - 12-0 8 PIN C O N FIG U R A T IO N (TOP V IEW } This is a family of 2 6 2 1 4 4 -w o rd by 16-bit dynamic RAM s.

432W6

Abstract: 48P4B hssop 44P3W-R 28P0 5P5T tsop 2-54 42P9R 70P3S-M 479F7G
Contextual Info: MITSUBISHI INTEGRATED CIRCUIT PACKAGES LIST OF PACKAGE CODES CLASSIFIED ACCORDING TO PIN NUMBER 1. LIST OF PACKAGE CODES CLASSIFIED ACCORIDING TO PIN NUMBER Pin Count Structure Type Lead Pitch mm 5 P P P P P P C C P P P C P P P P P P P P C P P P P P P P

r1lv0414c

Abstract: R1LV0414C-I R1LV0414CSB-5SI R1LV0414CSB-7LI
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: bSM'iaSS 0023Ô45 03^ • M IT I MITSUBISHILSIs M 5 M 4 V 4 1 6 0 J ,T P ,R T - 6 ,-7 ,-8 ,- 6 S ,- 7 S ,- 8 S FAST PAGE MODE 4194304-BIT 262144-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family of 262144-word by 16-bit dynamic RAMs,

Contextual Info: bE4Tfl2S 0D23b4Q 4^5 M 5 M •■ M I T I MITSUBISHI LSIs 4 4 2 7 0 A J , T P , R T - 7 , - 8 , - 7 S , - 8 S FAST PAGE MODE 4194304-BIT 262144-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 2 6 2 1 4 4 -w o rd by 1 6 -b it dynamic RAMS, PIN CONFIGURATION (TOP VIEW)

Contextual Info: MITSUBISHI LSIs P f f iM t m m ñ W f '* M 5 M 5 6 4 R 1 6 C J ,T P -1 0 ,-1 2 ,-1 5 Notice: T h is is not a fin al specification. S om e p aram e tric lim its are su bje ct to ch an ge -| 048576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW)

Contextual Info: Datasheet R1RW0416DI Series Wide Temperature Range Version 4M High Speed SRAM 256-kword x 16-bit REJ03C0109-0201 Rev.2.01 Jun 16, 2010 Description The R1RW0416DI is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access